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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B
Generic Copy
Issue Date: 07-Apr-2015
TITLE: Qualification of Niigata Fab (Japan) as the additional wafer source for Small Signal
General Purpose Transistors and Bias Resistor Transistors.
PROPOSED FIRST SHIP DATE: 07-Jul-2015
AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or Farrah Omar <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers.
implementation of the change.
FPCNs are issued at least 90 days prior to
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
DESCRIPTION AND PURPOSE:
This is the Final Notification by ON Semiconductor notifying customers of its plan to add Niigata Fab
(Japan) as the qualified wafer source for Small Signal General Purpose Transistors and Bias
Resistor Transistors.
The Niigata Fab facility is an ON Semiconductor owned wafer fab that has been producing products
for ON Semiconductor. Several existing technologies within ON Semiconductor’s product families
are currently sourced from Niigata Fab. ON Semiconductor Niigata Wafer Fab is an internal factory
that is TS16949, ISO-9001 and ISO-14000 certified.
Qualification tests are designed to show that the reliability of the transferred devices will continue to
meet or exceed ON Semiconductor standards.
This FPCN20349B is to clarify that 9 devices from Bias Resistor Transistors were unintentionally
omitted from the Generic PCN document.
Issue Date: 07-Apr-2015
Rev. 06-Jan-2010
Page 1 of 4
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B
RELIABILITY DATA SUMMARY:
Small Signal General Purpose Transistor
Package: SOT23
BCX19LT1G (NPN)
Test:
HTRB
Autoclave+PC
HAST+PC
IOL+PC
TC+PC
HTSL
RSH
DPA
DPA
Conditions:
Ta=150C,80% Rated Voltage
Ta=121C RH=100% ~15 psig
Ta=130C RH=85%
bias=80% rated V or100V Max
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta= -65 C to 150 C
Ta = 150C
Ta=260C, 10 sec dwell
per AEC Q101-004 post TC
per AEC Q101-004 post HAST
Interval:
1008 hrs
96 hrs
96 hrs
Results
0/240
0/240
0/240
15000 cyc
0/240
1000 cyc
1008 hrs
0/240
0/240
0/30
0/2
0/2
Interval:
1008 hrs
96 hrs
96 hrs
Results
0/240
0/240
0/240
15000 cyc
0/240
1000 cyc
1008 hrs
0/240
0/240
0/30
0/2
0/2
Package: SOT23
MMBT589LT1G (PNP)
Test:
HTRB
UHAST+PC
HAST+PC
IOL+PC
TC+PC
HTSL
RSH
DPA
DPA
Conditions:
Ta=150C,80% Rated Voltage
Ta=130C RH=85%
Ta=130C RH=85%
bias=80% rated V or100V Max
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta= -65 C to 150 C
Ta = 150C
Ta=260C, 10 sec dwell
per AEC Q101-004 post TC
per AEC Q101-004 post HAST
Issue Date: 07-Apr-2015
Rev. 06-Jan-2010
Page 2 of 4
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B
Bias Resistor Transistor
Package: SC70
DTC115EM3T5G (NPN)
Test:
HTRB
Autoclave+PC
HAST+PC
IOL+PC
TC+PC
HTSL
RSH
DPA
DPA
Conditions:
Ta=150C,80% Rated Voltage
Ta=121C RH=100% ~15 psig
Ta=130C RH=85%
bias=80% rated V or100V Max
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta= -65 C to 150 C
Ta = 150C
Ta=260C, 10 sec dwell
per AEC Q101-004 post TC
per AEC Q101-004 post HAST
Interval:
1008 hrs
96 hrs
96 hrs
Results
0/80
0/80
0/80
15000 cyc
0/80
1000 cyc
1008 hrs
0/80
0/80
0/30
0/2
0/2
Conditions:
Ta=150C,80% Rated Voltage
Ta=121C RH=100% ~15 psig
Ta=130C RH=85%
bias=80% rated V or100V Max
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta= -65 C to 150 C
Ta = 150C
Ta=260C, 10 sec dwell
per AEC Q101-004 post TC
per AEC Q101-004 post HAST
Interval:
1008 hrs
96 hrs
96 hrs
Conditions:
Ta=150C,80% Rated Voltage
Ta=121C RH=100% ~15 psig
Ta=130C RH=85%
bias=80% rated V or100V Max
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta= -65 C to 150 C
Ta = 150C
Ta=260C, 10 sec dwell
per AEC Q101-004 post TC
per AEC Q101-004 post HAST
Interval:
1008 hrs
96 hrs
96 hrs
Results
0/80
0/80
0/80
15000 cyc
0/80
1000 cyc
1008 hrs
0/80
0/80
0/30
0/2
0/2
Package: SC75
DTA114EYT1G (PNP)
Test:
HTRB
Autoclave+PC
HAST+PC
IOL+PC
TC+PC
HTSL
RSH
DPA
DPA
Result
0/80
0/80
0/80
15000 cyc
0/80
1000 cyc
1008 hrs
0/80
0/80
0/30
0/2
0/2
Package: SC70
MUN5230T1G (NPN)
Test:
HTRB
Autoclave+PC
HAST+PC
IOL+PC
TC+PC
HTSL
RSH
DPA
DPA
Issue Date: 07-Apr-2015
Rev. 06-Jan-2010
Page 3 of 4
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349B
Package: SOT23
SMMUN2214LT1G (NPN)
Test:
HTRB
Autoclave+PC
HAST+PC
IOL+PC
TC+PC
HTSL
DPA
DPA
Conditions:
Ta=150C,80% Rated Voltage
Ta=121C RH=100% ~15 psig
Ta=130C RH=85%
bias=80% rated V or100V Max
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta= -65 C to 150 C
Ta = 150C
per AEC Q101-004 post TC
per AEC Q101-004 post HAST
Interval:
1008 hrs
96 hrs
96 hrs
Results
0/240
0/240
0/240
15000 cyc
0/240
1000 cyc
1008 hrs
0/240
0/240
0/2
0/2
ELECTRICAL CHARACTERISTIC SUMMARY:
There are no changes in electrical characteristics and product performance meets data sheet
specifications. Characterization data is available upon request.
CHANGED PART IDENTIFICATION:
Affected products from ON Semiconductor with date code 1527 representing WW27, 2015 and
greater may be sourced from either the Niigata Fab (Japan) or the ISMF Fab (Malaysia).
List of affected General Parts:
Bias Resistor Transistors
NSBC114EDXV6T5G
NSBC114YDXV6T5G
NSBC123JDXV6T5G
EMC3DXV5T5G
NSBC124EDXV6T5G
NSBA144EDXV6T5G
NSBC144EDXV6T5G
EMD4DXV6T5G
NSBC143TDXV6T5G
Issue Date: 07-Apr-2015
Rev. 06-Jan-2010
Page 4 of 4