INFINEON Q62705-K405

Uni- and Bipolar Hall IC Switches for
Magnetic Field Applications
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Bipolar IC
Features
•
•
•
•
•
•
Temperature compensated magnetic performance
Digital output signal
For unipolar and alternating magnetic fields
Large temperature range
Protection against reversed polarity
Output protection against electrical disturbances
SOT-89
Type
Ordering Code
Package
▼ TLE 4905 G
Q62705-K402
SOT-89
▼ TLE 4935 G
Q62705-K404
SOT-89
▼ TLE 4935-2 G
Q62705-K405
SOT-89
▼ TLE 4945-2 G
Q62705-K403
SOT-89
▼ New type
TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed
specifically for automotive and industrial applications. Reverse polarity protection is
included on-chip as is output protection against negative voltage transients.
Typical applications are position/proximity indicators, brushless DC motor commutation,
rotational indexing etc.
Semiconductor Group
1
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Pin Configuration
(top view)
Center of
sensitive area
1±0.2
2.25 ±0.2
1
2
3
AEP02150
Figure 1
Pin Definitions and Funtions
Pin No.
Symbol
Function
1
VS
Supply voltage
2
GND
Ground
3
Q
Output
Semiconductor Group
2
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Circuit Description
The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The
internal reference provides the supply voltage for the components. A magnetic field
perpendicular to the chip surface induces a voltage at the hall probe. This voltage is
amplified and switches a Schmitt-trigger with open-collector output. A protection diode
against reverse power supply is integrated.
The output is protected against electrical disturbances.
Threshold
Generator
VS
1
3
Q
HallGenerator
VS
VRef
Amplifier
Output
Stage
2
AEB01243
GND
Figure 2
SchmittTrigger
Block Diagram
Semiconductor Group
3
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Functional Description Unipolar Type TLE 4905 (figure 3 and 4)
When a positive magnetic field is applied in the indicated direction (figure 3) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). When the magnetic field is reduced to a value smaller than the release
point, the output of the IC turns off (Release Point; figure 4).
+
Branded Side
Ι
S
VQ
N
+
Figure 3
VS
-
AES01231
Sensor/Magnetic-Field Configuration
B
BOP
Induction
BRP
0
t
VQ
VQH
Output Voltage
VQL
t
AED01420
Figure 4
Switching Characteristics Unipolar Type
Semiconductor Group
4
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6)
When a positive magnetic field is applied in the indicated direction (figure 5) and the
turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct
(Operate Point). The output state does not change unless a reverse magnetic field
exceeding the turn-off magnetic induction |BRP| is exceeded. In this case the output will
turn off (Release Point; figure 6).
+
Branded Side
Ι
S
VQ
N
+
Figure 5
VS
-
AES01231
Sensor/Magnetic-Field Configuration
B
BOP
0
t
Induction
BRP
VQ
VQH
Output Voltage
VQL
t
AED01421
Figure 6
Switching Characteristics Bipolar Type
Semiconductor Group
5
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Absolute Maximum Ratings
Tj = – 40 to 125 °C
Parameter
Supply voltage
Supply voltage
Output voltage
Output current
Output reverse current
Junction temperature
Storage temperature
Thermal resistance
Symbol
VS
VS
VQ
IQ
– IQ
Tj
Tstg
Rth JA
Limit Values Unit Remarks
min.
max.
– 40
32
V
–
–
40
V
t < 400 ms; ν = 0.1
–
32
V
–
–
100
mA
–
–
100
mA
–
– 40
125
°C
–
– 50
150
°C
–
100
K/W –
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Operating Range
Parameter
Supply voltage
Junction temperature
Symbol
VS
Tj
Limit Values Unit Remarks
min.
max.
4.0
18
V
–
– 40
125
°C
–
Note: In the operating range the functions given in the circuit description are fulfilled.
Semiconductor Group
6
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
AC/DC Characteristics
4.0 V ≤ VS ≤ 18 V; – 40 °C ≤ Tj ≤ 125 °C
Parameter
Supply current
Symbol
ISHigh
ISLow
Limit Values
min.
typ.
max.
–
–
2.5
3.5
7
8
Unit Test Condition
mA
mA
B < BRP
B > BOP
Test
Circuit
1
1
IQ = 40 mA
Output saturation
voltage
VQSat
–
0.25
0.5
V
IQ = 40 mA
1
Output leakage
current
IQL
–
–
10
µA
VQ = 18 V
1
Rise/fall time
tr / tf
–
–
1
µs
RL = 1.2 kΩ
CL ≤ 33 pF
1
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and
the given supply voltage.
Note: Moderate changes may occur during the development process or customer
discussion.
Semiconductor Group
7
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Magnetic Characteristics
4.0 V ≤ VS ≤ 18 V
Parameter
Symbol
Limit Values
TLE 4905
unipolar
min.
Unit
TLE 4935
TLE 4935-2
bipolar latch bipolar latch
TLE 4945-2
bipolar
switch
max.
min.
max.
min.
max.
min.
max.
