MCP87022 High-Speed N-Channel Power MOSFET Features: Description • Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation • ROHS Compliant The MCP87022 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87022 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low Figure of Merit of the MCP87022 allows high efficiency power conversion with reduced switching and conduction losses. Applications • Point-of-Load DC-DC Converters • High Efficiency Power Management in Servers, Networking and Automotive Applications Package Type PDFN 5 x 6 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Product Summary Table: Unless otherwise indicated, TA = +25˚C Parameters Sym Min Typ Max Units Conditions Drain-to-Source Breakdown Voltage BVDSS 25 — — V VGS = 0V, ID = 250 µA Gate-to-Source Threshold Voltage VGS(TH) 1 1.3 1.6 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 2.2 2.6 mΩ VGS = 4.5V, ID = 25A — 1.9 2.3 mΩ VGS = 10V, ID = 25A Operating Characteristics Total Gate Charge QG — 25.5 29 nC VDS = 12.5V, ID = 25A, VGS = 4.5V Gate-to-Drain Charge QGD — 9 — nC VDS = 12.5V, ID = 25A RG — 1.3 — Ω — Thermal Resistance Junction-to-X RθJX — — 56 ˚C/W Note 1 Thermal Resistance Junction-to-Case RθJC — — 1.6 ˚C/W Note 2 Series Gate Resistance Thermal Characteristics Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper. This characteristic is dependent on user’s board design. RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. 2012 Microchip Technology Inc. DS25133B-page 1 MCP87022 1.0 † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDS .......................................................................+25V VGS ........................................................... +10.0V / -8V ID, Continuous ....................................100A, TC = 25˚C PD ..................................................... 2.2W, TA = +25˚C TJ, TSTG.............................................. -55˚C to +150˚C EAS Avalanche Energy ..................................... 450 mJ ID = 30A, L = 1 mH, RG = 25Ω DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym Min Typ Max Units Conditions BVDSS 25 — — V VGS = 0V, ID = 250 µA IDSS — — 1 µA VGS = 0V, VDS = 20V Gate-to-Source Leakage Current IGSS — — 100 nA VDS = 0V, VGS = 10V/-8V Gate-to-Source Threshold Voltage VGS(TH) 1 1.3 1.6 V VDS = VGS, ID = 250 µA RDS(ON) — 2.2 2.6 m VGS = 4.5V, ID = 25 A — 1.9 2.3 m VGS = 10V, ID = 25 A gfs — 155 — S VDS = 12.5V, ID = 25A Input Capacitance CISS — 2310 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Output Capacitance COSS — 1080 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz CRSS — 285 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Total Gate Charge QG — 25.5 29 nC VDS = 12.5V, ID = 25 A, VGS = 4.5V Gate-to-Drain Charge QGD — 9 — nC VDS = 12.5V, ID = 25 A Gate-to-Source Charge QGS — 4.5 — nC VDS = 12.5V, ID = 25 A Gate Charge at VGS(TH) QG(TH) — 3.3 — nC VDS = 12.5V, ID = 25 A Output Charge QOSS — 21 — nC VDS = 12.5V, VGS = 0 Turn-On Delay Time td(on) — 7.6 — ns VDS = 12.5V, VGS = 4.5V, ID = 25A, RG = 2 tr — 27 — ns VDS = 12.5V, VGS = 4.5V, ID = 25A, RG = 2 td(off) — 21 — ns VDS = 12.5V, VGS = 4.5V, ID = 25A, RG = 2 tf — 17 — ns VDS = 12.5V, VGS = 4.5V, ID = 25A, RG = 2 RG — 1.3 — Static Characteristics Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current Drain-to-Source On Resistance Transconductance Dynamic Characteristics Reverse Transfer Capacitance Rise Time Turn-Off Delay Time Fall Time Series Gate Resistance DS25133B-page 2 2012 Microchip Technology Inc. MCP87022 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym Min Typ Max Units Conditions Diode Forward Voltage VFD — 0.8 1 V Reverse Recovery Charge QRR — 39 — nC IS = 25A, di/dt = 300 A/µs trr — 22 — ns IS = 25A, di/dt = 300 A/µs EAS 200 — — mJ ID = 20A, L = 1 mH, RG = 25 Sym Min Typ Max Units Operating Junction Temperature Range TJ -55 — 150 °C Storage Temperature Range TA -55 — 150 °C Thermal Resistance Junction-to-X, 8L 5x6-PDFN RθJX — — 56 °C/W Note 1 Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC — — 1.6 °C/W Note 2 Diode Characteristics Reverse Recovery Time IS = 25A, VGS = 0V Avalanche Characteristics Avalanche Energy TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Conditions Temperature Ranges Package Thermal Resistances Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper. This characteristic is dependent on user’s board design. RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. 2012 Microchip Technology Inc. DS25133B-page 3 MCP87022 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, TA = +25°C. ID - Drain Current (A) 70 Normalized On-State Resistance 80 VGS = 10V 60 VGS = 4.5V 50 VGS = 3V 40 30 VGS = 2.5V 20 10 0 0.0 0.2 0.4 0.6 VDS - Drain-to-Source Voltage (V) FIGURE 2-1: Characteristics. 