DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601AW NPN general purpose transistor Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW FEATURES PINNING • High collector current (max. 100 mA) PIN • Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage NPN transistor in an SC-70 (SOT323) plastic package. PNP complement: 2PB709AW. 3 1 MARKING MARKING CODE(1) TYPE NUMBER 2PD601AQW *6D 2PD601ARW *6E 2PD601ASW *6F 2 1 2 Top view Note Fig.1 1. * = -: made in Hong Kong. * = t: made in Malaysia. MAM062 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA Ptot total power dissipation − 200 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. 2002 Jun 26 2 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tj = 150 °C − 5 µA nA IEBO emitter-base cut-off current IC = 0; VEB = 5 V − 10 hFE DC current gain IC = 100 mA; VCE = 2 V; note 1 90 − DC current gain IC = 2 mA; VCE = 10 V 2PD601AQW 160 260 2PD601ARW 210 340 2PD601ASW 290 460 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 − 500 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 3.5 pF fT transition frequency IC = 2 mA; VCE = 10 V; f = 100 MHz 100 − MHz 2PD601ARW 120 − MHz 2PD601ASW 140 − MHz 2PD601AQW Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 Jun 26 3 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2002 Jun 26 REFERENCES IEC JEDEC EIAJ SC-70 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Jun 26 5 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW NOTES 2002 Jun 26 6 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW NOTES 2002 Jun 26 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jun 26 Document order number: 9397 750 09757