BLF6G22LS-75 Power LDMOS transistor Rev. 01 — 8 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 2110 to 2170 28 17 18.7 30.5 −37.5[1] −41.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 690 mA: u Average output power = 17 W u Gain = 18.7 dB u Efficiency = 30.5 % u IMD3 = −37.5 dBc u ACPR = −41.5 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2000 MHz to 2200 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 Simplified outline Symbol 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G22LS-75 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 18 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 17 W 0.75 K/W BLF6G22LS-75_1 Preliminary data sheet Unit © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 2 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 100 mA 1.4 2 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 690 mA 1.75 2.16 2.75 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 14.9 18.7 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 5 A - 7.3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.5 A - 0.14 0.24 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 1.5 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Conditions Min Typ Max Unit Gp Symbol Parameter power gain PL(AV) = 17 W 17.6 18.7 - dB IRL input return loss PL(AV) = 17 W - −9.5 −6.5 dB ηD drain efficiency PL(AV) = 17 W 28 30.5 - % IMD3 third order intermodulation distortion PL(AV) = 17 W - −37.5 −34 dBc ACPR adjacent channel power ratio PL(AV) = 17 W - −41.5 −38.5 dBc 7.1 Ruggedness in class-AB operation The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz. BLF6G22LS-75_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 3 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 001aah586 20 Gp (dB) 70 ηD (%) Gp 19 55 18 40 ηD 17 25 16 0 20 40 60 80 10 100 PL (W) VDS = 28 V; IDq = 690 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah567 20 Gp (dB) 60 ηD (%) Gp IMD3 IMD (dBc) 45 −30 18 30 −45 17 15 −60 19 ηD 20 IMD5 IMD7 16 0 001aah568 −15 40 60 80 100 0 120 140 PL(PEP) (W) VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. −75 0 40 60 80 100 120 140 PL(PEP) (W) VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G22LS-75_1 Preliminary data sheet 20 © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 4 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 001aah569 20 001aah570 −25 60 IMD3 ηD (%) Gp (dB) 19 Gp IMD3, ACPR (dBc) 40 −35 20 −45 0 −55 ηD 18 17 0 10 20 30 40 PL(AV) (W) ACPR 0 VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz; f2 = 2145 MHz; carrier spacing 10 MHz. 10 20 30 40 PL(AV) (W) VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz; f2 = 2145 MHz; carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of average load power; typical values 8. Test information R1 VGG C22 VDD C5 C23 C6 C7 C10 C11 C12 C13 R2 C8 C14 C9 C4 C1 C21 INPUT C2 C3 C20 OUTPUT C15 C16 C17 C18 C19 001aah571 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G22LS-75_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 5 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor C22 C23 R1 C5 C10 C6 C7 C8 C9 R2 C11 C13 C12 C14 C4 C1 C20 C3 C21 C2 C17 C19 C16 C18 C15 001aah572 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. The drawing is not to scale. See Table 8 for list of components. Fig 7. Component layout Table 8. List of components (see Figure 6 and Figure 7) Component Description Value Remarks C1 multilayer ceramic chip capacitor 5.6 pF [1] C2, C3 multilayer ceramic chip capacitor 0.5 pF [1] C4 multilayer ceramic chip capacitor 0.6 pF [1] C5, C6, C13, C14, C18, C19 multilayer ceramic chip capacitor 1.5 µF C7, C8, C11, C16 TDK 1206 or capacitor of same quality multilayer ceramic chip capacitor 100 nF C9 multilayer ceramic chip capacitor 15 pF C10, C15 multilayer ceramic chip capacitor 220 nF Murata 0603 or capacitor of same quality [1] AVX 0805 or capacitor of same quality C12, C17 multilayer ceramic chip capacitor 10 pF [1] C20 multilayer ceramic chip capacitor 0.7 pF [1] C21 multilayer ceramic chip capacitor 20 pF [1] C22 tantalum capacitor 10 µF; 35 V C23 electrolytic capacitor 220 µF; 35 V R1 SMD resistor 3.3 Ω R2 SMD resistor 5.1 Ω [1] American Technical Ceramics type 100B or capacitor of same quality. BLF6G22LS-75_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 6 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 8. Package outline SOT502B BLF6G22LS-75_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 7 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G22LS-75_1 20080208 Preliminary data sheet - - BLF6G22LS-75_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 8 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF6G22LS-75_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 February 2008 9 of 10 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 February 2008 Document identifier: BLF6G22LS-75_1