NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 35 A, 650 V VCEsat = 1.70 V EOFF = 0.28 mJ C Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC A 70 35 Pulsed collector current, Tpulse limited by TJmax ICM 120 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C G C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM W 300 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G35N65FL2 AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 0 1 Device Package Shipping NGTG35N65FL2WG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTG35N65FL2W/D NGTG35N65FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 35 A VGE = 15 V, IC = 35 A, TJ = 175°C VCEsat 1.50 − 1.70 2.20 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − − 0.5 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 3115 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 149 − Cres − 88 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 35 A, VGE = 15 V Gate to collector charge Qg − 125 − Qge − 30 − Qgc − 63 − td(on) − 72 − tr − 40 − td(off) − 132 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 35 A Rg = 10 W VGE = 0 V/ 15 V* tf − 75 − Eon − 0.84 − Eoff − 0.28 − Total switching loss Ets − 1.12 − Turn−on delay time td(on) − 70 − tr − 38 − td(off) − 135 − tf − 96 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 35 A Rg = 10 W VGE = 0 V/ 15 V* Eon − 1.05 − Turn−off switching loss Eoff − 0.50 − Total switching loss Ets − 1.55 − ns mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTG35N65FL2WG. http://onsemi.com 2 NGTG35N65FL2WG TYPICAL CHARACTERISTICS 140 140 VGE = 20 to 15 V 13 V 100 80 60 11 V 40 10 V 7V 20 0 1 2 3 4 9V 8V 6 5 15 V VGE = 20 to 17 V 100 13 V 80 60 11 V 40 10 V 9V 8V 7V 20 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 140 TJ = −55°C VGE = 20 to 15 V 120 13 V 100 80 60 11 V 40 10 V 20 0 TJ = 150°C 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 140 IC, COLLECTOR CURRENT (A) 7 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 120 7V 9V 8V 0 1 2 3 4 5 6 120 TJ = 25°C 100 80 TJ = 150°C 60 40 20 0 7 0 8 2 4 6 8 10 12 14 16 18 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.75 3.50 3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 −75 −50 −25 10,000 IC = 70 A Cies C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) TJ = 25°C IC = 35 A IC = 15 A IC = 5 A 1000 Coes 100 Cres TJ = 25°C 10 0 25 50 75 0 100 125 150 175 200 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTG35N65FL2WG TYPICAL CHARACTERISTICS VGE, GATE−EMITTER VOLTAGE (V) 20 18 16 14 12 10 8 6 4 VCE = 480 V VGE = 15 V IC = 35 A 2 0 0 40 20 60 80 120 100 140 QG, GATE CHARGE (nC) Figure 7. Typical Gate Charge 1.75 1000 SWITCHING LOSS (mJ) 1.5 1.25 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V IC = 35 A Rg = 10 W Eon 1 0.75 Eoff 0.5 VCE = 400 V VGE = 15 V IC = 35 A Rg = 10 W td(off) tf 100 td(on) tr 0.25 0 0 20 40 60 80 100 120 140 10 160 0 20 Figure 8. Switching Loss vs. Temperature SWITCHING TIME (ns) SWITCHING LOSS (mJ) 100 120 140 160 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W Eon 2 1.5 Eoff 1 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W td(off) tf 100 td(on) tr 0.5 0 15 80 Figure 9. Switching Time vs. Temperature 3.5 2.5 60 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 3 40 20 25 30 35 40 45 50 55 60 10 15 65 70 75 20 25 30 35 40 45 50 55 60 65 70 75 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Switching Loss vs. IC Figure 11. Switching Time vs. IC http://onsemi.com 4 NGTG35N65FL2WG TYPICAL CHARACTERISTICS 10000 VCE = 400 V VGE = 15 V TJ = 150°C IC = 35 A SWITCHING LOSS (mJ) 3.5 3 SWITCHING TIME (ns) 4 Eon 2.5 2 1.5 Eoff 1 1000 td(off) tf td(on) 100 VCE = 400 V VGE = 15 V TJ = 150°C IC = 35 A tr 0.5 0 10 5 15 25 35 45 55 75 65 5 45 55 65 75 Figure 13. Switching Time vs. Rg 85 1000 IC = 35 A VGE = 15 V TJ = 150°C Rg = 10 W Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.4 35 Figure 12. Switching Loss vs. Rg IC = 35 A VGE = 15 V TJ = 150°C Rg = 10 W 1.6 25 Rg, GATE RESISTOR (W) 2 1.8 15 Rg, GATE RESISTOR (W) 1.2 1 Eoff 0.8 0.6 0.4 td(off) 100 tf td(on) tr 0.2 10 175 0 150 200 250 300 350 400 450 500 550 600 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Switching Loss vs. VCE Figure 15. Switching Time vs. VCE 575 1000 1000 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 225 100 ms 100 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 100 1000 VGE = 15 V, TC = 125°C 100 10 1 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Safe Operating Area Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTG35N65FL2WG TYPICAL CHARACTERISTICS 1 50% Duty Cycle R(t) (°C/W) 0.1 RqJC = 0.50 20% 10% 5% 0.01 Junction R1 2% R2 Rn C2 Cn Ci = ti/Ri 0.001 C1 Single Pulse Case Ri (°C/W) 0.0642 0.0608 0.0507 0.1706 0.1422 0.0094 ti (sec) 0.0016 0.0052 0.0197 0.0185 0.0703 3.3481 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance http://onsemi.com 6 0.1 1 NGTG35N65FL2WG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K W J F 2 PL D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTG35N65FL2W/D