Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields Large temperature range Protection against reversed polarity Output protection against electrical disturbances SOT-89 Type Ordering Code Package ▼ TLE 4905 G Q62705-K402 SOT-89 ▼ TLE 4935 G Q62705-K404 SOT-89 ▼ TLE 4935-2 G Q62705-K405 SOT-89 ▼ TLE 4945-2 G Q62705-K403 SOT-89 ▼ New type TLE 4905/35/35-2/45-2 (Unipolar/Bipolar Magnetic Field Switches) have been designed specifically for automotive and industrial applications. Reverse polarity protection is included on-chip as is output protection against negative voltage transients. Typical applications are position/proximity indicators, brushless DC motor commutation, rotational indexing etc. Semiconductor Group 1 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Pin Configuration (top view) Center of sensitive area 1±0.2 2.25 ±0.2 1 2 3 AEP02150 Figure 1 Pin Definitions and Funtions Pin No. Symbol Function 1 VS Supply voltage 2 GND Ground 3 Q Output Semiconductor Group 2 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Circuit Description The circuit includes Hall generator, amplifier and Schmitt-Trigger on one chip. The internal reference provides the supply voltage for the components. A magnetic field perpendicular to the chip surface induces a voltage at the hall probe. This voltage is amplified and switches a Schmitt-trigger with open-collector output. A protection diode against reverse power supply is integrated. The output is protected against electrical disturbances. Threshold Generator VS 1 3 Q HallGenerator VS VRef Amplifier Output Stage 2 AEB01243 GND Figure 2 SchmittTrigger Block Diagram Semiconductor Group 3 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Functional Description Unipolar Type TLE 4905 (figure 3 and 4) When a positive magnetic field is applied in the indicated direction (figure 3) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). When the magnetic field is reduced to a value smaller than the release point, the output of the IC turns off (Release Point; figure 4). + Branded Side Ι S VQ N + Figure 3 VS - AES01231 Sensor/Magnetic-Field Configuration B BOP Induction BRP 0 t VQ VQH Output Voltage VQL t AED01420 Figure 4 Switching Characteristics Unipolar Type Semiconductor Group 4 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Functional Description Bipolar Type TLE 4935/35-2/45-2 (figure 5 and 6) When a positive magnetic field is applied in the indicated direction (figure 5) and the turn-on magnetic induction BOP is exceeded, the output of the Hall-effect IC will conduct (Operate Point). The output state does not change unless a reverse magnetic field exceeding the turn-off magnetic induction |BRP| is exceeded. In this case the output will turn off (Release Point; figure 6). + Branded Side Ι S VQ N + Figure 5 VS - AES01231 Sensor/Magnetic-Field Configuration B BOP 0 t Induction BRP VQ VQH Output Voltage VQL t AED01421 Figure 6 Switching Characteristics Bipolar Type Semiconductor Group 5 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Absolute Maximum Ratings Tj = – 40 to 125 °C Parameter Supply voltage Supply voltage Output voltage Output current Output reverse current Junction temperature Storage temperature Thermal resistance Symbol VS VS VQ IQ – IQ Tj Tstg Rth JA Limit Values Unit Remarks min. max. – 40 32 V – – 40 V t < 400 ms; ν = 0.1 – 32 V – – 100 mA – – 100 mA – – 40 125 °C – – 50 150 °C – 100 K/W – Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Range Parameter Supply voltage Junction temperature Symbol VS Tj Limit Values Unit Remarks min. max. 4.0 18 V – – 40 125 °C – Note: In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 6 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G AC/DC Characteristics 4.0 V ≤ VS ≤ 18 V; – 40 °C ≤ Tj ≤ 125 °C Parameter Supply current Symbol ISHigh ISLow Limit Values min. typ. max. – – 2.5 3.5 7 8 Unit Test Condition mA mA B < BRP B > BOP Test Circuit 1 1 IQ = 40 mA Output saturation voltage