BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Un it NPN BDX33B BDX33C PNP BDX34B BDX34C V CBO Collector-Base Voltage (IE = 0) 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 80 100 V IC Collector Current ICM Collector Peak Current IB P tot Ts tg Tj Base Current T otal Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature 10 A 15 A 0.25 A 70 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. October 1999 1/4 BDX33B BDX33C BDX34B BDX34C THERMAL DATA R thj -case Thermal Resistance Junction-case o 1.78 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO I CEO IEBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Co nditions for BDX33B/34B for BDX33C/34C T cas e = 100 oC for BDX33B/34B f or BDX33C/34C I C =100 mA VCER(sus) ∗ Collector-emitter Sustaining Voltage (R BE =100 Ω) V CEV( su s) ∗ Collector-emitter Sustaining Voltage (V BE =-1.5 V) V CB = 80 V VCB = 100V 0.2 0.2 mA mA VCB = 80 V V CB = 100 V 5 5 mA mA V CE = 40 V V CE = 50V 0.5 0.5 mA mA V CE = 40 V V CE = 50 V 10 10 mA mA 5 mA for BDX33B/34B for BDX33C/34C Typ . 80 100 V V I C = 100 mA for BDX33B/34B for BDX33C/34C 80 100 V V I C = 100 mA for BDX33B/34B for BDX33C/34C 80 100 V V Collector-emitter Saturation Voltage IC = 3 A I B = 6 mA 2.5 V V BE ∗ Base-emitter Voltage IC = 3 A V CE = 3 V 2.5 V h FE∗ DC Current G ain IC = 3 A V CE = 3 V VF ∗ Parallel-Diode Forward Voltage IF = 8 A h fe Small Signal Current Gain IC = 1 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 Unit V EB = 5 V V CEO(s us) ∗ Collector-Emitt er Sustaining Voltage (IB = 0) V CE(sat) ∗ Max. for BDX33B/34B for BDX33C/34C o T cas e = 100 C for BDX33B/34B for BDX33C/34C Min. 750 V 4 V CE = 5 V f = 1MHz 100 V BDX33B BDX33C BDX34B BDX34C TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. inch 1.27 TYP. MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BDX33B BDX33C BDX34B BDX34C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4