HITFETâ BSP 75N Smart Lowside Power Switch Data Sheet V1.0 Features • • • • • • • Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation Application • All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. Type Ordering Code Package HITFETâ BSP 75N Q67060-S7215 P-SOT223-4 Product Summary Parameter Symbol Value Unit Continuous drain source voltage VDS RDS(ON) ID(lim) ID(Nom) EAS 60 V 550 mΩ 1 A 0.7 A 550 mJ On-state resistance Current limitation Nominal load current Clamping energy Data Sheet V1.0 1 2003-01-10 HITFETâ BSP 75N Vbb HITFET M Logic OUTPUT Stage Over voltage Protection DRAIN dV/dt limitation IN ESD Current Limitation SOURCE Figure 2 1 IN 2 DRAIN 3 SOURCE TAB Block Diagram SOURCE Figure 1 Short circuit Protection Over temperature Protection Pin Configuration Pin Definitions and Functions Pin No. Symbol Function 1 IN Input; activates output and supplies internal logic 2 DRAIN Output to the load 3 + TAB SOURCE Ground; pin3 and TAB are internally connected Data Sheet V1.0 2 2003-01-10 HITFETâ BSP 75N Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions • Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min. 60V) when inductive loads are switched off. • Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the over temperature threshold is reached. • Over temperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Over temperature shutdown occurs at minimum 150 °C. A hysteresis of typ. 10 K enables an automatic restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings). Data Sheet V1.0 3 2003-01-10 HITFETâ BSP 75N Absolute Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Continuous drain source voltage 1) Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V ≤ VIN ≤ 10V VIN<-0.2V or VIN>10V Symbol Values Unit Remarks VDS VDS 60 V – 36 V – VIN VIN IIN -0.2 … +10 V – -0.2 … +20 V – mA – no limit | IIN |≤ 2mA Tj Tstg Ptot Power dissipation (DC) Unclamped single pulse inductive energy EAS Operating temperature range Storage temperature range -40 … +150 °C -55 … +150 °C – 1.8 W – 550 mJ ID(ISO) = 0.7 A; Vbb =32V VLoadDump = VP + VS; VP = 13.5 V RI3) = 2 Ω; td = 400 ms; Load dump protection 2) IN = low or high (8 V); RL = 50 Ω IN = high (8 V); RL = 22 Ω VLoadDump Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 4000 V – DIN humidity category, DIN 40 040 – E – – IEC climatic category, DIN IEC 68-1 – 40/150/56 – – RthJS RthJA ≤ 10 K/W – ≤ 70 K/W – V 80 47 Thermal Resistance Junction soldering point Junction - ambient4) 1) See also Figure 7 and Figure 10. 2) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7. 3) RI = internal resistance of the load dump test pulse generator LD200. 4) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection. Data Sheet V1.0 4 2003-01-10 HITFETâ BSP 75N Electrical Characteristics Tj = 25 °C, unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Static Characteristics Drain source clamp voltage VDS(AZ) 60 – 75 V Off state drain current IDSS – 5 µA Input threshold voltage VIN(th) 1 1.8 2.5 V Input current: normal operation, ID < ID(lim): IIN(1) current limitation mode, ID = ID(lim): IIN(2) After thermal shutdown, ID = 0 A: IIN(3) On-state resistance Tj = 25 °C Tj = 150 °C On-state resistance Tj = 25 °C Tj = 150 °C – µA ID = 10 mA, Tj = -40 … +150 °C VIN = 0 V, VDS = 32 V, Tj = -40 … +150 °C ID = 10 mA VIN = 5 V – 100 200 – 250 400 1000 1500 2000 RDS(on) – – 490 850 675 1350 RDS(on) – – 430 750 550 1000 mΩ ID = 0.7 A, VIN = 5 V mΩ ID = 0.7 A, VIN = 10 V Nominal load current ID(Nom) 0.7 – – A Current limit ID(lim) 1 1.5 1.9 A VBB = 12 V, VDS = 0.5 V, TS = 85 °C, Tj < 150 °C VIN = 10 V, VDS = 12 V Dynamic Characteristics 1) Turn-on time VIN to 90% ID: ton – 10 20 µs Turn-off time VIN to 10% ID: toff – 10 20 µs Data Sheet V1.0 5 RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V 2003-01-10 HITFETâ BSP 75N Electrical Characteristics (cont’d) Tj = 25 °C, unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Slew rate on 70 to 50% VBB: -dVDS/ – dton 5 10 V/ µs Slew rate off 50 to 70% VBB: dVDS/ dtoff – 10 15 V/ µs RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V Protection Functions2) Thermal overload trip temperature Tjt 150 165 180 °C – Thermal hysteresis ∆Tjt – 10 – Κ – mJ ID(ISO) = 0.7 A, VBB = 32 V V VIN = 0 V, -ID = 2 × 0.7 A Unclamped single pulse inductive EAS Tj = 25 °C energy Tj = 150 °C 550 200 – – – – – 1 – Inverse Diode Continuous source drain voltage VSD 1) See also Figure 9. 2) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation. Data Sheet V1.0 6 2003-01-10 HITFETâ BSP 75N EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Symbol Value Unit Remark Temperature TA 23 ±5 °C – Supply Voltage VS 13.5 V – Load RL 27 Ω ohmic Operation mode PWM DC – – – – fINx=100Hz, D=0.5 ON / OFF DUT specific VIN(’HIGH’)=5V Fast electrical transients acc. to ISO 7637 1) Test1) Pulse Max. Test Level Test Result ON OFF Pulse Cycle Time and Generator Impedance 1 -200V C C 500ms ; 10Ω 2 +200V C C 500ms ; 10Ω 3a -200V C C 100ms ; 50Ω 3b +200V C C 100ms ; 50Ω 4 -7V C C 0.01Ω 5 175V E(65V) E(75V) 400ms ; 2Ω The test pulses are applied at VS Definition of functional status Class Content C All functions of the device are performed as designed after exposure to disturbance. E One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Data Sheet V1.0 7 2003-01-10 HITFETâ BSP 75N Conducted Susceptibility PULSE VBB Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) RL BSP75N IN Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. 10% at OUT DRAIN SOURCE Typ. Vbb Susceptibility at DC-ON/OFF and at PWM Figure 3 40 Test circuit for ISO pulse 35 30 Conducted Emissions 25 dBm Acc. IEC 61967-4 (1Ω/150Ω method) 20 15 Typ. Vbb Emissions at PWM-mode with 150Ω-matching network 100 10 Noise level BSP75N 150ohm Class6 150ohm Class1 90 80 Limit OUT, ON OUT, OFF OUT, PWM 5 0 1 10 100 1000 f / MHz 70 60 dBµV 50 150Ω / 8-H 40 VBB 30 20 BAN 150Ω / 13-N 10 0 BSP75N -10 -20 0,1 1 10 100 1000 IN f / MHz RL DRAIN SOURCE HF VBB Test circuit for conducted susceptibility BSP75N IN 2) RL DRAIN SOURCE 1) 150Ω Ω-Network 2) Figure 4 Test circuit for conducted emission 1) Data Sheet V1.0 8 For defined de coupling and high reproducibility a defined choke (5µH at 1MHz) is inserted in the Vbb-Line. Broadband Artificial Network (short: BAN) consists of the same choke (5µH at 1MHz) and the same 150 Ohm-matching network as for emission measurement for defined de coupling and high reproducibility. 2003-01-10 HITFETâ BSP 75N Block diagram VBB ID uC Vcc IIN HITFET IN VIN Px.1 Vbb DRAIN SOURCE GND IN D SOURCE VDS Figure 8 Figure 5 BSP75N Application Circuit Terms IN SOURCE Figure 6 Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. LOAD Drain VAZ VDS Power DMOS Source ID Figure 7 Inductive and Over voltage Output Clamp Data Sheet V1.0 9 2003-01-10 HITFETâ BSP 75N Timing diagrams VIN VIN t ID VDS t t ϑj 0.9*ID ID t ID(lim) thermal hysteresis t 0.1*ID ton Figure 9 toff t Figure 11 Short circuit Switching a Resistive Load VIN VDS(AZ) t VBB VDS t ID t Figure 10 Switching an Inducitve Load Data Sheet V1.0 10 2003-01-10 HITFETâ BSP 75N 2 On-state resistance RON = f(Tj); ID = 0.7 A; VIN = 10 V 1 Max. allowable power dissipation Ptot = f(TAmb) 2 P 10 0 0 R to t ON 9m0Ω 0 1W ,6 800 m ax. 700 m a x. 600 1 ,2 typ . 500 400 0 ,8 300 200 0 ,4 100 0 0 0 25 50 75 100 1°C 25 -50 -25 150 T 25 50 75 1 0 0 1°C 2 5 15 0 T Amb 3 On-state resistance RON = f(Tj); ID = 0.7 A; VIN = 5 V j 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V 1400 R 0 2,5 V ON IN (th ) 1m 2 0Ω0 V2 1000 typ . m a x. 1,5 800 typ . 600 1 400 0,5 200 0 0 -5 0 -2 5 0 25 50 7 5 1 0 0 1°C 25 150 T Data Sheet V1.0 -50 -25 0 25 50 75 °C5 15 0 1 00 12 T j 11 j 2003-01-10 HITFETâ BSP 75N 5 Typ. on-state resistance RON = f(VIN); ID = 0.7 A; Tj = 25 °C 6 Typ. current limitation ID(lim) = f(Tj); VDS = 12 V, VIN = 10 V 2000 R 2 I D (lim ) ON typ . 1m 5 0Ω0 typ . 1A,5 1000 1 500 0 ,5 0 0 0 2 4 6 V 8 10 V -5 0 -2 5 0 25 50 75 1 0 0 1°C 25 150 T IN 7 Typ. short circuit current ID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C j 8 Max. transient thermal impedance ZthJA = f(tp) @ 6cm²; Parameter: D = tp/T 100 2 I D (S C ) Z th (J A ) typ . 1A,5 10 K /W 1 D= 0 .5 0 .2 0 .1 1 0 .0 5 0 .0 2 0 .0 1 0 0 ,5 0 0 2 4 6 V 8 V Data Sheet V1.0 0 ,1 10 0 ,0 0 0 0 1 IN 12 0 ,0 0 1 0 ,1 10 1 0 0s0 100000 tP 2003-01-10 HITFETâ BSP 75N Package Outlines P-SOT223-4 (Small Outline Transistor) 1.6 ±0.1 6.5 ±0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 ±0.2 4 0.5 min B 7 ±0.3 3 ±0.1 15˚max A 3 0.28 ±0.04 2.3 0.7 ±0.1 4.6 M 0.25 A M B GPS05560 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Data Sheet V1.0 13 Dimensions in mm 2003-01-10 HITFETâ BSP 75N Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Tech-nologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are in-tended to be implanted in the human body, or to support and/ or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet V1.0 14 2003-01-10