Product Overview NTHC5513: Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET For complete documentation, see the data sheet Product Description This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications. Features • • • • • • Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages Low RDS(on) in a ChipFET™ Package for High Efficiency Performance Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics Complentary N Channel and P Channel MOSFET Applications • • • • Load Switch Applications Requiring Level Shift DC-DC Conversion Circuits Drives Small Brushless DC Motors Designed for Power Management Applications in Portable and Battery Power Products Part Electrical Specifications Product NTHC5513T1G Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on VGS Ma x (V) VGS Co mpl em ent ary Dua 20 l 12 1.2 (th) Ma x (V) ID Ma x (A) PD Ma x (W) rDS( rDS( rDS( on) on) on) 3.9 2.1 115 80 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) 4 Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 0.7 6 180 80 25 Chi pFE T-8