BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181 Marking RFs 1=B Pin Configuration 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 Base current IB 2 Total power dissipation2) Ptot 175 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS ≤ 91 °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 3) RthJS ≤ 335 K/W 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 3For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-30 BFR181 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 5 mA, VCE = 8 V, pulse measured 2 2007-03-30 BFR181 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 6 8 - Ccb - 0.27 0.45 Cce - 0.2 - Ceb - 0.35 - GHz IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz - 0.9 - - 1.2 - G ms - 18.5 - dB G ma - 12.5 - dB IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum stable1) IC = 10 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S 21e|2 Transducer gain dB IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz - 14.5 - - 9.5 - IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz 1G ms = |S 21 / S 12| 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2G 3 2007-03-30 BFR181 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.0010519 22.403 1.7631 5.1127 1.6528 6.6315 1.8168 17.028 1.0549 1.1633 2.7449 0 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = Ω fF ps mA V ns - 96.461 0.12146 16.504 0.24951 9.9037 2.1372 0.73155 0.33814 0 0.30013 0 0 0.99768 A A Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.082903 0.75 1.11 300 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6GHz EHA07524 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com 4 2007-03-30 BFR181 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 200 mW 160 K/W RthJS Ptot 140 120 10 2 100 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 80 60 40 20 0 0 20 40 60 80 100 120 °C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2007-03-30 Package SOT23 BFR181 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2007-03-30 BFR181 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-03-30