VISHAY BY458

BY448 , BY458
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
949539
• High voltage rectification
MECHANICAL DATA
• Efficiency diode in horizontal deflection circuits
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BY448
VR = 1500 V; IFAV = 2 A
SOD-57
BY458
VR = 1200 V; IFAV = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
See electrical characteristics
Peak forward surge current
PART
SYMBOL
VALUE
UNIT
BY448
VR = VRRM
1500
V
BY458
VR = VRRM
1200
V
IFSM
30
A
IFAV
2
A
°C
tp = 10 ms, half sine wave
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
l(BR)R = 0.4 A
Tj
140
Tstg
- 55 to + 175
°C
ER
10
mJ
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Total reverse recovery time
Reverse recovery time
Document Number: 86006
Rev. 1.7, 09-Aug-10
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
IF = 3 A
VF
-
-
1.6
UNIT
V
VR = VRRM
IR
-
-
3
μA
μA
VR = VRRM, Tj = 140 °C
IR
-
-
140
IF = 1 A, - dIF/dt = 0.05 A/μs
trr
-
-
20
μs
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
2
μs
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
147
BY448 , BY458
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
RthJA - Ther. Resist. Junction/Ambient (K/W)
120
1000
l
l
VR = VRRM
IR - Reverse Current (μA)
100
80
TL = constant
60
40
20
100
10
1
0
0
5
10
15
20
25
30
25
16419
50
75
100
125
150
l - Lead Length (mm)
Tj - Junction Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 4 - Reverse Current vs. Junction Temperature
949101
Tj = 150 °C
10
IF - Forward Current (A)
PR - Reverse Power Dissipation (mW)
100
1
Tj = 25 °C
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VR = VRRM
350
300
200
PR - Limit at 80 % VR
150
100
50
0
25
50
75
100
125
150
Tj - Junction Temperature (°C)
16420
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
2.5
35
VR = VRRM
f = 1 MHz
half sine wave
RthJA = 45 K/W
2.0
l = 10 mm
1.5
1.0
RthJA = 100 K/W
0.5
30
CD - Diode Capacitance (pF)
IFAV - Average Forward Current (A)
PR - Limit at 100 % VR
250
5
VF - Forward Voltage (V)
16417
400
PCB: d = 25 mm
25
20
15
10
5
0
0
0
16418
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
www.vishay.com
148
0.1
16421
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86006
Rev. 1.7, 09-Aug-10
BY448 , BY458
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Document Number: 86006
Rev. 1.7, 09-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
149
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Document Number: 91000
Revision: 11-Mar-11
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