Data SheetNo. PD60190-C IRIS4015(K) INTEGRATED SWITCHER Features • Primary current mode control, and secondary Packages voltage mode control • Vcc Over-voltage protection (latched) • Over-current & over-temperature protection • Quasi resonant, variable frequency operation • 5 pin TO-220 and TO-262 package • 0.97Ω Rds(on) max/ 650V MOSFET • Fully Characterized Avalanche Energy IRIS4015 5 Lead TO-220 IRIS4015K 5 Lead TO-262 Descriptions The IRIS4015(K) is a dual mode voltage and current controller combined with a MOSFET in a single package. The IRIS4015(K) is designed for use in AC/DC switching power supplies up to 230VAC nominal input, and is capable of 180W for a universal line input. The device operates on a quasi-resonant or Pulse Ratio Control (PRC) basis, and thereby variable frequency operation. Typical Connection Diagram Vin (AC/ DC) Vout (DC) 3 Drain Vcc 4 IRIS4015(K) FB Source 1 5 Gnd 2 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our DesignTips and Application Notes (AN1018a, AN1024a, AN1025) for proper circuit board layout. www.irf.com 1 IRIS4015(K) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note IDpeak Peak drain current 3-1 21 IDmax Maximum switching current 3-1 8 A V2-3 = 0.78V Ta=-20 - +125oC EAS Single pulse avalanche energy 3-1 325 mJ single pulse ILpeak=5.7A VCC Power supply voltage 4-3 35 VTH OCP/FB terminal voltage 5-2 6 P D1 Power dissipation for MOSFET 3-1 Single pulse V 235 1.2 P D2 Power dissipation for control part (MIC) 4-2 0.8 RthJC Thermal resistance, junction to case — 0.53 TJ Junction temperature — -40-125 TS Storage temperature — -40-125 Tf Internal frame temperature in operation — -20-125 TOP Ambient operating temperature — -20-125 TL Lead temp. (soldering, 10 seconds) — 300 With infinite heatsink W Without heatsink Specified by VIN x IIN °C/W °C Refer to recommended operating temperature Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the VOCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth(2) 2 VOCP/FB Tth(2) ≥1.0µs Vth(2) www.irf.com IRIS4015(K) Electrical Characteristics (for Control Part (MIC)) VCC = 18V, (TA = 25°C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VCC supply undervoltage positive going threshold 14.4 16 17.6 VCCHYS VCC supply undervoltage lockout hysteresis 5.4 6.0 6.6 IQCCUV UVLO mode quiescent current — — 100 µA Quiescent operating VCC supply current — — 30 mA Maximum OFF time 40 — 60 Minimum input pulse width for quasi resonant signals — — 1.0 Minimum OFF time — — 1.5 IQCC TOFF(MAX) TTH(2) TOFF(MIN) V µsec VTH(1) OCP/FB terminal threshold voltage 1 0.68 0.73 0.78 VTH(2) OCP/FB terminal threshold voltage 2 1.3 1.45 1.6 OCP/FB terminal sink current 1.1 1.35 1.7 VCC(OVP) VCC overvoltage protection limit 20.5 22.5 24.5 V IIN(H) Latch circuit sustaining current — — 400 µA Latch circuit reset voltage 6.6 — 8.4 V — oC IOCP/FB VIN(LaOFF) TJ(TSD) Thermal shutdown activation temperature 140 — VCC < VCCUV- V mA Electrical Characteristics (for MOSFET) (TA = 25°C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions VDSS Drain-to-source breakdown voltage 650 — — V IDSS Drain leakage current — — 25 µA Vds=650V, VGS=0V On-resistance — — 0.97 Ω V3-1=10V, ID=8.8A Rise time (10% to 90%) Thermal resistance — — — — 310 0.53 oC/W RDS(ON) tr THj-C www.irf.com ns Between junction and case 3 IRIS4015(K) Block Diagram 4 Vcc 1 START O.V.P D LATCH DRIVE REG. 2 OSCILLATOR T.S.D S Vth(1) + Comp.1 - 5 OCP/ FB Vth(2) + Comp.2 3 Ground Lead Assignments 1 2 3 4 Pin # S y m b o l Description 1 S 2 Ground 3 D MOSFET Drain terminal 4 Vcc Control circuit supply voltage 5 OCP/FB MOSFET Source terminal Ground terminal 5 Overcurrent detection, and Voltage mode control feedback signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit 4 5/4/2001 www.irf.com IRIS4015(K) Case outline 5-Lead TO-220 www.irf.com 01-6020 00 01-3042 01 (TS-001) 5 IRIS4015(K) Case outline 4.83 [.190] 4.06 [.160] 10.29 [.405] 9.65 [.380] 1.40 [.055] MAX. B 1.32 [.052] 1.22 [.048] 6.22[.245] MIN 6 9.65 [.380] 8.64 [.340] 6 8.00[.315] MAX 1 2 3 4 5 C 12.70 [.500] 14.73 [.580] 5X 1.01[.040] 0.51[.020] 5X 0.63 [.025] 0.31 [.012] 1.70 [.067] 4X 0.25 [.010] A B 2.92 [.115] 2.16 [.085] 5-Lead TO-262 IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 5/27/2002 6 www.irf.com