BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 °C in a common source test circuit. Mode of operation f (MHz) CW 2000 Two-tone 2000 Gp ηD (W) (dB) 7 12.5 6 <2 PL IMD3 PL(1dB) (%) (dB) (W) 43 - 7 15.5 39 −32 - 15.8 - < −50 - Table 2. Typical class-A RF performance IDq = 200 mA; Th = 25 °C in a modified PHS test fixture. Mode of operation PHS f PL(AV) Gp ηD ACPR600k (MHz) (W) (dB) (%) (dBc) 1880 to 1920 2 16 20 −75 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Excellent back-off linearity n Typical PHS performance at a supply voltage of 26 V and IDq of 200 mA: u Average output power = 2 W u Power gain = 16 dB u Efficiency = 20 % u ACPR600k = −75 dBc n Easy power control n Excellent ruggedness n High power gain n Excellent thermal stability n Designed for broadband operation (HF to 2200 MHz) BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor n No internal matching for broadband operation n ESD protection 1.3 Applications n RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range n Broadcast drivers 2. Pinning information Table 3. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 2 3 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 4. Ordering information Type number BLF3G21-6 Package Name Description Version - ceramic surface-mounted package; 2 leads SOT538A 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 ±13 V ID drain current - 2.3 A Tstg storage temperature −65 +200 °C Tj junction temperature - 200 °C BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 2 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-c) [1] Conditions thermal resistance from junction to case Typ Unit Th = 25 °C; PL(AV) = 15 W [1] 10 K/W Thermal resistance is determined under specified RF operating conditions. 6. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.13 mA VGS(th) gate-source threshold voltage VDS = 10 V; ID = 13 mA 65 - - V 2.0 2.6 3.0 V - IDSS drain leakage current VGS = 0 V; VDS = 28 V - 1 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 1.85 2.3 - A IGSS gate leakage current VGS = ±15 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 0.5 A - 0.6 - RDS(on) drain-source on-state resistance VGS = VGS(th) + 9 V; ID = 0.5 A - 1.6 2.07 Ω Crs feedback capacitance 0.3 - pF Max Unit VGS = 0 V; VDS = 28 V; f = 1 MHz - S 7. Application information Table 8. Application information VDS = 26 V; Th = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; IDq = 90 mA Gp power gain PL(PEP) = 6 W 14 15.5 - dB RLin input return loss PL(PEP) = 6 W - −7 −3 dB ηD drain efficiency PL(PEP) = 6 W 35 39 - % IMD3 third order intermodulation distortion PL(PEP) = 6 W - −32 −29 dBc PL(PEP) < 2 W - < −50 - dBc Mode of operation: one-tone CW; f = 2000 MHz; IDq = 90 mA Gp power gain PL = PL(1dB) = 7 W - 12.5 - dB ηD drain efficiency PL = PL(1dB) = 7 W - 43 - % Mode of operation: PHS; f = 1900 MHz; IDq = 200 mA Gp power gain PL(AV) = 2 W - 16 - dB ηD drain efficiency PL(AV) = 2 W - 20 - % ACPR600k adjacent channel power ratio (600 kHz) PL(AV) = 2 W - −75 - dBc BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 3 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLF3G21-6 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power. 001aai224 15 001aai225 50 ηd (%) Gp (dB) 13 40 11 30 9 20 7 10 5 10−2 10−1 1 0 10−2 10 10−1 1 PL(CW) (W) VDS = 26 V; IDq = 90 mA; Th = 25 °C; f = 2000 MHz. Fig 1. Power gain as a function of CW load power; typical values 001aai226 18 Gp (dB) 16 10 PL(CW) (W) VDS = 26 V; IDq = 90 mA; Th = 25 °C; f = 2000 MHz. Fig 2. 60 ηD (%) 50 Drain efficiency as a function of CW load power; typical values 001aai227 0 IMD (dBc) −20 Gp 14 40 12 30 10 20 −40 IMD3 IMD5 −60 ηD 8 IMD7 10 6 10−1 0 10 1 −80 10−1 PL(PEP) (W) Two-tone power gain and drain efficiency as function of peak envelope load power; typical values VDS = 26 V; IDq = 90 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig 4. Two-tone intermodulation distortion as a function of peak envelope load power; typical values BLF3G21-6_1 Product data sheet 10 PL(PEP) (W) VDS = 26 V; IDq = 90 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig 3. 1 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 4 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 001aai228 −10 192 kHz channel BW ACPR (dB) −ACPR300k at 192 kHz BW 001aai229 25 C (pF) 20 +ACPR300k at 192 kHz BW −50 15 −ACPR900k at 192 kHz BW +ACPR900k at 192 kHz BW Ciss 10 −90 Coss 5 −ACPR600k at 192 kHz BW −130 −1 −0.5 +ACPR600k at 192 kHz BW Crss 0 0 0.5 ∆f (MHz) 1 0 10 20 30 40 VDS (V) VDS = 26 V; IDq = 200 mA; Th ≤ 25 °C; fc = 1900 MHz; PL(AV) = 2 W. Fig 5. ACPR performance under PHS conditions, measured in application board. Fig 6. 