DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PA1774 PNP general purpose transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Jun 01 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification in communication, electronic data processing (EDP) and consumer applications. handbook, halfpage 3 3 DESCRIPTION 1 PNP transistor in an SC-75 plastic package. NPN complement: 2PC4617. 1 2 2 Top view MAM362 MARKING TYPE NUMBER MARKING CODE 2PA1774Q YQ 2PA1774R YR 2PA1774S YS Fig.1 Simplified outline (SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current Ptot total power dissipation Tstg − −100 mA − 150 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Jun 01 2 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 833 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. UNIT IE = 0; VCB = −30 V − −100 nA IE = 0; VCB = −30 V; Tj = 150 °C − −5 µA IC = 0; VEB = −4 V − −100 nA ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain IC = −1 mA; VCE = −6 V; note 1 2PA1774Q 120 270 2PA1774R 180 390 2PA1774S 270 560 − −200 VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 Cc collector capacitance IE = ie = 0; VCB = −12 V; f = 1 MHz fT transition frequency IE = −2 mA; VCE = −12 V; f = 100 MHz; 100 note 1 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Jun 01 MAX. 3 − mV 2.2 pF − MHz Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 1999 Jun 01 REFERENCES IEC JEDEC EIAJ SC-75 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 01 5 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 NOTES 1999 Jun 01 6 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774 NOTES 1999 Jun 01 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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