VQSat – 0.25 0.5 V IQ = 40 mA 1 Output leakage current IQL – – 10 µA VQ = 18 V 1 Rise/fall time tr / tf – – 1 µs RL = 1.2 kΩ CL ≤ 33 pF 1 Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Note: Moderate changes may occur during the development process or customer discussion. Semiconductor Group 7 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Magnetic Characteristics 4.0 V ≤ VS ≤ 18 V Parameter Symbol Limit Values TLE 4905 unipolar min. Unit TLE 4935 TLE 4935-2 bipolar latch bipolar latch TLE 4945-2 bipolar switch max. min. max. min. max. min. max. Junction Temperature Tj = – 40 °C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 7.5 19 10 20 15 27 –3 6 mT BRP 5.5 17 – 20 – 10 – 27 – 15 –6 3 mT ∆BHY 2 6.5 20 40 30 54 1 5 mT Junction Temperature Tj = 25 °C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 7 18 10 20 14 26 –3 6 mT BRP 5 16 – 20 – 10 – 26 – 14 –6 3 mT ∆BHY 2 6 20 40 28 52 1 5 mT Junction Temperature Tj = 85 °C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 6.5 17.5 10 20 13 26 –3 6 mT BRP 4.5 15 – 20 – 10 – 26 – 13 –6 3 mT ∆BHY 2 5.5 20 40 26 52 1 5 mT Junction Temperature Tj = 125 °C Turn-ON induction Turn-OFF induction Hysteresis (BOP-BRP) BOP 6 17 10 20 12 25 –3 6 mT BRP 4 14 – 20 – 10 – 25 – 12 –6 3 mT ∆BHY 2 5 20 40 24 50 1 5 mT Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at Tj = 25 °C and the given supply voltage. Semiconductor Group 8 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G VS ΙS 1 + VS 4.7 nF - 2 RL GND TLE 4905/35/35-2/45-2 CL 3 ΙQ Q AES01244 Unipolar Type TLE 4905 Bipolar Type TLE 4935 VQ VQ VQH VQH VQL VQL 0 B RP B OP B B RP B HY 0 B HY B OP B AED01422 VQ VQH 0.9 VQH 0.1VQH t tr Figure 7 tf AED01246 Test Circuit 1 Semiconductor Group 9 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Mainframe Line Sensor 1 VS VS 4.7 nF 2 1.2 k Ω GND TLE 4905/35/35-2/45-2 4.7 nF 3 Signal Q AES01247 Figure 8 Application Circuit Semiconductor Group 10 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G If not otherwise specified, all curves reflect typical values at Tj = 25 °C and VS = 12 V. Quiescent Current Difference versus Temperature Saturation Voltage versus Output Current AED01459 1.0 ∆Ι S VQ mA ∆ Ι S = Ι SLow - Ι SHigh 0.75 AED01461 1.2 V 4.0 V <_ VS <_ 18 V 1.0 Ι Q = 40 mA 0.8 0.5 0.6 T j = 125 ˚C 0.4 0.25 T j = -40 ˚C 0.2 0 -40 0 50 100 0 150 ˚C 200 0 20 40 60 ΙQ Quiescent Current versus Junction Temperature ΙS TLE 4905 Operate-and Release-Point versus Junction Temperature AED01249 8 100 mA Tj AED01424 25 4.0 V <_ VS <_ 18 V B mT mA VQ = High 20 6 B OPmax 15 B RPmax 4 B OPtyp VS = 18 V 10 B RPtyp VS = 4.0 V 2 B OPmin 5 B RPmin 0 -50 0 50 100 0 -40 200 C 50 100 200 ˚C Tj Tj Semiconductor Group 0 11 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G TLE 4935 Operate-and Release-Point versus Junction Temperature TLE 4935-2 Operate-and Release-Point versus Junction Temperature AED01423 30 B 4.0 V <_ VS <_ 18 V mT B 4.0 V <_ VS <_ 18 V mT B OPmax 20 B OPmax 20 AED01640 30 B OPtyp B OPtyp B OPmin 10 B OPmin 10 0 0 -10 B RPmax B RPmax -10 B RPtyp -20 B RPtyp -20 -40 0 50 100 B RPmin B RPmin 200 ˚C -30 -40 0 50 100 Tj Tj TLE 4905 Hysteresis versus Junction Temperature TLE 4945-2 Operate-and Release-Point versus Junction Temperature AED01426 8 B AED02353 18 4.0 V <_ VS <_ 18 V mT 200 ˚C B 4.0 V <_ VS <_ 18 V mT 12 6 B OPmax 6 B HYmax B RPmax B OPtyp 0 4 B RPtyp B OPmin B HYtyp -6 2 B RPmin B HYmin -12 0 -40 0 50 100 -18 -40 200 ˚C 50 100 200 ˚C Tj Tj Semiconductor Group 0 12 1998-04-29 TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Package Outline SOT-89 (SMD) (Plastic Small Outline Transistor Package) 1.5 10˚ max 0.2 max 1) 4.25 max 1 2.6 max 0.25 0.65 max 1.5 0.25 min 1.6 2.75 +0.1 -0.15 +0.2 acc. to DIN 6784 1.0 ±0.2 4.5 45˚ 1) GPS05558 3 Ejector pin marking possible Package Information d: Distance chip to upper side of IC SOT-89: 1.05 mm d AEA02487 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 13 Dimensions in mm 1998-04-29