001aai230 10 Zi (Ω) 9 Ciss, Crss and Coss as function of drain supply voltage; typical values. 001aai231 11 ZL (Ω) XL 9 8 Xi 7 7 6 Ri 5 RL 5 4 1.8 1.85 1.9 1.95 3 1.8 2 f (GHz) Input impedance as a function of frequency (series components); typical values 1.95 2 VDS = 26 V; IDq = 90 mA; PL = 45 W; Th ≤ 25 °C. Fig 8. Load impedance as a function of frequency (series components); typical values BLF3G21-6_1 Product data sheet 1.9 f (GHz) VDS = 26 V; IDq = 90 mA; PL = 45 W; Th ≤ 25 °C. Fig 7. 1.85 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 5 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 8. Test information VGG VDD C17 C20 C21 C6 C7 L2 C16 C18 C19 L1 C12 C13 C14 R2 R1 output 50 Ω C1 L4 L3 L5 L7 L8 L6 L10 C11 L11 C15 output 50 Ω L9 C2 C3 C4 C5 C8 C9 C10 001aai232 Fig 9. Class-AB test circuit for 2 GHz BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 6 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor C17 C19 C18 C16 L2 C15 C14 C13 C12 R2 C20 C21 R1 C1 L1 C6 C7 C11 C3 C5 C2 C8 C4 C9 C10 54 mm 52 mm 001aai233 Dimensions in mm. The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 2.2); thickness = 0.51 mm. The other side is unetched and serves as a ground plane. See Table 9 for list of components. Fig 10. Component layout for 2 GHz class-AB test circuit BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 7 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor Table 9. List of components (see Figure 9 and Figure 10) Component Description Value [1] 6.8 pF C1, C2, C11 multilayer ceramic chip capacitor C4, C10 Tekelec variable capacitor; type 37281 C6 multilayer ceramic chip capacitor [1] 2.7 pF C7 multilayer ceramic chip capacitor [1] 2.0 pF C8 multilayer ceramic chip capacitor [1] 0.2 nF C9 Tekelec variable capacitor; type 37281 C12 multilayer ceramic chip capacitor [1] 10 pF C13 multilayer ceramic chip capacitor [1] 51 pF C14 multilayer ceramic chip capacitor [1] 120 pF C15 multilayer ceramic chip capacitor 100 nF C16 electrolytic capacitor 100 µF; 63 V C17, C18 tantalum SMD capacitor Remarks 0.4 pF to 2.5 pF 0.6 pF to 4.5 pF 10 µF; 35 V multilayer ceramic chip capacitor [2] 1 nF C20 multilayer ceramic chip capacitor [1] 22 pF C21 multilayer ceramic chip capacitor [1] 560 pF L1, L2 3 turns enamelled copper wire [3] D = 2 mm; d = 0.8 mm; length = 3 mm L3 stripline [3] 50 Ω (L × W) 3.5 mm × 1.5 mm stripline [3] 34.3 Ω (L × W) 1.0 mm × 1.5 mm stripline [3] 50 Ω (L × W) 11.0 mm × 0.8 mm L5 stripline [3] 34.3 Ω (L × W) 8.0 mm × 3.0 mm L6 stripline [3] 23.6 Ω (L × W) 1.5 mm × 1.0 mm stripline [3] 5.6 Ω (L × W) 14.4 mm × 3.0 mm stripline [3] 3.5 Ω (L × W) 3.5 mm × 1.5 mm [3] 31.9 Ω (L × W) 12.0 mm × 1.9 mm C19 L3 L4 L7, L8 L9 L10, L11 stripline R1 SMD resistor 470 Ω R2 SMD resistor 1 kΩ [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Rogers 5880 dielectric (εr = 2.2); thickness = 0.51 mm. BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 8 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Ceramic surface-mounted package; 2 leads SOT538A D A 3 z2 (4×) z4 (4×) D1 D2 B c 1 L A z1 (4×) E2 H E1 E z3 (4×) 2 α w1 M B M b Q 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 E E1 E2 H L Q w1 z1 z2 z3 z4 α mm 2.95 2.29 1.35 1.19 0.23 0.18 5.16 5.00 4.65 4.50 5.16 5.00 4.14 3.99 3.63 3.48 4.14 3.99 7.49 7.24 2.03 1.27 0.10 0.00 0.25 0.58 0.43 0.25 0.18 0.97 0.81 0.51 0.00 7° 0° inches 0.116 0.090 0.053 0.047 0.009 0.007 0.203 0.197 0.183 0.177 0.203 0.197 0.163 0.157 0.143 0.137 0.163 0.157 0.295 0.285 0.080 0.050 0.023 0.010 0.017 0.007 0.038 0.032 0.020 0.000 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC JEITA 0.004 0.010 0.000 EUROPEAN PROJECTION ISSUE DATE 02-08-20 06-03-16 SOT538A Fig 11. Package outline SOT538A BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 9 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CDMA Code Division Multiple Access EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor PHS Personal Handy-phone System RF Radio Frequency SMD Surface Mount Device UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF3G21-6_1 20080625 Product data sheet - - BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 10 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF3G21-6_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 June 2008 11 of 12 BLF3G21-6 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 June 2008 Document identifier: BLF3G21-6_1