Product Overview BDX33C: 10 A, 100 V NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices. Features • High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C • Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C • Monolithic Construction with Build-In Base-Emitter Shunt resistors • TO-220AB Compact Package • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type BDX33CG Pb-free Active NPN 10 100 2.5 0.75 - - For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-220-3