Junction Temperature Tj = – 40 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
7.5
19
10
20
15
27
–3
6
mT
BRP
5.5
17
– 20
– 10
– 27
– 15
–6
3
mT
∆BHY
2
6.5
20
40
30
54
1
5
mT
Junction Temperature Tj = 25 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
7
18
10
20
14
26
–3
6
mT
BRP
5
16
– 20
– 10
– 26
– 14
–6
3
mT
∆BHY
2
6
20
40
28
52
1
5
mT
Junction Temperature Tj = 85 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
6.5
17.5
10
20
13
26
–3
6
mT
BRP
4.5
15
– 20
– 10
– 26
– 13
–6
3
mT
∆BHY
2
5.5
20
40
26
52
1
5
mT
Junction Temperature Tj = 125 °C
Turn-ON
induction
Turn-OFF
induction
Hysteresis
(BOP-BRP)
BOP
6
17
10
20
12
25
–3
6
mT
BRP
4
14
– 20
– 10
– 25
– 12
–6
3
mT
∆BHY
2
5
20
40
24
50
1
5
mT
Note: The listed characteristics are ensured over the operating range of the integrated circuit.
Typical characteristics specify mean values expected over the production spread. If not
otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage.
Semiconductor Group
8
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
VS
ΙS
1
+
VS
4.7 nF
-
2
RL
GND
TLE
4905/35/35-2/45-2
CL
3
ΙQ
Q
AES01244
Unipolar Type TLE 4905
Bipolar Type TLE 4935
VQ
VQ
VQH
VQH
VQL
VQL
0
B RP
B OP
B
B RP
B HY
0
B HY
B OP
B
AED01422
VQ
VQH
0.9 VQH
0.1VQH
t
tr
Figure 7
tf
AED01246
Test Circuit 1
Semiconductor Group
9
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Mainframe
Line
Sensor
1
VS
VS
4.7 nF
2
1.2 k Ω
GND
TLE
4905/35/35-2/45-2
4.7 nF
3
Signal
Q
AES01247
Figure 8
Application Circuit
Semiconductor Group
10
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
If not otherwise specified, all curves reflect typical values at Tj = 25 °C and VS = 12 V.
Quiescent Current Difference
versus Temperature
Saturation Voltage versus
Output Current
AED01459
1.0
∆Ι S
VQ
mA
∆ Ι S = Ι SLow - Ι SHigh
0.75
AED01461
1.2
V
4.0 V <_ VS <_ 18 V
1.0
Ι Q = 40 mA
0.8
0.5
0.6
T j = 125 ˚C
0.4
0.25
T j = -40 ˚C
0.2
0
-40
0
50
100
0
150 ˚C 200
0
20
40
60
ΙQ
Quiescent Current versus
Junction Temperature
ΙS
TLE 4905 Operate-and Release-Point
versus Junction Temperature
AED01249
8
100
mA
Tj
AED01424
25
4.0 V <_ VS <_ 18 V
B mT
mA
VQ = High
20
6
B OPmax
15
B RPmax
4
B OPtyp
VS = 18 V
10
B RPtyp
VS = 4.0 V
2
B OPmin
5
B RPmin
0
-50
0
50
100
0
-40
200
C
50
100
200
˚C
Tj
Tj
Semiconductor Group
0
11
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
TLE 4935 Operate-and Release-Point
versus Junction Temperature
TLE 4935-2 Operate-and Release-Point
versus Junction Temperature
AED01423
30
B
4.0 V <_ VS <_ 18 V
mT
B
4.0 V <_ VS <_ 18 V
mT
B OPmax
20
B OPmax
20
AED01640
30
B OPtyp
B OPtyp
B OPmin
10
B OPmin
10
0
0
-10
B RPmax
B RPmax
-10
B RPtyp
-20
B RPtyp
-20
-40
0
50
100
B RPmin
B RPmin
200
˚C
-30
-40
0
50
100
Tj
Tj
TLE 4905 Hysteresis versus Junction
Temperature
TLE 4945-2 Operate-and Release-Point
versus Junction Temperature
AED01426
8
B
AED02353
18
4.0 V <_ VS <_ 18 V
mT
200
˚C
B
4.0 V <_ VS <_ 18 V
mT
12
6
B OPmax
6
B HYmax
B RPmax
B OPtyp
0
4
B RPtyp
B OPmin
B HYtyp
-6
2
B RPmin
B HYmin
-12
0
-40
0
50
100
-18
-40
200
˚C
50
100
200
˚C
Tj
Tj
Semiconductor Group
0
12
1998-04-29
TLE 4905 G; TLE 4935 G
TLE 4935-2 G; TLE 4945-2 G
Package Outline
SOT-89 (SMD)
(Plastic Small Outline Transistor Package)
1.5
10˚ max
0.2 max 1)
4.25 max
1
2.6 max
0.25
0.65 max
1.5
0.25 min
1.6
2.75 +0.1
-0.15
+0.2
acc. to
DIN 6784
1.0 ±0.2
4.5
45˚
1)
GPS05558
3
Ejector pin marking possible
Package Information
d: Distance chip to upper side of IC
SOT-89: 1.05 mm
d
AEA02487
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Semiconductor Group
13
Dimensions in mm
1998-04-29