Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time VBE = 0 V PINNING - SOT199 PIN Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.5 A ICsat = 4.5 A; f = 16kHz PIN CONFIGURATION TYP. MAX. UNIT 4.5 1.6 0.7 1500 700 8 15 34 1.0 2.0 - V V A A W V A V µs SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 700 8 15 4 6 34 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W July 1998 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 700 - - V 6 - 13 1.6 1.0 1.1 30 2.0 V V TYP. MAX. UNIT 7 - MHz 125 - pF 6.5 0.7 - µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER ICES ICES VCEOsust VCEsat VBEsat hFE VF Collector cut-off current CONDITIONS 1 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2.0 A DC current gain IC = 100 mA; VCE = 5 V Diode forward voltage IF = 4.5 A V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS fT Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V CC ts tf Collector capacitance at f = 1MHz VCB = 10 V Switching times (16 kHz line deflection circuit) ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V; -IBM = 2.25 A Turn-off storage time Turn-off fall time 1 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU508DF + 150 v nominal adjust for ICsat DIODE t 1mH IBend IB t 20us 26us D.U.T. 64us LB IBend 12nF VCE -VBB t Fig.1. Switching times waveforms. Fig.3. Switching times test circuit ICsat 90 % IC 100 h FE BU508AD 10 % tf t ts IB IBend 10 t 1 0.1 - IBM Fig.2. Switching times definitions. July 1998 1 IC/A 10 Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AD VCESAT / V 1 BU508DF BU508AD VCESAT/V 10 0.9 0.8 0.7 0.6 0.5 1 IC = 6A 0.4 0.3 0.2 IC = 4.5A 0.1 IC = 3A 0 0.1 1 IC / A 0.1 0.1 10 Fig.5. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 1.4 10 IB/A Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC BU508AD VBESAT / V 1 120 Normalised Power Derating PD% with heatsink compound 110 100 90 1.2 80 70 IC = 6A 60 1 50 IC = 4.5A 40 IC = 3A 30 0.8 20 10 0 0.6 0 0 1 2 3 IB / A 4 Fig.6. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC July 1998 20 40 60 80 Ths / C 100 120 140 Fig.8. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor 10 Zth K/W BU508DF bu508ax 100 IC / A 0.5 1 = 0.01 0.2 0.1 0.1 ICM max 0.05 PD 0.01 tp D= 0 1.0E-05 1E-03 II tp T 10 us t T 0.001 1.0E-07 tp = IC max 10 0.02 Ptot max 1.0E-01 1.0E+1 1 t/s 100 us Fig.9. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T 100 1 ms I IC / A 0.1 10 ms DC = 0.01 ICM max tp = 0.01 IC max 10 II 1 10 us 10 1000 100 VCE / V Fig.11. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. Ptot max 1 NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 100 us 1 ms I 0.1 10 ms DC 0.01 1 10 1000 100 VCE / V Fig.10. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. July 1998 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 6 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Rev 1.200