INFINEON BCX12

NPN Silicon AF Switching Transistor
BCX 12
For general AF applications
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary type: BCX 13 (PNP)
●
2
3
1
Type
Marking
Ordering Code
Pin Configuration
1
2
3
Package1)
BCX 12
BCX 12
Q62702-C25
C
TO-92
B
E
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
125
V
Collector-base voltage
VCB0
125
Emitter-base voltage
VEB0
5
Collector current
IC
800
mA
Peak collector current
ICM
1
A
Base current
IB
100
mA
Peak base current
IBM
200
Total power dissipation, TC = 66 ˚C
Ptot
625
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient
Rth JA
≤
200
Junction - case2)
Rth JC
≤
135
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BCX 12
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CE0
125
–
–
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
V(BR)CB0
125
–
–
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBS
5
–
–
Collector-base cutoff current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 150 ˚C
ICB0
–
–
–
–
100
10
nA
µA
Emitter cutoff current
VEB = 4 V
IEB0
–
–
100
nA
DC current gain1)
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
hFE
25
50
63
40
–
–
–
–
–
–
–
–
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
–
–
1.0
Base-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VBEsat
–
–
1.6
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
–
100
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
10
–
pF
–
V
AC characteristics
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BCX 12
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE)
VC = 1 V
Collector cutoff current ICB0 = f (TA)
VCB = VCBmax
Semiconductor Group
3
BCX 12
DC current gain hFE = f (IC)
VCE = 1 V
Transition frequency fT = f (IC)
f = 20 MHz, VCE = 5 V, TA = 25 ˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
Semiconductor Group
4