NPN Silicon Darlington Transistor SMBT 6427 For general amplifier applications ● High collector current ● High current gain ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 12 Collector current IC 500 Peak collector current ICM 800 Total power dissipation, TS = 74 ˚C Ptot 360 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 280 Junction - soldering point Rth JS ≤ 210 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 6427 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA V(BR)CE0 40 – – V Collector-base breakdown voltage IC = 100 µA V(BR)CB0 40 – – Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 12 – – Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 50 10 nA µA Collector cutoff current VCE = 30 V, IB = 0 ICE0 – – 1 µA Emitter-base cutoff current VEB = 10 V, IC = 0 IEB0 – – 50 nA DC current gain IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V hFE Collector-emitter saturation voltage1) IC = 50 mA, IB = 0.5 mA IC = 500 mA, IB = 0.5 mA VCEsat Base-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA Base-emitter voltage IC = 50 mA, VCE = 5 V – 10000 – 20000 – 14000 – 100000 200000 140000 V – – – – 1.2 1.5 VBEsat – – 2.0 VBE(on) – – 1.75 Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 130 – – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – – 7 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 25 Noise figure IC = 1 mA, VCE = 5 V, RS = 100 kΩ f = 1 kHz to 15 kHz NF – – 10 AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 dB SMBT 6427 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBT 6427 Base-emitter saturation voltage IC = f (VBE sat), hFE = 1000 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4