IRIS-X6757 INTEGRATED SWITCHER Features • 7-pin SIP type full molded package, optimum IC for low-height SMPS. Package Outline • Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (100uA max) •Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. • Built-in constant voltage drive circuit • Built-in step drive circuit • Built-in low frequency PWM mode ( 22 kHz) • UVLO Burst Standby • Two operational modes by auto switching functions according to load TO-220 Fullpack (7 Lead) For middle~heavy load operation : QR mode For light~middle load operation : 1 Bottom Skip mode Key Specifications • Various kinds of protection functions Pulse-by-Pulse Overcurrent Protection (OCP) MOSFET RDS(ON) Overvoltage Protection with Latch mode (OVP) T ype VDSS(V) MAX AC input(V) Overload Protection with Latch mode (OLP) 230 15% The maximum limit of on-time IRIS-X6757 650 85 to 264 Pout(W) Note 1 300 180 Description IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Typical Connection Diagram Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to 140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that of the above. www.irf.com IRIS-X6757 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Terminals 1-3 Max. Ratings 18 Units A Maximum switching current *2 1-3 18 A Single pulse avalanche energy *3 1-3 326 mJ Input voltage for control part SS/OLP pin voltage 4-3 5-3 35 -0.5 ~ 6.0 V V IFB FB pin inflow current 6- 3 10 mA VFB FB pin voltage 6- 3 -0.5 ~ 9.0 V O.C.P/F.B pin voltage 7- 3 V Power dissipation of MOSFET *4 1-3 -1.5 ~ 5.0 44 2.8 Symbol Definition IDpeak Drain Current * 1 IDMAX EAS Vcc VSSOLP VOCPBD PD1 PD2 TF Top Tstg Tch Power dissipation for control part (MIC) *5 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature 4-3 0.8 - -20 ~ +125 - -20 ~ +125 -40 ~ +125 150 W W Note Single Pulse Ta=-20~+125 Single Pulse VDD=30V,L=50mH IL=3.53A within the limits of IFB With infinite heatsink Without heatsink Specified by Vcc x Icc Refer to recommended operating temperature *1 Refer to MOS FET A.S.O. curve *2 Maximum switching current The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET. *3 Refer to MOS FET Tch-EAS curve *4 Refer to MOS FET Ta-PD1 curve www.irf.com IRIS-X6757 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25 , Vin=20V,unless otherwise specified) Ratings Symbol Definition Terminals MIN TYP MAX Units Note Power Supply Start-up Operation VCC(ON) Operation Start Voltage 4-3 16.3 18.2 19.9 V Vcc=0 20V VCC(OFF) Operation Stop Voltage 4-3 8.8 9.7 10.6 V Vcc=20 8.8V ICC(ON) Circuit Current in Operation 4-3 - - 6 mA - ICC(OFF) Circuit Current in Non-Operation 4-3 - - 100 µA Vcc=15V Oscillation Frequency 1-2 19 22 25 kHz - VSSOLP(SS) Soft Start Operation Stop Voltage 5-3 1.1 1.2 1.4 V - ISSOLP(SS) Soft Start Operation Charging Current 5-3 -710 -550 -390 µA - fosc Normal Operation VOCPBD(BS1) Bottom-Skip Operation Threshold Voltage1 7-3 -0.72 -0.665 -0.605 V - VOCPBD(BS2) Bottom-Skip Operation Threshold Voltage2 7-3 -0.485 -0.435 -0.385 V - VOCPBD(LIM) Overcurrent Detection Threshold Voltage 7-3 -0.995 -0.94 -0.895 V - OCP/BD Pin Outflow Current 7-3 -250 -100 -40 µA - VOCPBD(TH1) Quasi-Resonant Operation Threshold Voltage 1 7-3 0.28 0.4 0.52 V - VOCPBD(TH2) Quasi-Resonant Operation Threshold Voltage 2 7-3 0.67 0.8 0.93 V - FB Pin Threshold Voltage 6-3 1.32 1.45 1.58 V - FB Pin Inflow Current (Normal Operation) 6-3 600 1000 1400 µA - IOCPBD VFB(OFF) IFB(ON) www.irf.com IRIS-X6757 Electrical Characteristics (for Control IC), Contd. Stand-by Operation VCC(S) Stand-by Operation Start Voltage 