FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16893 Generic Copy Issue Date: 29-Aug-2012 TITLE: Final Notification for Transfer of the NPN High Voltage Bipolar Power devices from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia). PROPOSED FIRST SHIP DATE: 29-Nov-2012 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Product Engineer Farrah Omar <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: ON Semiconductor is notifying customers of its plan to transfer High Voltage Bipolar Power devices from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia). The ISMF facility is an ON Semiconductor owned Wafer Fab that has been producing products for ON Semiconductor since 1998. Several existing technologies within ON Semiconductor’s product families are currently sourced from ISMF. ON Semiconductor Seremban Wafer Fab are TS16949, ISO-9001 and ISO-14000 certified. Qualification tests are designed to show that the reliability of transferred devices will continue to meet or exceed ON Semiconductor standards. Issue Date: 29-Aug-2012 Rev. 06-Jan-2010 Page 1 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16893 RELIABILITY DATA SUMMARY: Reliability testing was performed on qualification vehicles chosen based on die size, voltage rating, and run rates. Reliability Test Results: MJE18008G Test: HTRB Autoclave HTSL H3TRB IOL TC RSH Conditions: Ta=150°C,80% Rated Voltage Ta=121°C RH=100% ~15 psig Ta = 150°C Ta=85°C RH=85% bias=80% rated V or 100V Max Ta=25°C, Delta TJ = 100°C, Ton/off = 2 min. Ta= -65°C to 150°C Ta=260C, 10 sec dwell Interval: 1008 hrs 96 hrs 1008 hrs 1008 hrs Results 0/240 0/240 0/240 0/240 8572 cycles 0/240 1000 cycles 0/240 0/90 ELECTRICAL CHARACTERISTIC SUMMARY: Available upon request CHANGED PART IDENTIFICATION: Devices marked with date code A248 (A=Assembly site designator) and greater may have Die from either the ISMF Fab in Seremban (Malaysia) or the ZR Fab in Phoenix (USA). Issue Date: 29-Aug-2012 Rev. 06-Jan-2010 Page 2 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16893 List of affected General Parts: BU323ZG BUB323ZG BUB323ZT4G BUD42DT4G BUH100G BUH150G BUH50G BUL45D2G BUL45G BUX85G MJB5742T4G MJD47G Issue Date: 29-Aug-2012 MJD47T4G MJD50G MJD50T4G MJE13007G MJE13009G MJE15034G MJE18004G MJE18008G MJE5742G MJF18004G MJF18008G MJF47G Rev. 06-Jan-2010 MJW18020G NJD35N04G NJD35N04T4G NJVMJD47T4G NJVMJD50T4G NJVNJD35N04G NJVNJD35N04T4G SJC4196FP TEC0193BPF TIP47G TIP48G TIP50G Page 3 of 3