Product Overview BDX53C: Medium Power NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices. Features • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C • Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built-In Base-Emitter Shunt Resistors • TO-220AB Compact Package • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type BDX53CG Pb-free Active NPN 8 100 2 0.75 - - For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-220-3