Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) VBE = 0 V tf Fall time 7 6 285 170 1500 800 10 25 45 3.0 400 230 V V A A W V A A ns ns PINNING - SOT199 PIN Ths ≤ 25 ˚C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz ICsat = 7 A; f = 16 kHz ICsat = 6 A; f = 64 kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 10 25 6 9 6 45 150 150 V V A A A A A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. December 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 - 1.0 - mA V V 0.85 4.2 0.94 10 5.8 3.0 1.03 7.3 V V TYP. MAX. UNIT 3.5 285 4.3 400 µs ns 2.3 170 2.7 230 µs ns STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 7 A; IB = 1.75 A IC = 7 A; IB = 1.75 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ts tf Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A; (IB2 = -3.5 A) ts tf Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time f = 64 kHz; ICsat = 6 A; IB1 = 1.2 A; (IB2 = -3.6 A) 2 Measured with half sine-wave voltage (curve tracer). December 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF ICsat TRANSISTOR + 50v IC 100-200R DIODE t IB Horizontal IB1 t Oscilloscope 5 us IB2 6.5 us Vertical 16 us 1R 100R VCE 6V 30-60 Hz t Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (64 kHz). IC / mA ICsat 90 % IC 250 10 % 200 tf t ts IB IB1 100 t 0 VCE / V min VCEOsust - IB2 Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times definitions. ICsat + 150 v nominal adjust for ICsat DIODE t Lc IB1 IB t 20us 26us IB2 IBend 64us VCE LB T.U.T. Cfb -VBB t Fig.6. Switching times test circuit. Fig.3. Switching times waveforms (16 kHz). December 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 hFE BU4522AF VBEsat \ V BU4522AF/X 1.3 Ths = 25 C Ths = 85 C VCE = 1 V Ths = 25 C Ths = 85 C 1.2 1.1 IC = 7 A 1 10 0.9 IC = 6 A 0.8 0.7 1 0.01 0.1 1 10 0.6 IC / A 100 Fig.7. High and low DC current gain. 1 2 3 IB / A 4 Fig.10. Typical base-emitter saturation voltage. BU4522AF/X 5 100 Ths = 25 C Ths = 85 C VCE = 5 V 0 ts/tf/ us BU4522AF/X 16kHz ICsat = 7 A Ths = 85 C Freq = 16 kHz 4 hFE 3 10 2 1 0 1 0.01 0.1 IC / A1 10 100 Fig.8. High and low DC current gain. 10 0.5 1 1.5 IBend / A 2 Fig.11. Typical collector storage and fall time. IC =7 A; Tj = 85˚C; f = 16kHz ts/tf/ us BU4522AF/X VCEsat (V) 0 BU4522AF/X 64kHz 5 Ths = 25 C Ths = 85 C ICsat = 6 A Ths = 85 C Freq = 64 kHz 4 1 3 2 IC/IB = 5 0.1 1 0.01 0.1 1 10 IC / A 0 100 0.5 1 1.5 IB / A 2 Fig.12. Typical collector storage and fall time. IC = 6 A; Tj = 85˚C; f = 64 kHz Fig.9. Typical collector-emitter saturation voltage. December 1997 0 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 120 BU4522AF Normalised Power Derating PD% BU2522AF IC / A 30 with heatsink compound 110 100 90 80 70 20 60 50 40 10 30 20 10 0 0 20 40 60 80 Ths / C 100 120 0 140 0 500 1000 1500 VCE / V Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C BU4522AF Zth / (K/W) 10 10 Ic(sat) (A) 9 0.5 8 0.2 7 1 0.1 6 0.05 5 0.1 0.02 4 tp PD 0.01 T 0 0.001 1.0E-07 D= 1.0E-05 1.0E-03 3 tp T 2 1 t 1.0E-01 0 1.0E-01 t/s Fig.14. Transient thermal impedance. 0 10 20 40 50 60 70 30 Horizontal frequency (kHz) 80 90 100 Fig.17. ICsat during normal running vs. frequency of operation for optimum performance VCC LC VCL IBend LB T.U.T. -VBB CFB Fig.15. Test Circuit RBSOA. December 1997 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.18. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1997 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 7 Rev 1.000