BZV55 series Voltage regulator diodes Rev. 04 — 19 July 2007 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features n Non-repetitive peak reverse power dissipation: ≤ 40 W n Total power dissipation: ≤ 500 mW n Two tolerance series: ±2 % and ±5 % n Wide working voltage range: nominal 2.4 V to 75 V (E24 range) n Low differential resistance n Small hermetically sealed glass SMD package 1.3 Applications n General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA - - 0.9 V PZSM non-repetitive peak reverse power dissipation - - 40 W [1] [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge 2. Pinning information Table 2. Pin Pinning Description 1 cathode 2 anode Simplified outline Symbol [1] k a 1 2 006aaa152 [1] The marking band indicates the cathode. BZV55 series NXP Semiconductors Voltage regulator diodes 3. Ordering information Table 3. Ordering information Type number BZV55-B2V4 to BZV55-C75[1] [1] Package Name Description Version - hermetically sealed glass surface-mounted package; 2 connectors SOD80C The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code[1] BZV55-B2V4 to BZV55-C75 marking band [1] blue: made in China yellow: made in Philippines 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IF forward current Min Max Unit mA - 250 - see Table 8 and 9 IZSM non-repetitive peak reverse current [1] PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation Tamb ≤ 50 °C [2] - 400 mW Ttp ≤ 50 °C [2] - 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge [2] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-t) thermal resistance from junction to tie-point [1] Min Typ Max Unit - - 380 K/W - - 300 K/W Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. BZV55_SER_4 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 2 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes 006aab072 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 10 0.02 0.01 ≤ 0.001 1 10−1 1 102 10 103 104 105 tp (ms) Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA - - 0.9 V IR reverse current BZV55-B/C2V4 VR = 1 V - - 50 µA BZV55-B/C2V7 VR = 1 V - - 20 µA BZV55-B/C3V0 VR = 1 V - - 10 µA BZV55-B/C3V3 VR = 1 V - - 5 µA BZV55-B/C3V6 VR = 1 V - - 5 µA BZV55-B/C3V9 VR = 1 V - - 3 µA BZV55-B/C4V3 VR = 1 V - - 3 µA BZV55-B/C4V7 VR = 2 V - - 3 µA BZV55-B/C5V1 VR = 2 V - - 2 µA BZV55-B/C5V6 VR = 2 V - - 1 µA BZV55-B/C6V2 VR = 4 V - - 3 µA BZV55-B/C6V8 VR = 4 V - - 2 µA BZV55-B/C7V5 VR = 5 V - - 1 µA BZV55-B/C8V2 VR = 5 V - - 700 nA BZV55-B/C9V1 VR = 6 V - - 500 nA BZV55-B/C10 VR = 7 V - - 200 nA BZV55-B/C11 VR = 8 V - - 100 nA BZV55-B/C12 VR = 8 V - - 100 nA BZV55-B/C13 VR = 8 V - - 100 nA BZV55-B/C15 to BZV55-B/C75 VR = 0.7VZ(nom) - - 50 nA BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 3 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 Tj = 25 °C unless otherwise specified. BZV55-x Sel xx Working voltage Differential resistance rdif (Ω) VZ (V) Temperature coefficient Diode capacitance SZ (mV/K) Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA Min Max Typ Max Typ Max Min Typ Max Max Max B 2.35 2.45 275 600 70 100 −3.5 −1.6 0 450 6.0 C 2.2 2.6 300 600 75 100 −3.5 −2.0 0 450 6.0 325 600 80 95 −3.5 −2.1 0 450 6.0 350 600 85 95 −3.5 −2.4 0 450 6.0 375 600 85 90 −3.5 −2.4 0 450 6.0 400 600 85 90 −3.5 −2.5 0 450 6.0 410 600 80 90 −3.5 −2.5 0 450 6.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 400 480 40 60 −2.7 −0.8 1.2 300 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 40 150 6 10 0.4 2.3 3.7 200 6.0 30 80 6 15 1.2 3.0 4.5 200 6.0 30 80 6 15 2.5 4.0 5.3 150 4.0 40 80 6 15 3.2 4.6 6.2 150 4.0 40 100 6 15 3.8 5.5 7.0 150 3.0 50 150 8 20 4.5 6.4 8.0 90 3.0 50 150 10 20 5.4 7.4 9.0 85 2.5 50 150 10 25 6.0 8.4 10.0 85 2.5 B 2.65 2.75 C 2.5 2.9 B 2.94 3.06 C 2.8 3.2 B 3.23 3.37 C 3.1 3.5 B 3.53 3.67 C 3.4 3.8 B 3.82 3.98 C 3.7 4.1 B 4.21 4.39 C 4.0 4.6 B 4.61 4.79 C 4.4 5.0 B 5.0 5.2 C 4.8 5.4 B 5.49 5.71 C 5.2 6.0 B 6.08 6.32 C 5.8 6.6 B 6.66 6.94 C 6.4 7.2 B 7.35 7.65 C 7.0 7.9 B 8.04 8.36 C 7.7 8.7 B 8.92 9.28 C 8.5 9.6 B 9.8 10.2 C 9.4 10.6 B 10.8 11.2 C 10.4 11.6 B 11.8 12.2 C 11.4 12.7 BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 4 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued Tj = 25 °C unless otherwise specified. BZV55-x Sel xx Working voltage Differential resistance rdif (Ω) VZ (V) Temperature coefficient Diode capacitance SZ (mV/K) Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] 13 15 16 18 20 22 24 IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA Min Max Typ Max Typ Max Min Typ Max Max Max B 12.7 