Product Overview NGTG35N65FL2: IGBT 650V 35A FS2 Solar/UPS For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage. Features • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 5µs Short-Circuit Capability Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode NGTG35N65FL2WG Pb-free Active 650 1.7 0.28 0.84 68 7 125 5 300 No 35 2.2 Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO247