DISCRETE SEMICONDUCTORS DATA SHEET BF570 NPN medium frequency transistor Product data sheet Supersedes data of 2004 Jan 13 2004 Mar 15 NXP Semiconductors Product data sheet NPN medium frequency transistor BF570 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 15 V) 1 base • Low feedback capacitance (max. 2.2 pF). 2 emitter 3 collector APPLICATIONS • Monitors • Battery equipped applications. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. 1 MARKING TYPE NUMBER 1 MARKING CODE(1) BF570 61* or B26 2 2 Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BF570 PACKAGE NAME − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V ICM peak collector current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW hFE DC current gain IC = 10 mA; VCE = 1 V 40 − fT transition frequency IC = 40 mA; VCE = 10 V; f = 100 MHz 490 − 2004 Mar 15 2 MHz NXP Semiconductors Product data sheet NPN medium frequency transistor BF570 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 4.5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient VALUE UNIT 500 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0 A; VCB = 20 V − − 400 nA IE = 0 A; VCB = 20 V; Tj = 125 °C − − 30 µA IC = 0 A; VEB = 2 V − − 100 nA DC current gain IC = 10 mA; VCE = 1 V 40 − − Cre feedback capacitance IC = 0 A; VCE = 10 V; f = 1 MHz − 1.6 2.2 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 500 − − MHz IC = 40 mA; VCE = 10 V; f = 100 MHz 490 − − MHz ICBO collector cut-off current IEBO emitter cut-off current hFE 2004 Mar 15 3 NXP Semiconductors Product data sheet NPN medium frequency transistor BF570 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Mar 15 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 4 NXP Semiconductors Product data sheet NPN medium frequency transistor BF570 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Mar 15 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp6 Date of release: 2004 Mar 15 Document order number: 9397 750 12914