INFINEON BTS3207N

HITFETÒ II.Generation BTS 3207N
Smart Lowside Power Switch
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
· Input Protection (ESD)
On-state resistance
RDS(on)
500
mW
· Thermal shutdown with
Nominal load current
ID(Nom)
0.64
A
Clamping energy
EAS
150
mJ
auto restart
42
V
· Overload protection
· Short circuit protection
4
· Overvoltage protection
· Current limitation
3
2
· Analog driving possible
1
VPS05163
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET â
Drain
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
Page 1
V1.0, 2004-11-19
BTS 3207N
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
42
Supply voltage for full short circuit protection6)
Vbb(SC)
42
Continuous input voltage1)
VIN
Continuous input current2)
IIN
-0.2V £ VIN £ 10V
Unit
V
-0.22) ... +10
mA
self limited
| IIN | £ 2
VIN < -0.2V or VIN > 10V
°C
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation 5)
Ptot
3.8
W
Unclamped single pulse inductive energy 2)
EAS
150
mJ
Load dump protection VLoadDump2)3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
VLD
50
V
2
kV
TC = 85 °C
RL = 9 W, VA = 13.5 V
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
MSL1
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN EN 60068-1
40/150/56
Thermal resistance
RthJA
junction - ambient:
K/W
@ min. footprint
125
@ 6 cm 2 cooling area 4)
72
junction-soldering point:
RthJS
17
K/W
1For input voltages beyond these limits I has to be limited.
IN
2not subject to production test, specified by design
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by R
thJA and Rds(on)
6For supply voltages above 22V the voltage drop V has to be limited by Rsc=100mohm/V
on
Target Data Sheet
Page 2
V1.0, 2004-11-19
BTS 3207N
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
Characteristics
Drain source clamp voltage
VDS(AZ)
V
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current
µA
IDSS
Tj = -40...+85 °C, V bb = 32 V, VIN = 0 V
-
1.5
8
Tj = 150 °C
-
4
10
Input threshold voltage
V
VIN(th)
ID = 0.3 mA, Tj = 25 °C
1.3
1.7
2.2
ID = 0.3 mA, Tj = 150 °C
0.8
-
-
-
10
30
On state input current
IIN(on)
On-state resistance
RDS(on)
mW
VIN = 5 V, ID = 1.4 A, Tj = 25 °C
-
-
600
VIN = 5 V, ID = 1.4 A, Tj = 150 °C
-
-
1200
VIN = 10 V, I D = 1.4 A, Tj = 25 °C
-
-
500
VIN = 10 V, I D = 1.4 A, Tj = 150 °C
-
-
1000
0.64
-
-
5
7.5
10
On-state resistance
µA
RDS(on)
Nominal load current 5)
ID(Nom)
A
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C
Current limit (active if VDS>2.5 V)1)
ID(lim)
VIN = 10 V, VDS = 12 V, t m = 200 µs
1Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by R
thJA and Rds(on)
Target Data Sheet
Page 3
V1.0, 2004-11-19
BTS 3207N
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
45
100
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID:
toff
-
60
100
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
-dVDS/dt on
-
0.4
1.5
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
dVDS/dtoff
-
0.6
1.5
150
175
-
°C
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
V/µs
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Tjt
Thermal hysteresis 2)
DTjt
-
10
-
K
Input current protection mode
IIN(Prot)
-
40
300
µA
EAS
150
-
-
mJ
VSD
-
1
1.5
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 1.4 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
V
IF = 7 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Target Data Sheet
Page 4
V1.0, 2004-11-19
BTS 3207N
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
I IN
1
D
IN
2
ID
VDS
D
Z
Vbb
HITFET
VIN
S
S
3
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
Target Data Sheet
Page 5
V1.0, 2004-11-19
BTS 3207N
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(TS) resp.
RON = f(Tj ); ID=1.4A; V IN=10V
Ptot = f(TA) @ R thJA=72 K/W
10
1000
8
800
RDS(on)
max.
7
Ptot
max.
mW
W
6
700
600
5
500
4
400
3
300
2
200
6cm2
1
0
-75
100
-50
-25
0
25
50
75
100 °C
0
-50
150
-25
0
25
50
75
100 125 °C
TS ;TA
3 On-state resistance
4 Typ. input threshold voltage
RON = f(T j); ID= 1.4A; V IN=5V
VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V
1250
2
mW
V
max.
1.6
VGS(th)
RDS(on)
1000
875
750
1.4
1.2
625
1
500
0.8
375
0.6
250
0.4
125
0.2
0
-50
175
Tj
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Target Data Sheet
-25
0
25
50
75
100
°C
150
Tj
Page 6
V1.0, 2004-11-19
BTS 3207N
5 Typ. transfer characteristics
6 Typ. short circuit current
I D=f(V IN); VDS=12V; T Jstart=25°C
ID(lim) = f(Tj); VDS=12V
Parameter: VIN
10
8
A
A
8
7
ID(lim)
ID
6
5
6
Vin=10V
5
4
5V
4
3
3
2
2
1
0
0
1
1
2
3
4
5
6
7
8
V
0
-50
10
-25
0
25
50
75
VIN
8 Off-state drain current
I D=f(V DS); T Jstart=25°C
Parameter: VIN
IDSS = f(Tj)
Vin=10V
A
175
Tj
7 Typ. output characteristics
10
100 125 °C
11
µA
7V
max.
9
8
6V
8
5V
6
IDSS
ID
7
4V
7
6
5
5
4
typ.
4
3
3
3V
2
2
1
0
0
1
1
2
3
4
V
0
-50
6
VDS
Target Data Sheet
-25
0
25
50
75
100 125 °C
175
Tj
Page 7
V1.0, 2004-11-19
BTS 3207N
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb=12 V, no heatsink
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: Tjstart
Parameter: D=tp/T
10 2
12
K/W
A
-40°C
8
0.2
0.1
25°C
ZthJA
ID(lim)
10 1
D=0.5
85°C
0.05
10 0
6
0.02
0.01
150°C
4
10 -1
2
Single pulse
0
0
0.5
1
1.5
2
2.5
3
ms
10 -2 -7 -6 -5 -4 -3 -2 -1 0
1
2
10 10 10 10 10 10 10 10 10 10
4
s 10
4
tp
t
11 Determination of ID(lim)
ID(lim) = f(t); t m = 200µs
Parameter: TJstart
12
ID(lim)
A
-40°C
8
25°C
85°C
6
4
150°C
2
0
0
0.1
0.2
0.3
0.4
ms
0.55
t
Target Data Sheet
Page 8
V1.0, 2004-11-19
BTS 3207N
Package
Ordering Code
SOT-223
1.6 ±0.1
6.5 ±0.2
+0.2
acc. to
DIN 6784
1
2
3
3.5 ±0.2
4
7 ±0.3
B
15˚ max
0.1 max
3 ±0.1
0.5 min
A
0.28 ±0.04
2.3
0.7 ±0.1
4.6
0.25
M
A
0.25
M
B
GPS05560
Target Data Sheet
Page 9
V1.0, 2004-11-19
BTS 3207N
Revision History :
Previous version :
Page
2004-11-19
Subjects (major changes since last revision)
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Target Data Sheet
Page 10
V1.0, 2004-11-19