INFINEON SMBT6427

NPN Silicon Darlington Transistor
SMBT 6427
For general amplifier applications
● High collector current
● High current gain
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
SMBT 6427
s1V
Q68000-A8320
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
40
V
Collector-base voltage
VCB0
40
Emitter-base voltage
VEB0
12
Collector current
IC
500
Peak collector current
ICM
800
Total power dissipation, TS = 74 ˚C
Ptot
360
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
280
Junction - soldering point
Rth JS
≤
210
mA
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBT 6427
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Values
Symbol
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
40
–
–
V
Collector-base breakdown voltage
IC = 100 µA
V(BR)CB0
40
–
–
Emitter-base breakdown voltage, IE = 10 µA
V(BR)EB0
12
–
–
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0
–
–
–
–
50
10
nA
µA
Collector cutoff current
VCE = 30 V, IB = 0
ICE0
–
–
1
µA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEB0
–
–
50
nA
DC current gain
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
hFE
Collector-emitter saturation voltage1)
IC = 50 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
VCEsat
Base-emitter saturation voltage1)
IC = 500 mA, IB = 0.5 mA
Base-emitter voltage
IC = 50 mA, VCE = 5 V
–
10000 –
20000 –
14000 –
100000
200000
140000
V
–
–
–
–
1.2
1.5
VBEsat
–
–
2.0
VBE(on)
–
–
1.75
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
130
–
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
–
7
pF
Input capacitance
VEB = 0.5 V, f = 1 MHz
Cibo
–
–
25
Noise figure
IC = 1 mA, VCE = 5 V, RS = 100 kΩ
f = 1 kHz to 15 kHz
NF
–
–
10
AC characteristics
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
dB
SMBT 6427
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
3
SMBT 6427
Base-emitter saturation voltage
IC = f (VBE sat), hFE = 1000
Collector-emitter saturation voltage
IC = f (VCE sat), hFE = 1000
Collector cutoff current ICB0 = f (TA)
VCB = VCE max
DC current gain hFE = f (IC)
VCE = 5 V
Semiconductor Group
4