INFINEON BFR181_07

BFR181
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
2
3
• fT = 8 GHz, F = 0.9 dB at 900 MHz
1
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR181
Marking
RFs
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
20
Base current
IB
2
Total power dissipation2)
Ptot
175
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
V
mA
TS ≤ 91 °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 3)
RthJS
≤ 335
K/W
1Pb-containing
2T
package may be available upon special request
is
measured
on the collector lead at the soldering point to the pcb
S
3For
calculation of RthJA please refer to Application Note Thermal Resistance
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2007-03-30
BFR181
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, I E = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
-
IC = 5 mA, VCE = 8 V, pulse measured
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2007-03-30
BFR181
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
6
8
-
Ccb
-
0.27
0.45
Cce
-
0.2
-
Ceb
-
0.35
-
GHz
IC = 10 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Noise figure
dB
F
IC = 2 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
-
0.9
-
-
1.2
-
G ms
-
18.5
-
dB
G ma
-
12.5
-
dB
IC = 2 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
Power gain, maximum stable1)
IC = 10 mA, VCE = 8 V, Z S = ZSopt, Z L = ZLopt ,
f = 900 MHz
Power gain, maximum available2)
IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
|S 21e|2
Transducer gain
dB
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
14.5
-
-
9.5
-
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
1G
ms = |S 21 / S 12|
1/2
ma = |S 21e / S12e| (k-(k²-1) )
2G
3
2007-03-30
BFR181
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.0010519
22.403
1.7631
5.1127
1.6528
6.6315
1.8168
17.028
1.0549
1.1633
2.7449
0
3
fA
V
V
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
Ω
fF
ps
mA
V
ns
-
96.461
0.12146
16.504
0.24951
9.9037
2.1372
0.73155
0.33814
0
0.30013
0
0
0.99768
A
A
Ω
V
deg
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.90617
12.603
0.87757
0.01195
0.69278
2.2171
0.43619
0.12571
319.69
0.082903
0.75
1.11
300
fA
fA
mA
Ω
V
fF
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
C4
C1
L2
B
Transistor
Chip
B’
C’
L3
C
E’
C6
C2
L1
C5
C3
E
LBI =
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
0.85
0.51
0.69
0.61
0
0.49
73
84
165
nH
nH
nH
nH
nH
nH
fF
fF
fF
Valid up to 6GHz
EHA07524
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
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2007-03-30
BFR181
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
200
mW
160
K/W
RthJS
Ptot
140
120
10 2
100
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
80
60
40
20
0
0
20
40
60
80
100
120 °C
10 1 -7
10
150
TS
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
Ptotmax /PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
2007-03-30
Package SOT23
BFR181
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2007-03-30
BFR181
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
7
2007-03-30