DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF199 NPN medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium frequency transistor BF199 FEATURES PINNING • Low current (max. 25 mA) PIN • Low voltage (max. 25 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Output stage of a vision IF amplifier. DESCRIPTION handbook, halfpage1 NPN medium frequency transistor in a TO-92; SOT54 plastic package. 3 2 3 1 2 MAM258 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 40 V VCEO collector-emitter voltage open base − − 25 V ICM peak collector current − − 25 mA Ptot total power dissipation Tamb ≤ 25 °C − − 500 mW hFE DC current gain VCE = 10 V; IC = 7 mA 38 − − fT transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz − 550 − MHz ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF199 2004 Nov 08 SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads 2 VERSION SOT54 NXP Semiconductors Product data sheet NPN medium frequency transistor BF199 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 25 mA ICM peak collector current − 25 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 40 V; IE = 0 A − − 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 10 V; IC = 7 mA 38 − − VBE base-emitter voltage VCE = 10 V; IC = 7 mA − 775 925 mV Cre feedback capacitance VCB = 10 V; IC = 0 A; f = 1 MHz − − 0.5 pF fT transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz − 550 − MHz 2004 Nov 08 3 NXP Semiconductors Product data sheet NPN medium frequency transistor BF199 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 4 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet NPN medium frequency transistor BF199 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Nov 08 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp6 Date of release: 2004 Nov 08 Document order number: 9397 750 13577