DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 emitter APPLICATIONS • General purpose • High gain amplification. 2 handbook, halfpage 1 2 3 DESCRIPTION 1 TR1 TR2 NPN Darlington transistor in a TO-92; SOT54 plastic package. 3 MAM252 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCES collector-emitter voltage VBE = 0 − 30 V IC collector current − 500 mA mW Ptot total power dissipation Tamb ≤ 25 °C − 625 hFE DC current gain IC = 10 mA; VCE = 5 V 10000 100000 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 125 − 1997 Jul 04 2 MHz Philips Semiconductors Product specification NPN Darlington transistor 2N6427 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCES collector-emitter voltage VBE = 0 − 30 V VEBO emitter-base voltage open collector − 10 V IC collector current (DC) − 500 mA ICM peak collector current − 800 mA IB base current (DC) − 200 mA − 625 mW Tamb ≤ 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT 200 K/W thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 30 V − 100 nA IE = 0; VCB = 30 V; Tj = 150 °C − 10 µA VBE = 0; IB = 0; VCE = 30 V − 100 nA − 100 nA IC = 10 mA 10000 100000 IC = 100 mA 20000 200000 IC = 500 mA 14000 140000 − 1.2 V ICES collector cut-off current IEBO emitter cut-off current IC = 0; VEB = 10 V hFE DC current gain VCE = 5 V; note 1 VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 0.5 mA; note 1 IC = 500 mA; IB = 0.5 mA; note 1 − 1.5 V VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA; note 1 − 2 V VBEon base-emitter on-state voltage IC = 50 mA; VCE = 5 V − 1.75 V fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 125 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1997 Jul 04 3 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Jul 04 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 04 5 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 NOTES 1997 Jul 04 6 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 NOTES 1997 Jul 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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