4-3 10.3 11.1 12.1 V Vcc=0 15V VCC(SK) Stand-by Operation Start Voltage Interval 4-3 1.1 1.35 1.65 V - ICC(S) Stand-by Non-Operation Circuit Current 4-3 - 20 56 µA Vcc=10.2V IFB(S) FB Pin Inflow Current (Stand-by) 6-3 - 4 14 µA Vcc=10.2V VFB(S) Stand-by Operation FB Pin Threshold Voltage 6-3 0.55 1.1 1.5 V Vcc=15V Minimum ON Time 1-2 0.65 1 1.35 µSec - Maximum ON Time 1-3 27.5 32.5 39 µSec - VSSOLP(OLP) OLP Operation Threshold Voltage 5-3 4 4.9 5.8 V - ISSOLP(OLP) OLP Operation Charging Current 5-3 -16 -11 -6 µA - OVP Operation Voltage 4-3 25.5 27.7 29.9 V Vcc=0→30V 4-3 -- 45 140 µA 4-3 6 7.2 8.5 V TON(MIN) Protection Operation TON(MAX) VCC(OVP) ICC(H) VCC(La.OFF) Latch Circuit Holding Current *5 Latch Circuit Release Voltage *5 Vcc=30→ VCC(OFF)-0.3V Vcc=30→6V *5 The latch circuit means a circuit operated O.V.P and O.L.P. *6 The current ratings are based on those of the IC , and plus(+) represents sink and minas(-) represents source. www.irf.com IRIS-X6757 Electrical characteristics for MOSFET (Ta=25 deg C) Ratings Symbol Definition Terminals VDSS Drain-to-Source breakdown voltage IDSS Note TYP MAX 1-2 650 - - V ID=300µA Drain leakage current 1-2 - - 300 µA VDS=650V RDS(ON) On-resistance 1-2 - - 0.62 tf Switching time 1-2 - - 500 nSec Thermal resistance - - - 1.09 /W ch-F IRIS-X6757 ID=3.4A Between channel and internal frame IRIS-X6757 MOSFET A.S.O. Curve A.S.O. temperature derating coefficient curve 100 100 Drain current limit by ON resistance 80 0.1ms 10 Drain Current ID[A] A.S.O. temperature derating coefficient[%] Units MIN 60 40 1ms 1 0.1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 20 0.01 0 0 20 40 60 80 100 Internal frame temperature TF [ 120 ] 1 10 100 1000 Drain-to-Source Voltage VDS[V] www.irf.com IRIS-X6757 100 80 60 40 20 0 25 50 75 100 Channel temperature Tch [ 125 ] 150 IRIS-X6757 MOSFET Ta-PD1 Curve 50 PD1=44[W] 45 With infinite heatsink 40 Power dissipation P D1[W] EAS temperature derating coefficient [%] IRIS-X6757 Avalanche energy derating curve 35 30 25 20 15 10 Without heatsink PD1=2.8[W] 5 0 0 20 40 60 80 100 Ambient temperature Ta[ 120 140 160 ] www.irf.com IRIS-W6753 IR IS -X 6 75 7 M IC T F -P D 2 C urve 0.9 0.8 Power dissipation P D2[W] 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 1 00 12 0 In tern al fram e tem p eratu re T F [ 14 0 1 60 ] IRIS-X6757 Transient thermal resistance curve Transient thermal resistance θch-c[ /W] 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m time t [sec] www.irf.com IRIS-X6757 Block Diagram VCC Reg& Iconst OVP Start Stop Burst R Delay Q Burst Control D DRIVE Reg Protection latch S S GND FB FB R Q S Q S R OSC MaxON OCP BSD BD OCP/BD Bottom Selector OLP Soft Start Counter SS/OLP Pin Designation Pin Assignments Pin No. Symbols Descriptions Functions 1 D Drain pin MOSFET drain 3 S/GND Source /Ground pin MOSFET Source / Ground 4 VCC Power supply pin Input of power supply for control circuit 5 SS/OLP Delay at Overload /Soft Start set up Pin Overload Protection and Soft Start Operation Time set up 6 FB Feedback pin Constant Voltage Control Signal Input, Burst(intermittent) mode Oscillation Control 7 OCP/BD Overcurrent Protection Input / Bottom Detection Pin Overcurrent Detection Signal Input /Bottom Detection Signal Input www.irf.com IRIS-X6757 Case Outline a Type Number W6753 b Lot Number 1st letter The last digit of year 2nd letter Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter Day Arabic Numerals Weight : Approx. 2.3g Dimensions in mm DWG.No. TG3A-2103 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com