VISHAY 1N5418

1N5417, 1N5418
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Low forward voltage drop
• High pulse current capability
949588
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
• Halogen-free according to IEC 61249-2-21 definition
Case: SOD-64
APPLICATIONS
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
• Fast rectification diode
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
1N5417
VR = 200 V; IFAV = 3 A
SOD-64
1N5418
VR = 400 V; IFAV = 3 A
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche
energy
PART
SYMBOL
VALUE
UNIT
1N5417
VR = VRRM
200
V
1N5418
VR = VRRM
400
V
tp = 10 ms, half sine wave
IFSM
100
A
l = 10 mm, TL = 25 °C
IFAV
3
A
I(BR)R = 1 A
ER
20
mJ
Tj = Tstg
- 55 to + 175
°C
See electrical characteristics
Junction and storage temperature
range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Document Number: 86097
Rev. 1.4, 30-Jul-10
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
1N5417, 1N5418
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 3 A
VF
-
-
1.1
V
IF = 9 A
VF
-
-
1.5
V
VR = VRRM
IR
-
-
1
μA
VR = VRRM, Tj = 100 °C
IR
-
-
20
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
75
100
ns
Forward voltage
Reverse current
Reverse recovery time
PART
3.5
40
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
30
20
l
l
10
TL = constant
VR = VRRM
half sinewave
3.0
2.5
RthJA = 25 K/W
I = 10 mm
2.0
1.5
RthJA = 70 K/W
PCB: d = 25 mm
1.0
0.5
0
0
0
5
10
15
20
25
l - Lead Length (mm)
949466
0
30
Fig. 1 - Max. Thermal Resistance vs. Lead Length
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16388
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
10
IR - Reverse Current (μA)
IF - Forward Current (A)
VR = VRRM
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
100
10
1
25
0.001
0
16387
0.5
1.0
1.5
2.0
2.5
VF - Forward Voltage (V)
Fig. 2 - Max. Forward Current vs. Forward Voltage
www.vishay.com
2
16389
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86097
Rev. 1.4, 30-Jul-10
1N5417, 1N5418
180
120
f = 1 MHz
140
120
PR-Limit
at 100 % VR
100
80
60
PR-Limit
at 80 % VR
40
20
100
80
60
40
20
0
0.1
0
25
16390
Vishay Semiconductors
VR = VRRM
160
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
Fast Avalanche Sinterglass Diode
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Zthp - Thermal Resist. for Pulse Cond. (K/W)
1
10
100
VR - Reverse Voltage (V)
16391
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
VRRM = 600 V
RthJA = 70 K/W
100
Tamb = 25 °C
tp/T = 0.5
100 °C
0.2
10
45 °C
0.1
70 °C
0.05
0.02
0.01
1
10-4
10-3
949562
10-2
10-1
10-0
101
102
tp - Pulse Length (s)
100
101
102
IFRM - Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86097
Rev. 1.4, 30-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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