Product Overview

Product Overview
NTHC5513: Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET
For complete documentation, see the data sheet
Product Description
This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low
RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.
Features
•
•
•
•
•
•
Small Size, 40% Smaller than TSOP-6 Package
Leadless SMD Package Featuring Complementary Pair
ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages
Low RDS(on) in a ChipFET™ Package for High Efficiency Performance
Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics
Complentary N Channel and P Channel MOSFET
Applications
•
•
•
•
Load Switch Applications Requiring Level Shift
DC-DC Conversion Circuits
Drives Small Brushless DC Motors
Designed for Power Management Applications in Portable and Battery Power Products
Part Electrical Specifications
Product
NTHC5513T1G
Compliance
Pb-free
Halide free
Status
Active
Cha
nne
l
Pol
arit
y
Con V(BR
figu )DSS
rati Min
(V)
on
VGS
Ma
x
(V)
VGS
Co
mpl
em
ent
ary
Dua 20
l
12
1.2
(th)
Ma
x
(V)
ID
Ma
x
(A)
PD
Ma
x
(W)
rDS(
rDS(
rDS(
on)
on)
on)
3.9
2.1
115
80
Ma
x@
VGS
=
2.5
V
(mΩ)
Ma
x@
VGS
=
4.5
V
(mΩ)
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Ma
x@
VGS
=
10
V
(mΩ)
Qg
Typ
@
VGS
=
4.5
V
(nC
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4
Qg
Typ
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VGS
=
10
V
(nC
)
Qgd
Typ
@
VGS
=
4.5
V
(nC
)
Qrr
Typ
(nC
)
Ciss Coss Crss Pac
Typ Typ Typ kag
(pF) (pF) (pF) e
Typ
e
0.7
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180
80
25
Chi
pFE
T-8