DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES PEMT1 PINNING • 300 mW total power dissipation PIN • Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 • Replaces two SC-75/SC-89 packaged transistors on same PCB area 6, 3 collector TR1; TR2 DESCRIPTION • Reduced required PCB area • Reduced pick and place costs. 6 APPLICATIONS 5 4 6 5 4 • General purpose switching and amplification. TR2 TR1 DESCRIPTION PNP transistor pair in a SOT666 plastic package. NPN complement: PEMX1. 1 2 1 3 Top view 2 3 MAM450 MARKING TYPE NUMBER MARKING CODE PEMT1 Fig.1 Simplified outline (SOT666) and symbol. FF LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − −50 VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 V Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 Philips Semiconductors Product specification PNP general purpose double transistor PEMT1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to ambient Rth j-a notes 1 and 2 VALUE UNIT 416 K/W Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCB = −30 V; IE = 0 − −100 nA VCB = −30 V; IE = 0; Tj = 150 °C − −10 µA VEB = −4 V; IC = 0 − −100 nA DC current gain VCE = −6 V; IC = −1 mA 120 − VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 − −200 mV Cc collector capacitance VCB = −12 V; IE = Ie = 0; f = 1 MHz − 2.2 pF fT transition frequency VCE = −12 V; IC = −2 mA; f = 100 MHz 100 − MHz ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. MHB987 400 handbook, halfpage hFE 300 200 100 0 −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V. Fig.2 DC current gain as a function of collector current; typical values. 2001 Nov 07 3 Philips Semiconductors Product specification PNP general purpose double transistor PEMT1 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Nov 07 EUROPEAN PROJECTION 4 Philips Semiconductors Product specification PNP general purpose double transistor PEMT1 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 07 5 Philips Semiconductors Product specification PNP general purpose double transistor NOTES 2001 Nov 07 6 PEMT1 Philips Semiconductors Product specification PNP general purpose double transistor NOTES 2001 Nov 07 7 PEMT1 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09051