PHILIPS BC857BF

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
BC856F; BC857F; BC858F series
PNP general purpose transistors
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 21
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
PINNING
FEATURES
• Power dissipation comparable to SOT23
PIN
DESCRIPTION
• Low current (max. 100 mA)
1
base
• Low voltage (max. 65 V).
2
emitter
3
collector
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.
handbook, halfpage
1
MARKING
CODE
TYPE
NUMBER
3A
BC857CF
BC856BF
3B
BC858AF
3J
BC857AF
3E
BC858BF
3K
BC857BF
3F
BC858CF
3L
1999 May 21
Top view
MARKING
CODE
BC856AF
3
1
MARKING
TYPE
NUMBER
3
2
2
MAM411
3G
Fig.1
2
Simplified outline (SC-89; SOT490) and
symbol.
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BC856AF; BC856BF
−
−80
V
BC857AF; BC857BF; BC857CF
−
−50
V
−
−30
V
BC856AF; BC856BF
−
−65
BC857AF; BC857BF; BC857CF
−
−45
BC858AF; BC858BF; BC858CF
−
−30
−
−5
V
BC858AF; BC858BF; BC858CF
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −30 V
MIN.
−
MAX.
−15
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V; Tj = 150 °C
−
−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−100
nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V
BC856AF; BC857AF; BC858AF
125
250
BC856BF; BC857BF; BC858BF
220
475
BC857CF; BC858CF
420
800
IC = −10 mA; IB = −0.5 mA
−
−200
mV
IC = −100 mA; IB = −5 mA; note 1
−
−400
mV
IC = −2 mA; VCE = −5 V
−600
−750
mV
IC = −10 mA; VCE = −5 V
−
−820
mV
VCEsat
collector-emitter saturation voltage
VBE
base-emitter voltage
nA
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
2.5
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
100
−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 220 Hz
−
10
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 May 21
4
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
E
B
A
X
HE
v M A
3
A
1
c
2
e1
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
v
w
mm
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.0
0.5
1.7
1.5
0.5
0.3
0.1
0.1
OUTLINE
VERSION
SOT490
1999 May 21
REFERENCES
IEC
JEDEC
EIAJ
SC-89
5
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
1999 May 21
6
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
NOTES
1999 May 21
7
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© Philips Electronics N.V. 1999
SCA 65
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 May 21
Document order number:
9397 750 05848