IPD042P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS • single P-Channel (Logic Level) R DS(on),max • Enhancement mode • Qualified according JEDEC 1) for target applications -30 V V GS = 10V 4.2 mΩ V GS = 4.5V 6.8 ID -70 A • 175 °C operating temperature • Pb-free; RoHS compliant PG-TO252-3 • applications: load switch, HS-switch Type Package Marking Lead free Packing IPD042P03L3 G PG-TO252-3 042P03L Yes non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C -70 T C=100 °C -70 Unit A Pulsed drain current I D,pulse T C=25 °C2) -280 Avalanche energy, single pulse E AS I D=-70 A, R GS=25 Ω 269 mJ Gate source voltage V GS ±20 V Power dissipation P tot 150 W Operating and storage temperature T j, T stg -55 ... 175 °C ESD class T C =25 °C JESD22-A114 HBM 260 Soldering temperature Rev. 2.0 °C 55/175/56 IEC climatic category; DIN IEC 68-1 1) class 2 ( 2 kV - < 4 kV) J-STD20 and JESD22 page 1 2009-08-18 IPD042P03L3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.0 - - 50 -30 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA Gate threshold voltage V GS(th) V DS=V GS, I D=-270 µA -2.0 -1.5 -1.0 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 V DS=-30 V, V GS=0 V, T j=175 °C - - -300 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-70 A - 4.6 6.8 mΩ V GS=-10 V, I D=-70 A - 3.5 4.2 - 2.4 - Ω 65 130 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-70 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2009-08-18 IPD042P03L3 G Parameter Values Symbol Conditions Unit min. typ. max. - 9290 12400 pF - 3570 4750 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 150 220 Turn-on delay time t d(on) - 21 33 Rise time tr - 167 251 Turn-off delay time t d(off) - 89 134 Fall time tf - 22 33 Gate to source charge Q gs - 31 41 Gate charge at threshold Q g(th) - 15 20 Gate to drain charge Q gd - 14 21 Switching charge Q sw - 30 42 Gate charge total Qg - 131 175 Gate plateau voltage V plateau - 3.3 - Output charge Q oss - 84 111 nC - - 70 A - - 280 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-70 A, R G=6 Ω ns Gate Charge Characteristics 3) V DD=-15 V, I D=-70 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-70 A, T j=25 °C - - -1.1 V Reverse recovery time t rr V R=15 V, I F=|I S|, di F/dt =100 A/µs - 54 68 ns Reverse recovery charge Q rr - 61 76 nC Rev. 2.0 T C=25 °C page 3 2009-08-18 IPD042P03L3 G 1 Power dissipation 2 Drain current P tot=f(T C); t p≤10 s I D=f(T C); |V GS|≥10 V; t p≤10 s 75 140 70 130 65 120 60 110 55 100 50 90 45 -I D [A] 80 150 P tot [W] 160 80 70 40 35 60 30 50 25 40 20 30 15 20 10 10 5 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 1000 101 10 100 1 1 µs 102 100 µs 100 1 ms 10 ms 10 10 0 0.5 Z thJS [K/W] limited by on-state resistance -I D [A] 101 DC 0.2 1 0.1 10-1 0.1 0.05 0.02 10-1 0.01 0.1 single pulse 10-2 0.1 10 Rev. 2.0 10-2 0.01 1 -1 10 10 0 -V DS [V] 10 100 1 10 2 page 4 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] 10 101 2009-08-18 IPD042P03L3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 70 30 -10 V -3.5 V -2.7 V -4.5 V 60 -3.2 V 25 50 -3 V R DS(on) [mΩ] -I D [A] 20 40 -3 V 30 15 10 -3.2 V 20 -3.5 V -2.7 V 5 10 -4.5 V -10 V -2.5 V -2.3 V 0 0 1 2 0 3 0 10 20 -V DS [V] 30 40 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 70 140 60 120 50 100 40 80 g fs [S] -I D [A] parameter: T j 30 20 60 40 175 °C 10 20 25 °C 0 0 0 1 2 3 4 Rev. 2.0 0 10 20 30 40 50 60 70 -I D [A] -V GS [V] page 5 2009-08-18 IPD042P03L3 G 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-30 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-270 µA 7 2.5 6 2 5 1.5 -V GS(th) [V] R DS(on) [mΩ] 9 Drain-source on-state resistance 98 % 4 typ. 3 max. typ. min. 1 0.5 2 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 100 Ciss 104 10 I F [A] C [pF] Coss 103 175 °C, typ 175 °C, 98% 1 25 °C, typ 102 Crss 25 °C, 98% 0.1 0 5 10 15 20 25 30 Rev. 2.0 0 0.5 1 -V SD [V] -V DS [V] page 6 2009-08-18 IPD042P03L3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-70 A pulsed parameter: T j(start) parameter: V DD 10 2 10 9 25 °C 8 100 °C -15 V 7 150 °C -6 V -24 V -I AV [A] -V GS [V] 6 101 5 4 3 2 1 0 0 100 100 10 1 t AV [µs] 10 2 10 15 Drain-source breakdown voltage 20 40 60 80 100 120 140 -Q gate [nC] 3 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 32 V GS Qg -V BR(DSS) [V] 31 30 V g s(th) 29 Q g(th) Q sw Q gs 28 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2009-08-18 IPD042P03L3 G Package Outline PG-TO252-3 Dimensions in mm Rev. 2.0 page 8 2009-08-18 IPD042P03L3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2009-08-18