Transys Electronics L I M I T E D TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 B C E A O 3 J D G M All dimin sions in mm. K L N 1 2 O H F DIM MIN . A B C D E F G H J K L M N O 14.42 9.63 3.56 3 MAX. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 12 mA D.C. current gain IC = 3 A; VCE = 3 V VCBO VCEO IC Ptot Tj 53 54 max. 45 max. 45 max. max. max. VCEsat max. 2.0 hFE min. 750 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 53 54 max. 45 max. 45 max. 53A 53B 54A 54B 60 80 60 80 8.0 60 150 53A 53B 54A 54B 60 80 60 80 5.0 53C 54C 100 100 V V A W °C V 53C 54C 100 100 V V V BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C Collector current Collector current (Peak value) Base current Total power dissipation upto TC=25°C Derate above 25°C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient IC ICM IB Ptot Tj Tstg max. max. max. max. max. max. 2.08 7.0 Rth j–c Rth j–a CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCB = 45 V IB = 0; VCB = 60 V IB = 0; VCB = 80 V IB = 0; VCB = 100 V IB = 0; VCE = 22 V IB = 0; VCE = 30 V IB = 0; VCE = 40 V IB = 0; VCE = 50 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 3 A; IB = 12 mA D.C. current gain IC = 3 A; VCE = 3 V Small signal current gain IC = 3 A; VCE = 4 V; f = 1.0 MHz Output capacitance f = 1.0 MHz NPN IE = 0; VCB = 10 V PNP Parallel-diode forward voltage IF = 3 A IF = 8 A 8.0 12 0.2 60 0.48 150 –65 to +150 53 54 ICBO ICBO ICBO ICBO ICEO ICEO ICEO ICEO max. 0.2 max. – max. – max. – max. 0.5 max. – max. – max. – IEBO max. VCEO(sus)* min. 45 VCBO min. 45 VEBO min. A A A W W/°C °C ºC °C/W °C/W 53A 53B 53C 54A 54B 54C – 0.2 – – – 0.5 – – – – 0.2 – – – 0.5 – – – – 0.2 – – – 0.5 2.0 60 60 5.0 mA mA mA mA mA mA mA mA mA 80 80 100 100 V V V VCEsat* VBEsat* max. max. 2.0 2.5 hFE* min. 750 |h fe| min. 4.0 Co Co max. max. 300 200 pF pF VF VF max. typ. 2.5 2.5 V V * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2% V V