DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PLVA2600A series Low-voltage avalanche regulator double diodes Product specification Supersedes data of 1996 May 06 1999 May 10 Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes FEATURES PLVA2600A series MARKING • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series MARKING CODE(1) TYPE NUMBER PLVA2650A ∗9J • Hard breakdown knee PLVA2653A ∗9K • Low noise: approximately 1⁄10 of conventional series PLVA2656A ∗9L PLVA2659A ∗9M • Total power dissipation: max. 250 mW PLVA2662A ∗9N PLVA2665A ∗9O • Small tolerances of VZ PLVA2668A ∗9P • Working voltage range: nom. 5.0 to 6.8 V • Non-repetitive peak reverse power dissipation: max. 30 W. Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING APPLICATIONS • Low current, low power, low noise applications PIN DESCRIPTION 1 cathode (k1) • CMOS RAM back-up circuits 2 cathode (k2) • Voltage stabilizers 3 common anode • Voltage limiters • Smoke detector relays. DESCRIPTION 2 The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A. 1 2 1 3 3 Top view MAM245 Fig.1 Simplified outline (SOT23) and symbol. 1999 May 10 2 Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes PLVA2600A series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZRM repetitive peak working current tp = 100 µs; δ = 10% − 250 mA PZSM non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C − 30 W Ptot total power dissipation single diode loaded; Tamb = 25 °C; note 1 − 250 mW double diode loaded; Tamb = 25 °C; note 1 − 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed circuit-board. 1999 May 10 3 Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes PLVA2600A series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V PLVA2650A 4.80 5.00 5.20 V PLVA2653A 5.10 5.30 5.50 V PLVA2656A 5.40 5.60 5.80 V PLVA2659A 5.70 5.90 6.10 V PLVA2662A 6.00 6.20 6.40 V PLVA2665A 6.30 6.50 6.70 V PLVA2668A 6.60 6.80 7.00 V PLVA2650A − 4.30 − V PLVA2653A − 5.20 − V PLVA2656A − 5.51 − V PLVA2659A − 5.85 − V PLVA2662A − 6.19 − V PLVA2665A − 6.49 − V PLVA2668A − 6.80 − V − − 700 Ω − − 250 Ω − − 100 Ω PLVA2650A − 0.20 − mV/K PLVA2653A − 1.60 − mV/K PLVA2656A − 1.90 − mV/K PLVA2659A − 2.40 − mV/K PLVA2662A − 2.65 − mV/K PLVA2665A − 2.90 − mV/K PLVA2668A − 3.40 − mV/K VZ working voltage IZ = 250 µA working voltage dynamic resistance PLVA2650A IZ = 10 µA 1 kHz superimposed; IZAC is 10% of IZDC; IZ = 250 µA PLVA2653A PLVA2656A to PLVA2668A 1999 May 10 UNIT 0.9 IF = 10 mA IR MAX. − forward voltage SZ TYP. − VF RZ MIN. temperature coefficient reverse current IZ = 250 µA VR = 80%; VZ nominal PLVA2650A − − 20000 nA PLVA2653A − − 5000 nA PLVA2656A − − 1000 nA PLVA2659A − − 500 nA PLVA2662A − − 100 nA PLVA2665A − − 50 nA PLVA2668A − − 10 nA 4 Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes SYMBOL IR PARAMETER reverse current Vn CONDITIONS MIN. TYP. MAX. UNIT VR = 50%; VZ nominal PLVA2650A − 34 − nA PLVA2653A − 22 − nA PLVA2656A − 1.1 − nA PLVA2659A − 0.9 − nA PLVA2662A − 0.9 − nA PLVA2665A − 0.9 − nA PLVA2668A − 0.8 − nA PLVA2650A − 21 − µA PLVA2653A − 3.5 − µA reverse current ∆VZ PLVA2600A series VR = 90%; VZ nominal PLVA2656A − 1.3 − µA PLVA2659A − 1.0 − µA PLVA2662A − 0.05 − µA PLVA2665A − 0.04 − µA PLVA2668A − 0.006 − µA PLVA2659A to PLVA2668A ILO = 10 µA; IHi = 1 mA − − 0.1 V PLVA2656A ILO = 50 µA; IHi = 1 mA − − 0.1 V PLVA2650A ILO = 100 µA; IHi = 1 mA − − 0.4 V PLVA2653A ILO = 100 µA; IHi = 1 mA − − 0.2 V f = 1 kHz; B = 1 kHz; IZ = 250 µA − − 1.0 µV -----------Hz line regulation noise voltage density THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed circuit-board. 1999 May 10 5 VALUE UNIT 360 K/W 500 K/W Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes PLVA2600A series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 10 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes PLVA2600A series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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