Product Overview

Product Overview
MJ11033: 50 A, 120 V PNP Darlington Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
Features
• High DC Current Gain hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built-In Base-Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb-Free Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
V(BR)CEO Min
(V)
VCE(sat) Max
(V)
hFE Min (k)
hFE Max (k)
fT Min (MHz) Package
Type
MJ11033G
Pb-free
Active
PNP
50
120
2.5
1
18
-
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO-204-2 /
TO-3-2