BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages • High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz • 150 GHz fT-Silicon Germanium technology • Extremly small and flat leadless package, reduced height 0.32 mm max. • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR750L3RH 1Pb-containing Marking R8 1=B Pin Configuration 2=C 3=E Package TSLP-3-9 package may be available upon special request 1 2007-04-26 BFR750L3RH Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0°C 4 TA ≤ 0°C 3.5 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 90 Base current IB 9 Total power dissipation1) Ptot 360 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 96°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS ≤ 150 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter min. typ. max. V(BR)CEO 4 4.7 - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 160 250 400 - DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 60 mA, VCE = 3 V, pulse measured 1T S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note Thermal Resistance 2For R thJS demanded by Ptot and TS, to be fulfilled by design 2 2007-04-26 BFR750L3RH Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 37 - Ccb - 0.24 0.42 Cce - 0.31 - Ceb - 0.97 - GHz IC = 60 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB F IC = 25 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 25 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) - 0.6 - - 1.1 - G ms - 21 - dB G ma - 11.5 - dB IC = 60 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 60 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 6 GHz |S 21e|2 Transducer gain dB IC = 60 mA, VCE = 3 V, Z S = ZL = 50 Ω, f = 1.8 GHz - 18 - - 8 - IP 3 - 29.5 - P-1dB - 16.5 - IC = 60 mA, VCE = 3 V, Z S = ZL = 50 Ω, f = 6 GHz Third order intercept point at output2) dBm VCE = 3 V, I C = 60 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 60 mA, VCE = 3 V, Z S = ZL = 50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2007-04-26 BFR750L3RH SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 2.66 e-12 95 1.8 1.33 2 0.9 0.475 0.0021 2540 0.45 1.2 0.25 0.436 mA V V - 1 - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = Ω pF ns mA V ns - mA mA 753 292 76 1.33 1 20 0.69 3 0.5 0.31 0.325 -2.2 0.5 0 Ω mΩ V - pF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.015 1.54 e-11 1 1 e-27 1 e15 0.9 0.085 2.1 0.173 0.01 0.65 1.11 25 mA mA A Lbb_chip = Lcc_chip = Lbb_pack = Lcc_pack = Lee_pack = Cbc_chip = Ccb_chip = Cce_chip = Cbe_pack = Cce_pack = Rbc_chip = Ree chip = 0.212 0.07472 0.0184 nA nH nH nH nH pF pF pF pF pF Ω Ω Ω V pF V °C - All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: Ccb_chip Rbc_chip Lcc_chip Cbc_chip Lbb_pack Lbb_chip B Transistor Model Lcc_pack C E Cce_chip Ree_chip Lee_pack 0.277 0.239 0.015 0.013 0.282 0.064 0.0492 7 0.566 Valid up to 6GHz Cbe_pack Cce_pack For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com 4 2007-04-26 BFR750L3RH Total power dissipation Ptot = ƒ(TS) Permissible Puls Load R thJS = ƒ (tp) 400 350 300 2 10 RthJS [K/W] Ptot [mW] 250 200 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D=0 150 1 10 100 → tp ← D=tp /T 50 ← T → 0 10 0 0 15 30 45 60 75 90 105 120 135 −8 10 150 T [°C] −6 10 −4 10 S −2 10 0 10 tp [s] Permissible Pulse Load Collector-base capacitance Ccb = ƒ (V CB) Ptotmax/P totDC = ƒ(tp) f = 1 MHz 2 10 0.6 → tp ← D=tp /T 0.55 0.5 ← T → 0.45 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 1 10 0.35 Ccb [pF] Ptotmax/PtotDC 0.4 0.3 0.25 0.2 0.15 0.1 0.05 0 10 −8 10 0 −6 10 −4 10 −2 10 0 10 0 2 4 6 8 10 12 VCB [V] tp [s] 5 2007-04-26 BFR750L3RH Transition frequency fT = ƒ(IC) Power gain Gma, Gms = ƒ (f) VCE = parameter, f = 1 GHz VCE = 3 V, I C = 60 mA 45 40 2V to 4V 40 35 1.00V 35 30 30 0.75V 25 Gms G [dB] fT [GHz] 25 20 20 15 15 2 |S21| 10 10 5 5 0.50V 0 0 0 10 20 30 40 50 60 70 80 0 1 2 3 I [mA] 4 5 6 f [GHz] C Power gain Gma, Gms = ƒ (IC) Power gain Gma, Gms = ƒ (VCE) VCE = 3 V IC = 60 mA f = parameter f = parameter 28 27 0.90GHz 0.90GHz 26 24 24 1.80GHz 21 22 2.40GHz 18 1.80GHz 3.00GHz 15 2.40GHz G [dB] G [dB] 20 18 4.00GHz 5.00GHz 12 16 3.00GHz 14 4.00GHz 6.00GHz 9 5.00GHz 6 12 6.00GHz 3 10 8 0 0 10 20 30 40 50 60 70 80 0 IC [mA] 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE [V] 6 2007-04-26 Package TSLP-3-9 BFR750L3RH Package Outline Bottom view 0.4 ±0.035 1) Top view 0.6 ±0.05 0.31+0.01 -0.02 1 2 3 2 1 0.35 ±0.05 Pin 1 marking 1±0.05 3 2 x 0.25 ±0.035 1) 0.575 ±0.05 0.5 ±0.035 1) 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print 0.225 0.225 Solder mask 0.255 R0.1 0.2 0.2 0.17 0.15 Copper 0.5 0.95 0.2 0.35 1 0.45 R0.19 0.315 0.6 0.38 For board assembly information please refer to Infineon website "Packages" Stencil apertures Marking Layout (Example) BFR705L3RH Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.35 Pin 1 marking 8 1.2 4 0.8 7 2007-04-26 BFR750L3RH Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-26