FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 20-DEC-2002 SUBJECT: ON Semiconductor Final Product/Process Change Notification #12648 TITLE: Final Notification for IPCN# 11335, Wafer Capacity Addition for MOSAIC5 Technology-Group 2. EFFECTIVE DATE: 18-Feb-2003 AFFECTED CHANGE CATEGORY: ON Semiconductor Fab Site & Wafer Process AFFECTED PRODUCT DIVISION: Broadband Products ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Keith Stapley <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Tim Gurnett <[email protected]> DISCLAIMER: Final Product/Process Change Notification (FPCN) - Final Notification completing the notification process. Distributed at least 60 days from the effective date of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: ON Semiconductor is pleased to announce the Qualification and Process Certification of the COM1 wafer fabrication facility located in Phoenix, Arizona to manufacture MOSAIC5 Bipolar technology products. MOSAIC5 products were previously fabricated in the Motorola MOS6 wafer fabrication facility in Mesa, Arizona. This is the Final PCN for the listed devices. During the next several quarters, additional devices will be released, after completion of qualification. The effective date of this change will be 60 days from the issuance of this PCN for the devices listed. A Final PCN update notification will be announced for each group of parts as samples and electrical characterization data become available. Device parameters will continue to meet all Data Book specifications, and reliability will continue to meet or exceed ON Semiconductor standards. In the course of reviewing the electrical data for the Group 2 released parts, typographical errors found in the data sheets will be corrected to match Low Voltage Family specification as provided by Design. VOL (max) limits will change to -1635 mV @. -40C, -1570 @ +25C and -1510 @ 85C for the MC10LVEP16 datasheet. There were no changes to the actual design or function of the parts. Issue Date: 20 Dec, 2002 Page 1 of 3 Final Product/Process Change Notification #12648 RELIABILITY DATA SUMMARY: Reliability Test Results: Below is a summary of the reliability results. A more detailed reliability report is available upon request. Test High Temp Op Life (HTOL) Conditions Tj =150DegC for 504 hours Results 0/479 High Temp Bake (HTB) 150DegC for 1008 hours 175DegC for 504 hours 0/480 0/480 Preconditioning for MSL-1 (PC) IR at 235DegC, TC, HAST, AC (Only for EP16 device) 0/957 Preconditioning for MSL-2 (PC) IR at 235DegC, TC, THB, AC (Only for EP111 device) 0/720 PC-HAST 130DegC/85% RH/18.8 PSIG for 96 Hrs (Only for EP16 device) 0/240 PC-THB 85DegC/85% RH/18.8 PSIG for 1008 Hrs (Only for EP111 device) 0/240 PC-Autoclave (AC) 121DegC/100% RH/15 PSIG for 96 hours 0/480 PC-Temp Cycling (TC) -65DegC to +150DegC; for 500 cycles 0/635 Bond Pull Strength (BPS) Per Factory Testing with CpK>= 1.33 MEETS OR EXCEEDS CRITERIA Bond Shear Test (BS) Per Factory Testing with CpK>= 1.33 MEETS OR EXCEEDS CRITERIA ESD per JEDEC Standard Human Body Model (HBM) Machine Model (MM) Charge Device Model (CDM) MEETS OR EXCEEDS CRITERIA Destructive Physical Analysis (DPA) Analysis done after PC-Temp Cycling MEETS OR EXCEEDS CRITERIA Intrinsic Reliability (IR) Compare to MOS6 results for Stress migration, Electromigration & Hot Carrier Injection MEETS OR EXCEEDS CRITERIA Critical Parameter Shifts Analysis (CPA) Datalog units and examine VOH and VOL before and after test on all HTOL and Temp cycled units MEETS OR EXCEEDS CRITERIA Skew Analysis (SA) Examine 5 units from each group for tskew before and after HTOL and Temp Cycle tests MEETS OR EXCEEDS CRITERIA Issue Date: 20 Dec, 2002 Page 2 of 3 Final Product/Process Change Notification #12648 Test Conditions Results Construction Analysis (CA) Compare to MOS6 results MEETS OR EXCEEDS CRITERIA Parameter Verification Electrical Characterization/distribution summary of Critical Parameters AVAIL Qualification Vehicle Justification Technology MOSAIC5 Qualification Device MC10EP16DT MC100LVEP111FA Reason Chosen Smallest Array Base, TSOP8 Largest Array Base, 32 pin TQFP ELECTRICAL CHARACTERISTIC SUMMARY: Electrical Characterization data is available upon request. CHANGED PART IDENTIFICATION: Product marked after WW09, 2003 may contain COM1 die. Customers are encouraged to contact ON Semiconductor to order samples. AFFECTED DEVICE LIST(WITHOUT SPECIALS): PART MC100EP116FA MC100EP116FAR2 MC100EP16D MC100EP16DR2 MC100EP16DT MC100EP16DTR2 MC10EP116FA MC10EP116FAR2 MC10LVEP16D MC10LVEP16DR2 MC10LVEP16DT MC10LVEP16DTR2 MCW100EP16 MCW10EP116 Issue Date: 20 Dec, 2002 Page 3 of 3