DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 May 28 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES PINNING • High DC current gain (min. 1000) PIN DESCRIPTION • High current (max. 1 A) 1 base • Low voltage (max. 80 V) 2 collector • Integrated diode and resistor. 3 emitter APPLICATIONS handbook, halfpage • Relay drivers. 2 1 1 2 DESCRIPTION 3 NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. 3 MAM307 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC875 − 60 V BC879 − 100 V BC875 − 45 V BC879 − 80 V collector-emitter voltage VBE = 0 VEBO emitter-base voltage − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 0.2 A open collector Ptot total power dissipation − 0.83 W Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 May 28 2 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 150 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER MIN. TYP. MAX. UNIT collector cut-off current BC875 VBE = 0; VCE = 45 V − − 50 nA BC879 VBE = 0; VCE = 80 V − − 50 nA IC = 0; VEB = 4 V − − 50 nA IEBO emitter cut-off current hFE DC current gain VCEsat CONDITIONS IC = 150 mA; VCE = 10 V; see Fig.2 1000 − − IC = 0.5 A; VCE = 10 V; see Fig.2 2000 − − − − 1.3 V − − 1.8 V collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA IC = 1 A; IB = 1 mA VBEsat base-emitter saturation voltage IC = 1 A; IB = 1 mA − − 2.2 V fT transition frequency IC = 0.5 A; VCE = 5 V; f = 100 MHz − 200 − MHz ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA − 500 − ns − 1300 − ns Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time 1999 May 28 3 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10−1 1 10 VCE = 10 V. Fig.2 DC current gain; typical values. 1999 May 28 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 May 28 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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