Product Overview EMD4DXV6: Complementary Bipolar Digital Transistor (BRT) For complete documentation, see the data sheet Product Description The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base?emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series, two complementary devices are housed in the SOT?563 package, which is ideal for low power surface mount applications where board space is at a premium. Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel These are Pb-Free Devices Part Electrical Specifications Product Compliance Status Polarity IC Continuo us (A) V(BR)CEO Min (V) hFE Min R1 (kΩ) R2 (kΩ) R1/R2 Typ Vi(off) Max Vi(on) Min (V) (V) Package Type EMD4DXV6T1G AEC Qualified Active Comple mentary 0.1 50 80 10 47 0.21 - - SOT-563 Active Comple mentary 0.1 50 80 10 47 0.21 - - SOT-563 Active Comple mentary 0.1 50 80 10 47 0.21 - - SOT-563 Pb-free Halide free EMD4DXV6T5G AEC Qualified Pb-free Halide free NSVEMD4DXV6T5G AEC Qualified PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016