DG411L/412L/413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG411L/412L/413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411/412/413 with improved performance. • 2.7- thru 12 V Single Supply or ± 3- thru ± 6 Dual Supply • On-Resistance - rDS(on): 17 Ω • Fast Switching - tON: 19 ns - tOFF: 12 ns • TTL, CMOS Compatible • Low Leakage: 0.25 nA • 2000 V ESD Protection Using BiCMOS wafer fabrication technology allows the DG411L/412L/413L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with ± 3 to ± 6 V. Combining high speed (tON: 19 ns), flat rDS(on) over the analog signal range (5 Ω), minimal insertion lose (- 3 dB at 280 MHz), and excellent crosstalk and off-isolation performance (- 50 dB at 50 MHz), the DG411L/412L/413L are ideally suited for audio and video signal switching. The DG411L and DG412L respond to opposite control logic as shown in the Truth Table. The DG413L has two normally open and two normally closed switches. Pb-free Available RoHS* COMPLIANT BENEFITS • • • • Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacinge APPLICATIONS • • • • • • • Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG413L Dual-In-Line, TSSOP and SOIC DG411L/412L Dual-In-Line, TSSOP and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Top View TRUTH TABLE TRUTH TABLE DG411L DG412L Logic SW1, SW4 0 ON OFF 0 OFF ON 1 OFF ON 1 ON OFF Logic Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V SW2, SW3 Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71397 S-71241–Rev. E, 25-Jun-07 www.vishay.com 1 DG411L/412L/413L Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG411L/412L DG411LDY DG411LDY-E3 DG411LDY-T1 DG411LDY-T1-E3 16-Pin Narrow SOIC DG412LDY DG412LDY-E3 DG412LDY-T1 DG412LDY-T1-E3 - 40 to 85 °C DG411LDQ DG411LDQ-E3 DG411LDQ-T1 DG411LDQ-T1-E3 16-Pin TSSOP DG412LDQ DG412LDQ-E3 DG412LDQ-T1 DG412LDQ-T1-E3 DG413L 16-Pin Narrow SOIC DG413LDY DG413LDY-E3 DG413LDY-T1 DG413LDY-T1-E3 16-Pin TSSOP DG413LDQ DG413LDQ-E3 DG413LDQ-T1 DG413LDQ-T1-E3 - 40 to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter V+ to V- Limit - 0.3 to 13 GND to VVL (GND - 0.3) to (V+) + 0.3 7 - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first 30 INa, VS, VD Continuous Current (Any Terminal) Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature Power Dissipation (Packages) Unit b 100 (DQ, DY Suffix) - 65 to 125 (AK Suffix) - 65 to 150 16-Pin TSSOPc 450 16-Pin SOICd 650 16-Pin CerDIPe 900 V mA °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/°C above 75 °C d. Derate 7.6 mW/°C above 75 °C e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 71397 S-71241–Rev. E, 25-Jun-07 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (SINGLE SUPPLY 12 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 °C Tempb Typc D Suffix Limits - 40 to 85 °C Mind Maxd Mind Maxd Unit 0 12 0 12 V 30 40 Ω Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full V+ = 10.8 V, V- = 0 V IS = 10 mA, VD = 2/9 V IS(off) VD = 1/11 V, VS = 11/1 V Switch Off Leakage Current ID(off) Channel On Leakage Current Room Full 20 30 45 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 - 1.5 1.5 -1 1 ID(on) VS = VD = 11/1 V Room Full Input Current, VIN Low IIL VIN Under Test = 0.8 V Full Input Current, VIN High IIH VIN Under Test = 2.4 V Full Turn-On Time tON Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF VS = 5 V, See Figure 2 nA Digital Control 0.01 µA Dynamic Characteristics Room Full 20 50 70 50 60 Room Full 12 30 48 30 40 Break-Before-Make Time Delay tD DG413L Only, VS = 5 V RL = 300 Ω, CL = 35 pF Room 6 Charge Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 10 nF Room 5 Room 71 Room 95 Room 5 Off-Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee e RL = 50 Ω, CL = 5 pF , f = 1 MHz CS(off) CD(off) Room 6 CD(on) Room 15 Positive Supply Current I+ Room Full 0.02 Negative Supply Current I- Room Full - 0.002 IL Room Full 0.002 IGND Room Full - 0.002 Drain Off Capacitance Channel-On Capacitancee f = 1 MHz ns pC dB pF Power Supplies VIN = 0 or 5 V Logic Supply Current Ground Current 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S-71241–Rev. E, 25-Jun-07 www.vishay.com 3 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (DUAL SUPPLY ± 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 °C Tempb Typc D Suffix Limits - 40 to 85 °C Mind Maxd Mind Maxd Unit -5 5 -5 5 V 33 40 Ω Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) IS(off) Switch Off Leakage Currentg ID(off) Channel On Full V+ = 5 V, V- = - 5 V IS = 10 mA, VD = ± 3.5 V V+ = 5.5 , V- = - 5.5 V VD = ± 4.5 V, VS = ± 4.5 V Room Full 20 33 45 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 ID(on) V+ = 5.5 V, V- = - 5.5 V VS = VD = ± 4.5 V Room Full Input Current, VIN Lowe IIL VIN Under Test = 0.8 V Full 0.05 - 1.5 1.5 -1 1 Highe IIH VIN Under Test = 2.4 V Full 0.05 - 1.5 1.5 -1 1 Turn-On Timee tON Room Full 21 50 70 50 60 Turn-Off Timee tOFF RL = 300 Ω, CL = 35 pF VS = ± 3.5 V, See Figure 2 Room Full 16 35 50 35 40 tD DG413L Only, VS = 3.5 V RL = 300 Ω, CL = 35 pF Room 6 Q Vg = 0 V, Rg = 0 Ω, CL = 10 nF Room 5 Room 68 Room 85 Room 9 Room 9 CD(on) Room 20 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- Room Full - 0.002 Logic Supply Currente IL Room Full 0.002 IGND Room Full - 0.002 Leakage Currentg nA Digital Control Input Current, VIN µA Dynamic Characteristics Break-Before-Make Time Delaye Charge Injectione Off Isolation e OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee Drain Off RL = 50 Ω, CL = 5 pF , f = 1 MHz CS(off) Capacitancee CD(off) e Channel On Capacitance f = 1 MHz ns pC dB pF Power Supplies VIN = 0 or 5 V Ground Currente 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. www.vishay.com 4 Document Number: 71397 S-71241–Rev. E, 25-Jun-07 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (SINGLE SUPPLY 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 °C Tempb Typc Mind Maxd D Suffix Limits - 40 to 85 °C Mind Maxd Unit 5 5 V Ω Analog Switch Analog Signal Rangee Drain-Source On-Resistancee VANALOG rDS(on) Full V+ = 4.5 V IS = 5 mA, VD = 1 V, 3.5 V Room Full 35 50 88 50 75 Room Hot 27 50 90 50 60 Room Hot 15 30 55 30 40 Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF RL = 300 Ω, CL = 35 pF VS = 3.5 V, See Figure 2 Break-Before-Make Time Delaye tD DG413L Only, VS = 3.5 V RL = 300 Ω, CL = 35 pF Room 6 Charge Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 10 nF Room 0.5 ns pC Power Supplies Positive Supply Currente I+ Room Hot 0.02 Negative Supply Currente I- Room Hot - 0.002 Logic Supply Currente IL Room Hot 0.002 IGND Room Hot - 0.002 VIN = 0 or 5 V Ground Currente 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S-71241–Rev. E, 25-Jun-07 www.vishay.com 5 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (SINGLE SUPPLY 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VL = 3 V, VIN = 0.4 Vf A Suffix Limits - 55 to 125 °C Tempb Typc D Suffix Limits - 40 to 85 °C Mind Maxd Mind Maxd Unit 0 3 0 3 V 80 100 Ω Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) IS(off) Switch Off Leakage Currentg ID(off) Channel On Full V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V V+ = 3.3 , V- = 0 V VD = 1, 2 V, VS = 2, 1 V Room Full 65 80 115 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 -1 - 15 1 15 -1 - 10 1 10 ID(on) V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V Room Full Input Current, VIN Low IIL VIN Under Test = 0.4 V Full 0.005 - 1.5 1.5 -1 1 Input Current, VIN High IIH VIN Under Test = 2.4 V Full 0.005 - 1.5 1.5 -1 1 Turn-On Time tON Room Full 50 85 150 85 110 Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF VS = 1.5 V, See Figure 2 Room Full 30 60 100 60 85 tD DG413L Only, VS = 1.5 V RL = 300 Ω, CL = 35 pF Room 6 Q Vg = 0 V, Rg = 0 Ω, CL = 10 nF Room 1 Room 68 Room 85 Room 6 Room 6 Room 20 Leakage Currentg nA Digital Control µA Dynamic Characteristics Break-Before-Make Time Delay Charge Injectione Off Isolation e OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) e Channel On Capacitance CD(on) RL = 50 Ω, CL = 5 pF , f = 1 MHz f = 1 MHz ns pC dB pF Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 6 Document Number: 71397 S-71241–Rev. E, 25-Jun-07 DG411L/412L/413L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 50 80 r DS(on) – On-Resistance (Ω) r DS(on) – On-Resistance (Ω) V+ = 5 V V- = 0 V VCC = 2.7 V 60 40 VCC = 4.5 V VCC = 12 V 20 0 40 A B 30 C D 20 A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 10 0 0 3 6 9 12 0 1 2 Drain Voltage (V) 4 5 rDS(on) vs. Drain Voltage and Temperature (Single Supply) 35 0.30 V+ = 5 V V- = 0 V V± = ± 5 V 0.25 28 Supply Current (nA) r DS(on) – On-Resistance (Ω) 3 Drain Voltage (V) rDS(on) vs. Drain Voltage (Single Supply) 21 14 A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 7 -5 -3 0.20 0.15 0.10 0.05 0 -1 1 3 0.00 - 50 5 - 25 0 Drain Voltage (V) 25 50 75 100 125 150 Temperature (°C) rDS(on) vs. Drain Voltage and Temperature (Dual Supply) Supply Current vs. Temperature 30 50 V+ = 5 V V- = - 5 V 20 40 Switching Speed (nS) I S , I D Leakage Current (pA) E 10 ID(on) 0 ID(off) IS(off) - 10 tON 30 20 tOFF 10 - 20 - 30 0 -5 -3 -1 1 3 5 VD or V S – Drain-Source Voltage Leakage Current vs. Analog Voltage (Dual Supply) Document Number: 71397 S-71241–Rev. E, 25-Jun-07 0 3 6 9 12 15 V+ – Positive Supply Voltage (V) Switching Time vs. Single Supply www.vishay.com 7 DG411L/412L/413L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 6 4 tON tOFF 27 Charge Injection (Q) Switching Speed (nS) 36 18 VSUPPLY = ± 5 V 2 VSUPPLY = 3 V 0 9 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 - 2 - 5 6.5 - 3 - 1 V± Positive Supply Voltage (V) 3 5 Charge Injection vs. Drain Voltage 1.8 7 1.5 6 Capacitance (pF) V TH - Threshold (V) Switching Time vs. Dual Supply 1.2 0.9 0.6 CD(off) at VCC = 5 V CD(off) at VCC = 12 V 5 CD(off) at VCC = 3 V 4 3 2 0.3 1 0.0 0 0 2 4 6 8 10 12 14 0 3 V ± Positive Supply Voltage (V) 6 9 12 VD – Drain Voltage (V) Input Threshold vs. Single Supply Voltage Drain Capacitance vs. Drain Voltage (Single Supply) 25 10 VSUPPLY = ± 5 V CD(on) - 10 20 - 30 Loss (dB) Capacitance (pF) 1 Drain Voltage (V) 15 - 50 V+ = 3 V V- = 0 V RL = 50 Ω Insertion Loss - 3 dB = 280 MHz Off Isolation 10 - 70 Crosstalk CS/CD(off) 5 - 90 0 -5 - 110 -3 -1 1 3 Analog Voltage (V) Capacitance vs. Analog Signal (Dual Supply) www.vishay.com 8 5 0.1 1 10 100 1000 Frequency (MHz) Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply) Document Number: 71397 S-71241–Rev. E, 25-Jun-07 DG411L/412L/413L Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS VL V+ Logic Input tr < 20 ns tf < 20 ns 3V 50% 0V VL VS V+ S tON D Switch Input* VO VS VO 90 % IN RL 300 Ω V- GND CL 35 pF Switch Output Switch Input* V- 0V tON 90 % VO - VS CL (includes fixture and stray capacitance) RL VO = V S Note: RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time VL V+ Logic Input VS1 S1 D1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 50 % 0V VS1 VO1 VO1 IN1 3V RL2 300 Ω CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V 90 % tD tD VCL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413L) Document Number: 71397 S-71241–Rev. E, 25-Jun-07 www.vishay.com 9 DG411L/412L/413L Vishay Siliconix TEST CIRCUITS VL ΔVO V+ VO VL Rg V+ S INX D IN Vg OFF VO ON OFF CL 10 nF 3V GND VINX V- OFF ON Q = ΔVO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. Figure 4. Charge Injection VL V+ C C VL V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VS VO V- C = RF bypass Figure 5. Crosstalk VL V+ C VL C VO D VL Rg = 50 Ω 0 V, 2.4 V V+ C V+ S VS VL C V+ S RL 50 Ω IN Meter IN GND V- HP4192A Impedance Analyzer or Equivalent C 0 V, 2.4 V D VOff Isolation = 20 log GND V- C VS VO C = RF Bypass Figure 6. Off-Isolation V- Figure 7. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71397. www.vishay.com 10 Document Number: 71397 S-71241–Rev. E, 25-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1