A B C 4 D E 4 TP1 VIN 6V-24V TP2 GND R9 2.2 0805 TP3 G1 CONNECTION TO TO EXTERNAL MOSFET C1 R4 U1 LTC4441EMSE 1 0.1uF 25V 0805 2.2 0805 R5 OUT 10 PGND 2 BLANK R1 RBLANK 4 SGND 5 IN 3 S 7 C3 R3 100pF R6 10 2 FB C2 10uF 10V R2 330K VIN 8 10K * S S DRVCC 9 BLANK 3 G GATE2 2.2 0805 TP4 3 GATE1 * EN/SHDN 6 GND 11 49.9K 1% R7 12.4K 1% R8 84.5K 1% TP5 PWM INTPUT 2 * C3 and R6 can be removed if PWM source is close to U1. This circuit is proprietary to Linear Technology and supplied for use with Linear Technology parts. Customer Notice:Linear Technology has made a best effort to design a circuit that meets customer-supplied specifications; however, it remains the customers responsibility to verify proper and reliable operation in the actual application, Component substitution and printed circuit board layout may significantly affect circuit performance or reliability. Contact Linear Applications Engineering for assistance. 1 A B C Linear Technology Corp. 1630 McCarthy Blvd., Milpitas, CA 95035-7487 Phone: (408)432-1900 Fax: (408)434-0507 1 Title N-Channel MOSFET Gate Dr iver Size Date: Document Number Friday, September 16, 20 05 D Rev Demo Circuit 835A Sheet 1 1 of E 1