INFINEON SPP06N60C3_07

SPP06N60C3
CoolMOSTM Power Transistor
Product Summary
Features
• New revolutionary high voltage technology
• Ultra low gate charge
V DS @ T j,max
650
V
R DS(on),max
0.75
Ω
ID
6.2
A
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
PG-TO220-3-1
• Extreme dv /dt rated
• Improved transconductance
Type
Package
Ordering Code
Marking
SPP06N60C3
PG-TO220-3-1
Q67040-S4629
06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
6.2
T C=100 °C
3.9
Pulsed drain current1)
I D,pulse
T C=25 °C
18.6
Avalanche energy, single pulse
E AS
I D=3.1 A, V DD=50 V
200
Avalanche energy, repetitive t AR1),2)
E AR
I D=6.2 A, V DD=50 V
0.5
Avalanche current, repetitive t AR1)
I AR
Drain source voltage slope
dv /dt
Gate source voltage
Unit
A
mJ
6.2
A
I D=6.2 A, V DS=480 V,
T j=125 °C
50
V/ns
V GS
static
±20
V
V GS
AC (f >1 Hz)
±30
Power dissipation
P tot
T C=25 °C
74
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
Rev. 1.3
page 1
2007-08-28
SPP06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.7
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature4)
R thJC
K/W
R thJA
leaded
-
-
62
R thJA
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area3)
-
35
-
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
600
-
-
V
-
700
-
T sold
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=6.2 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.26 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
-
100
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=3.9 A,
T j=25 °C
-
0.68
0.75
Ω
V GS=10 V, I D=3.9 A,
T j=150 °C
-
1.82
-
Gate resistance
RG
f =1 MHz, open drain
-
1
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=3.9 A
-
5.6
-
Rev. 1.3
page 2
S
2007-08-28
SPP06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
620
-
-
200
-
-
17
-
-
28
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
-
47
-
Turn-on delay time
t d(on)
-
7
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
52
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
3.3
-
Gate to drain charge
Q gd
-
12
-
Gate charge total
Qg
-
24
31
Gate plateau voltage
V plateau
-
5.5
-
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=480 V,
V GS=10 V, I D=6.2 A,
R G=12 Ω
ns
Gate Charge Characteristics
V DD=480 V, I D=6.2 A,
V GS=0 to 10 V
1)
Pulse width limited by maximum temperature T j,max only
2)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
nC
V
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Soldering temperature for TO263: 220 °C, reflow
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.3
page 3
2007-08-28
SPP06N60C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
6.2
-
-
18.6
-
0.97
1.2
V
-
400
-
ns
-
3.5
-
µC
-
25
-
A
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
T C=25 °C
V GS=0 V, I F=6.2 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
A
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
typ.
R th1
0.0325
R th2
Value
Unit
typ.
K/W
C th1
0.0000502
0.0448
C th2
0.000303
R th3
0.251
C th3
0.000428
R th4
0.31
C th4
0.00243
R th5
0.301
C th5
0.00526
C th6
1.097)
Ws/K
7)
C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.
Rev. 1.3
page 4
2007-08-28
SPP06N60C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
80
102
limited by on-state
resistance
1 µs
60
10
1
10 µs
I D [A]
P tot [W]
100 µs
40
100
DC
1 ms
10 ms
20
10-1
0
10-2
0
40
80
120
100
160
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
20
20 V
7V
16
6.5 V
100
0.5
6V
I D [A]
Z thJC [K/W]
12
0.2
0.1
8
10
-1
0.05
5.5 V
0.02
0.01
single pulse
5V
4
4.5 V
4V
10-2
10-6
0
10-5
10-4
10-3
10-2
10-1
100
Rev. 1.3
0
5
10
15
20
V DS [V]
t p [s]
page 5
2007-08-28
SPP06N60C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
8
4
6V
20 V
7V
V4
5.5 V
V 4.5
V6
V 5.5
V5
6.5 V
6
3
R DS(on) [Ω]
I D [A]
5V
4
V 20
2
4.5 V
2
1
4V
0
0
0
5
10
15
20
0
2
4
V DS [V]
6
8
10
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=3.9 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
2
25
1.6
20
1.2
15
I D [A]
R DS(on) [Ω]
C °25
98 %
0.8
10
typ
C °150
0.4
5
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.3
0
2
4
6
8
10
V GS [V]
page 6
2007-08-28
SPP06N60C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=6.2 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
12
10
25 °C
V 120
25 °C, 98%
V 480
150 °C, 98%
101
8
I F [A]
V GS [V]
150 °C
6
100
4
2
10-1
0
0
10
20
0
30
0.5
Q gate [nC]
1
1.5
2
2.5
V SD [V]
11 Avalanche SOA
12 Avalanche energy
I AR=f(t AR)
E AS=f(T j); I D=3.1 A; V DD=50 V
parameter: T j(start)
8
250
200
6
E AS [mJ]
I AV [A]
150
4
100
125 °C
25 °C
2
50
0
10-3
0
10-2
10-1
100
101
102
103
t AR [µs]
Rev. 1.3
20
60
100
140
180
T j [°C]
page 7
2007-08-28
SPP06N60C3
14 Typ. capacitances
V BR(DSS)=f(T j); I D=0.25 mA
C =f(V DS); V GS=0 V; f =1 MHz
700
104
660
103
C [pF]
V BR(DSS) [V]
13 Drain-source breakdown voltage
620
Ciss
102
Coss
580
101
540
100
-60
-20
20
60
100
140
180
T j [°C]
Crss
0
100
200
300
400
500
V DS [V]
15 Typ. C oss stored energy
E oss= f(V DS)
5
4
E oss [µJ]
3
2
1
0
0
100
200
300
400
500
600
V DS [V]
Rev. 1.3
page 8
2007-08-28
SPP06N60C3
Definition of diode switching characteristics
Rev. 1.3
page 9
2007-08-28
SPP06N60C3
PG-TO220-3-1
Rev. 1.3
page 10
2007-08-28
SPP06N60C3
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 11
2007-08-28