FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B Generic Copy Issue Date: 07-Apr-2015 TITLE: Qualification of Niigata Fab (Japan) as the additional wafer source for Small Signal General Purpose Transistors and Bias Resistor Transistors. PROPOSED FIRST SHIP DATE: 07-Jul-2015 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Farrah Omar <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: This is the Final Notification by ON Semiconductor notifying customers of its plan to add Niigata Fab (Japan) as the qualified wafer source for Small Signal General Purpose Transistors and Bias Resistor Transistors. The Niigata Fab facility is an ON Semiconductor owned wafer fab that has been producing products for ON Semiconductor. Several existing technologies within ON Semiconductor’s product families are currently sourced from Niigata Fab. ON Semiconductor Niigata Wafer Fab is an internal factory that is TS16949, ISO-9001 and ISO-14000 certified. Qualification tests are designed to show that the reliability of the transferred devices will continue to meet or exceed ON Semiconductor standards. This FPCN20349B is to clarify that 9 devices from Bias Resistor Transistors were unintentionally omitted from the Generic PCN document. Issue Date: 07-Apr-2015 Rev. 06-Jan-2010 Page 1 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B RELIABILITY DATA SUMMARY: Small Signal General Purpose Transistor Package: SOT23 BCX19LT1G (NPN) Test: HTRB Autoclave+PC HAST+PC IOL+PC TC+PC HTSL RSH DPA DPA Conditions: Ta=150C,80% Rated Voltage Ta=121C RH=100% ~15 psig Ta=130C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. Ta= -65 C to 150 C Ta = 150C Ta=260C, 10 sec dwell per AEC Q101-004 post TC per AEC Q101-004 post HAST Interval: 1008 hrs 96 hrs 96 hrs Results 0/240 0/240 0/240 15000 cyc 0/240 1000 cyc 1008 hrs 0/240 0/240 0/30 0/2 0/2 Interval: 1008 hrs 96 hrs 96 hrs Results 0/240 0/240 0/240 15000 cyc 0/240 1000 cyc 1008 hrs 0/240 0/240 0/30 0/2 0/2 Package: SOT23 MMBT589LT1G (PNP) Test: HTRB UHAST+PC HAST+PC IOL+PC TC+PC HTSL RSH DPA DPA Conditions: Ta=150C,80% Rated Voltage Ta=130C RH=85% Ta=130C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. Ta= -65 C to 150 C Ta = 150C Ta=260C, 10 sec dwell per AEC Q101-004 post TC per AEC Q101-004 post HAST Issue Date: 07-Apr-2015 Rev. 06-Jan-2010 Page 2 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B Bias Resistor Transistor Package: SC70 DTC115EM3T5G (NPN) Test: HTRB Autoclave+PC HAST+PC IOL+PC TC+PC HTSL RSH DPA DPA Conditions: Ta=150C,80% Rated Voltage Ta=121C RH=100% ~15 psig Ta=130C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. Ta= -65 C to 150 C Ta = 150C Ta=260C, 10 sec dwell per AEC Q101-004 post TC per AEC Q101-004 post HAST Interval: 1008 hrs 96 hrs 96 hrs Results 0/80 0/80 0/80 15000 cyc 0/80 1000 cyc 1008 hrs 0/80 0/80 0/30 0/2 0/2 Conditions: Ta=150C,80% Rated Voltage Ta=121C RH=100% ~15 psig Ta=130C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. Ta= -65 C to 150 C Ta = 150C Ta=260C, 10 sec dwell per AEC Q101-004 post TC per AEC Q101-004 post HAST Interval: 1008 hrs 96 hrs 96 hrs Conditions: Ta=150C,80% Rated Voltage Ta=121C RH=100% ~15 psig Ta=130C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. Ta= -65 C to 150 C Ta = 150C Ta=260C, 10 sec dwell per AEC Q101-004 post TC per AEC Q101-004 post HAST Interval: 1008 hrs 96 hrs 96 hrs Results 0/80 0/80 0/80 15000 cyc 0/80 1000 cyc 1008 hrs 0/80 0/80 0/30 0/2 0/2 Package: SC75 DTA114EYT1G (PNP) Test: HTRB Autoclave+PC HAST+PC IOL+PC TC+PC HTSL RSH DPA DPA Result 0/80 0/80 0/80 15000 cyc 0/80 1000 cyc 1008 hrs 0/80 0/80 0/30 0/2 0/2 Package: SC70 MUN5230T1G (NPN) Test: HTRB Autoclave+PC HAST+PC IOL+PC TC+PC HTSL RSH DPA DPA Issue Date: 07-Apr-2015 Rev. 06-Jan-2010 Page 3 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B Package: SOT23 SMMUN2214LT1G (NPN) Test: HTRB Autoclave+PC HAST+PC IOL+PC TC+PC HTSL DPA DPA Conditions: Ta=150C,80% Rated Voltage Ta=121C RH=100% ~15 psig Ta=130C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. Ta= -65 C to 150 C Ta = 150C per AEC Q101-004 post TC per AEC Q101-004 post HAST Interval: 1008 hrs 96 hrs 96 hrs Results 0/240 0/240 0/240 15000 cyc 0/240 1000 cyc 1008 hrs 0/240 0/240 0/2 0/2 ELECTRICAL CHARACTERISTIC SUMMARY: There are no changes in electrical characteristics and product performance meets data sheet specifications. Characterization data is available upon request. CHANGED PART IDENTIFICATION: Affected products from ON Semiconductor with date code 1527 representing WW27, 2015 and greater may be sourced from either the Niigata Fab (Japan) or the ISMF Fab (Malaysia). List of affected General Parts: Bias Resistor Transistors NSBC114EDXV6T5G NSBC114YDXV6T5G NSBC123JDXV6T5G EMC3DXV5T5G NSBC124EDXV6T5G NSBA144EDXV6T5G NSBC144EDXV6T5G EMD4DXV6T5G NSBC143TDXV6T5G Issue Date: 07-Apr-2015 Rev. 06-Jan-2010 Page 4 of 4