Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time VBE = 0 V 5.5 0.15 1500 800 11 29 45 5.0 2.2 0.3 V V A A W V A V µs PINNING - SOT399 PIN PIN CONFIGURATION DESCRIPTION 1 base 2 collector 3 emitter Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.1 A f = 64 kHz IF = 5.5 A ICsat = 5.5 A; f = 64 kHz case isolated SYMBOL case c b Rbe e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 11 29 7 10 175 7 45 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 80 7.5 800 130 13.5 - 170 - mA V V - 46 12 7.5 - 5.0 1.0 10.8 2.2 Ω V V TYP. MAX. UNIT 1.5 0.15 2 0.3 µs µs IF = 5.5 A; dIF/dt = 50 A/µs 16.5 - V VF = 5 V 375 - ns STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Rbe VCEsat VBEsat hFE hFE VF Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6.0 V; IC = 0 A IB = 600 mA IB = 0 A; IC = 100 mA; L = 25 mH VEB = 7.5 V IC = 5.5 A; IB = 1.1 A IC = 5.5 A; IB = 1.1 A IC = 1.0 A; VCE = 5 V IC = 5.5 A; VCE = 5 V IF = 5.5 A 5 - V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Switching times (64 kHz line deflection circuit) ICsat = 5.5 A; LC = 200 µH; Cfb = 4 nF; VCC = 145 V; IB(end) = 0.56 A; LB = 0.4 µH; -VBB = -4 V; -IBM = 3.3 A ts tf Turn-off storage time Turn-off fall time Vfr Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time tfr 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU2523DX + 150 v nominal adjust for ICsat DIODE t Lc IB I B end t 5 us D.U.T. 6.5 us LB IBend Cfb 16 us VCE -VBB Rbe t Fig.1. Switching times waveforms. Fig.4. Switching times test circuit. ICsat hFE BU2523DF/X 100 90 % VCE = 1 V Ths = 25 C Ths = 85 C IC 10 % tf 10 t ts IB IBend t 1 0.01 - IBM Fig.2. Switching times definitions. I I F 0.1 1 10 IC / A 100 Fig.5. High and low DC current gain. hFE = f (IC) VCE = 1 V hFE BU2523DF/X 100 F VCE = 5 V Ths = 25 C Ths = 85 C 10% time t fr V 10 F V 5V V fr F 1 0.01 time 1 10 IC / A 100 Fig.6. High and low DC current gain. hFE = f (IC) VCE = 5 V Fig.3. Definition of anti-parallel diode Vfr and tfr. September 1997 0.1 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor VCEsat / V 10 BU2523DX BU2523DF/X ts/tf / us BU2523AF/DF/AX/DX 5 Ths = 25 C Ths = 85 C 4 1 3 IC/IB = 10 2 IC/IB = 5 0.1 1 0.01 0.1 1 10 IC / A 0 100 BU2523DF/X 1 1.5 2 IB / A Normalised Power Derating PD% 120 1.2 with heatsink compound 110 Ths = 25 C Ths = 85 C 1.1 0.5 Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB VBEsat / V 0 100 90 IC = 6 A 80 70 1 60 0.9 50 40 0.8 30 IC = 4.5 A 20 0.7 10 0 0.6 0 1 2 3 IB / A 0 4 Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC PTOT / W 20 40 60 80 Ths / C 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) BU2523AF/DF/AX/DX 10 100 Ths = 25 C Ths = 85 C 1 0.1 10 Zth / (K/W) BU2525AF 0.5 0.2 0.1 0.05 0.02 PD 0.01 1 100 0 0.5 1 IB / A 1.5 D=0 0.001 1E-06 2 D= t T 1E-04 1E-02 t/s tp T 1E+00 Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.9. Typical losses. PTOT = f (IB); IC = 5.5 A; f = 64 kHz September 1997 tp 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX VCC BU2523AF/AX Ic(sat) (A) 8 7 6 LC 5 4 VCL IBend 3 LB 2 CFB T.U.T. -VBB 1 0 10 20 30 40 50 60 70 80 frequency (kHz) Fig.13. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH; CFB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 A IC / A 30 0 Fig.15. ICsat during normal running vs. frequency of operation for optimum performance BU2523 20 Area where fails occur 10 0 100 1000 1500 VCE / V Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax September 1997 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 0.95 max 5.45 5.45 3.3 Fig.16. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.200