BF959 VHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current – Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C –55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg COLLECTOR 1 3 BASE 2 EMITTER 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W 3 TO–92 CASE 29 STYLE 21 MARKING DIAGRAM BF 959 YWW Y W = Year = Work Week ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 2 1 Package Shipping BF959 TO–92 5000 Units/Box BF959ZL1 TO–92 2000/Ammo Pack BF959RL1 TO–92 2000 Units/Box Publication Order Number: BF959/D BF959 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 – – Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 30 – – Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 3.0 – – Vdc ICBO – – 100 nAdc 35 40 – – – – OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) – – 1.0 Vdc Base–Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) – – 1.0 Vdc 700 600 – – – – Cre – 0.65 – pF Nf – 3.0 – dB SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) http://onsemi.com 2 MHz BF959 500 1000 200 200 100 100 mV hFE , DC CURRENT GAIN 500 50 40 30 50 40 30 20 20 1 2 3 4 5 10 20 30 50 10 100 1.6 1.6 1.4 1.4 1.2 1 0.8 2V 0.6 3 4 5 10 20 10 V 5V 20 30 40 50 1.2 0.8 100 Cre 1 2 3 4 5 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current–Gain – Bandwidth Product Figure 4. Capacitances b22e 300 200 Y22e ( µs) VCE = 10 V 2 50 Cob IC, COLLECTOR CURRENT (mA) g11e 50 0.6 0.2 100 30 Cib 1 500 5 4 3 Y11e (ms) 10 0.4 10 b11e 1 0.5 0.4 0.3 g22e VCE = 10 V 100 50 40 30 20 0.2 0.1 4 5 Figure 2. VCE(sat) at IC/IB = 10 1.8 2 3 Figure 1. hFE at 10 V 1.8 1 2 IC, COLLECTOR CURRENT (mA) 2.0 0.4 1 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (GHz) 10 1 2 3 4 5 10 20 30 50 10 100 1 2 3 4 5 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz http://onsemi.com 3 50 BF959 PACKAGE DIMENSIONS TO–92 TO–226AA CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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