80 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) ID - Drain Current (A) 60 50 40 TC = +25°C TC = +125°C 20 TC = -55°C 0 1.25 1.5 1.75 2 2.25 1.2 1 0.8 0.6 0.4 2.5 2.75 10 Normalized On Resistance 8 VDS = 5V 7 VDS = 12.5V 6 5 4 3 2 1 0 3 0 5 10 15 20 25 30 35 40 45 50 55 QG - Gate Charge (nC) Typical Transfer FIGURE 2-5: Gate Charge. Gate-to-Source Voltage vs. 4.5 10 ID = 25A 9 f = 1 MHz VGS = 0V 4 C - Capacitance (nF) RDS(ON) - On-State Resistance (mΩ) 20 40 60 80 100 120 140 160 ID = 25A 9 VGS - Gate-to-Source Voltage (V) FIGURE 2-2: Characteristics. 0 FIGURE 2-4: vs. Temperature. VDS = 5V 1 1.4 TC - Case Temperature (°C) 70 10 ID = 25A VGS = 4.5V 1.6 -60 -40 -20 0.8 Typical Output 30 1.8 8 7 6 5 4 TC = +125°C 3 2 TC = +25°C 1 3.5 3 CISS 2.5 2 1.5 COSS 1 0.5 0 CRSS 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) FIGURE 2-3: Source Voltage. DS25133B-page 4 10 On Resistance vs. Gate-to- 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) FIGURE 2-6: Source Voltage. Capacitance vs. Drain-to- 2012 Microchip Technology Inc. MCP87022 1.7 120 ID = 250 µA 100 ID - Drain Current (A) VGS(TH) - Gate-to-Source Threshold Voltage (V) Note: Unless otherwise indicated, TA = +25°C. 1.5 1.3 1.1 0.9 VGS = 10V 80 VGS = 4.5V 60 40 20 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 25 50 TC - Case Temperature (°C) FIGURE 2-10: Temperature. 100 125 150 Maximum Drain Current vs. 100 ZJA - Normalized Thermal Impedance ISD - Source-to-Drain Current (A) ISD - Source-to-Drain Current (A) FIGURE 2-7: Gate-to-Source Threshold Voltage vs. Temperature. 10 1 TC = +25°C TC = +125°C 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1 0.1 DC = 0.5 DC = 0.3 DC = 0.1 DC = 0.05 DC = 0.02 DC = 0.01 Single Pulse 0.01 0.001 0.001 1.0 0.1 10 t1 - Pulse Duration (s) VSD - Source-to-Drain Voltage (V) FIGURE 2-8: Source-to-Drain Current vs. Source-to-Drain Voltage. FIGURE 2-11: Impedance. 1000 1 ms 10 ms 100 ms 1 1s 0.1 DC RθJA = 56 °C/W Single Pulse 0.01 0.01 FIGURE 2-9: Area. 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Maximum Safe Operating 2012 Microchip Technology Inc. IAS - Avalanche Current (A) 100 10 1000 Transient Thermal 100 Operation in this range is limited by RDS(on) ID - Drain Current (A) 75 TC - Case Temperature (˚C) TC = +150°C 10 1 0.01 0.1 1 TC = +25°C 10 100 tAV - Avalanche Time (ms) FIGURE 2-12: Single-Pulse Unclamped Inductive Switching. DS25133B-page 5 MCP87022 BR(DSS) VBR(DSS) - Breakdown Voltage (V)(V) V - Breakdown Voltage Note: Unless otherwise indicated, TA = +25°C. 30 ID = 250 µA 29 28 27 26 25 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature(°C) FIGURE 2-13: Drain-to-Source Breakdown Voltage vs. Temperature. DS25133B-page 6 2012 Microchip Technology Inc. MCP87022 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP87022 5x6 PDFN Symbol Description 1, 2, 3 S Source pin 4 G Gate pin 5, 6, 7, 8 D Drain pin, including exposed thermal pad 2012 Microchip Technology Inc. DS25133B-page 7 MCP87022 4.0 PACKAGING INFORMATION 4.1 Package Marking Information* 8-Lead PDFN (5x6x1.0 mm) NNN PIN 1 Example 87022 U/MF e ^^3 1219 256 PIN 1 *RoHS compliant using EU-RoHS exemption: 7(a) - Lead in high-melting-temperature-type solders (i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer packaging for this package. Legend: XX...X Y YY WW NNN e3 * Note: DS25133B-page 8 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2012 Microchip Technology Inc. MCP87022 2012 Microchip Technology Inc. DS25133B-page 9 MCP87022 DS25133B-page 10 2012 Microchip Technology Inc. MCP87022 2012 Microchip Technology Inc. DS25133B-page 11 MCP87022 NOTES: DS25133B-page 12 2012 Microchip Technology Inc. MCP87022 APPENDIX A: REVISION HISTORY Revision B (November 2012) • Updated the section “Absolute Maximum Ratings †” in the “Electrical Characteristics” section. Revision A (September 2012) • Original Release of this Document. 2012 Microchip Technology Inc. DS25133B-page 13 MCP87022 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: MCP87022T: Temperature Range: U Package: Examples: a) MCP87022T-U/MF: Tape and Reel, Ultra High Temperature, 8LD PDFN package N-Channel Power MOSFET (Tape and Reel) = -55°C to +150°C (Ultra High) MF = 8-Lead High Power Dual Flatpack, No Lead Package (5x6x1.0 mm Body) (PDFN), 8-lead 2012 Microchip Technology Inc. DS25133B-page 14 Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62076-664-4 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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