13.3 50 170 10 30 7.0 9.4 11.0 80 2.5 C 12.4 14.1 B 14.7 15.3 50 200 10 30 9.2 11.4 13.0 75 2.0 C 13.8 15.6 B 15.7 16.3 50 200 10 40 10.4 12.4 14.0 75 1.5 C 15.3 17.1 B 17.6 18.4 50 225 10 45 12.4 14.4 16.0 70 1.5 C 16.8 19.1 B 19.6 20.4 60 225 15 55 12.3 15.6 18.0 60 1.5 C 18.8 21.2 B 21.6 22.4 60 250 20 55 14.1 17.6 20.0 60 1.25 C 20.8 23.3 B 23.5 24.5 60 250 25 70 15.9 19.6 22.0 55 1.25 C 22.8 25.6 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 5 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes Table 9. Characteristics per type; BZV55-B27 to BZV55-C75 Tj = 25 °C unless otherwise specified. BZV55-x Sel xx Working voltage Differential resistance rdif (Ω) VZ (V) Temperature coefficient Diode capacitance SZ (mV/K) Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] 27 30 33 36 39 43 47 51 56 62 68 75 IZ = 2 mA IZ = 0.5 mA IZ = 2 mA IZ = 2 mA Min Max Typ Max Typ Max Min Typ Max Max Max B 26.5 27.5 65 300 25 80 18.0 22.7 25.3 50 1.0 C 25.1 28.9 B 29.4 30.6 70 300 30 80 20.6 25.7 29.4 50 1.0 C 28.0 32.0 B 32.3 33.7 75 325 35 80 23.3 28.7 33.4 45 0.9 C 31.0 35.0 B 35.3 36.7 80 350 35 90 26.0 31.8 37.4 45 0.8 C 34.0 38.0 B 38.2 39.8 80 350 40 130 28.7 34.8 41.2 45 0.7 C 37.0 41.0 B 42.1 43.9 85 375 45 150 31.4 38.8 46.6 40 0.6 C 40.0 46.0 B 46.1 47.9 85 375 50 170 35.0 42.9 51.8 40 0.5 C 44.0 50.0 B 50.0 52.0 90 400 60 180 38.6 46.9 57.2 40 0.4 C 48.0 54.0 B 54.9 57.1 100 425 70 200 42.2 52.0 63.8 40 0.3 C 52.0 60.0 B 60.8 63.2 120 450 80 215 58.8 64.4 71.6 35 0.3 C 58.0 66.0 B 66.6 69.4 150 475 90 240 65.6 71.7 79.8 35 0.25 C 64.0 72.0 B 73.5 76.5 170 500 95 255 73.4 80.2 88.6 35 0.2 C 70.0 79.0 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 6 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes mbg801 103 mbg781 300 PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 10 tp (ms) 0 0.6 0.8 1 VF (V) (1) Tj = 25 °C (prior to surge) Tj = 25 °C (2) Tj = 150 °C (prior to surge) Fig 2. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mbg783 0 Fig 3. Forward current as a function of forward voltage; typical values mbg782 10 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 −5 0 20 40 IZ (mA) 60 0 4 8 12 BZV55-B/C2V4 to BZV55-B/C4V3 BZV55-B/C4V7 to BZV55-B/C12 Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C Fig 4. Temperature coefficient as a function of working current; typical values IZ (mA) 20 Fig 5. Temperature coefficient as a function of working current; typical values BZV55_SER_4 Product data sheet 16 © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 7 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes 8. Package outline Hermetically sealed glass surface-mounted package; 2 connectors k SOD80C a (1) D L L H DIMENSIONS (mm are the original dimensions) 0 UNIT D H L mm 1.60 1.45 3.7 3.3 0.3 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD80C 100H01 JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-01-26 06-03-16 Fig 6. Package outline SOD80C 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BZV55-B2V4 to BZV55-C75 [1] Package SOD80C Description 4 mm pitch, 8 mm tape and reel 2500 10000 -115 -135 For further information and the availability of packing methods, see Section 13. BZV55_SER_4 Product data sheet Packing quantity © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 8 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes 10. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) sod080c Fig 7. Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks Dimensions in mm sod080c Fig 8. Wave soldering footprint SOD80C BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 9 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BZV55_SER_4 20070719 Product data sheet CPCN200508022F BZV55_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 4 “Marking”: enhanced as per CPCN200508022F Table 5: IF continuous forward current redefined to forward current Table 6: Rth(j-tp) thermal resistance from junction to tie-point redefined to Rth(j-t) Figure 1: amended Section 9 “Packing information”: added Section 12 “Legal information”: updated BZV55_3 20020228 Product specification - BZV55_2 BZV55_2 19990521 Product specification - BZV55_1 BZV55_1 19960426 Product specification - - BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 10 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BZV55_SER_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 — 19 July 2007 11 of 12 BZV55 series NXP Semiconductors Voltage regulator diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 July 2007 Document identifier: BZV55_SER_4