Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated dual epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - SOT186A PIN SYMBOL PARAMETER BYQ28XRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time VRRM VF IO(AV) trr PIN CONFIGURATION MAX. MAX. MAX. UNIT 100 100 150 150 200 200 V 0.895 10 0.895 10 0.895 10 V A 25 25 25 ns SYMBOL DESCRIPTION case 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) a2 3 a1 1 k2 case isolated 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 IO(AV) Output current (both diodes conducting)2 IO(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature CONDITIONS MIN. - square wave δ = 0.5; Ths ≤ 92 ˚C sinusoidal a = 1.57; Ths ≤ 95 ˚C t = 25 µs; δ = 0.5; Ths ≤ 92 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms MAX. -100 100 100 100 -150 150 150 150 UNIT -200 200 200 200 V V V - 10 A - 9 A - 14 10 A A - 50 55 A A -40 - 12.5 150 150 A2s ˚C ˚C 1 Ths ≤ 148˚C for thermal stability. 2 Neglecting switching and reverse current losses August 1996 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.7 6.7 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.80 0.95 1.10 0.1 2 0.895 1.10 1.25 0.2 10 V V V mA µA MIN. TYP. MAX. UNIT THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) IF = 5 A; Tj = 150˚C IF = 5 A IF = 10 A VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs Reverse recovery charge (per diode) Reverse recovery time (per diode) Reverse recovery time (per diode) Forward recovery voltage (per diode) IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 4 9 nC IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 25 ns - 10 20 ns IF = 1 A; dIF/dt = 10 A/µs - 1 - V trr1 trr2 Vfr August 1996 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast I dI F BYQ28X series 0.5A F dt IF t 0A rr time Q I 10% s I rec = 0.25A IR 100% trr2 I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 8 F PF / W Ths(max) / C BYQ28 Vo = 0.748 V D = 1.0 Rs = 0.0293 Ohms 7 110.1 115.8 6 0.5 5 time 127.2 0.1 3 132.9 fr tp I 2 V 121.5 0.2 4 VF D= 1 0 time Fig.2. Definition of Vfr 0 1 2 3 4 IF(AV) / A 5 tp T 138.6 144.3 t T VF 104.4 6 150 8 7 Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. R 6 PF / W Ths(max) / C BYQ28 Vo = 0.748 V Rs = 0.0293 Ohms a = 1.57 5 115.8 121.5 1.9 D.U.T. 2.2 4 Voltage Pulse Source 4 3 Current shunt to ’scope Fig.3. Circuit schematic for trr2 132.9 2 138.6 1 144.3 0 August 1996 127.2 2.8 0 1 2 3 IF(AV) / A 4 5 150 6 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series trr / ns 1000 Qs / nC 100 IF=5A IF=2A IF=1A IF=5A 100 10 IF=1A 10 1 1.0 1 0.1 100 10 dIF/dt (A/us) Fig.7. Maximum trr at Tj = 25 ˚C; per diode 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Irrm / A 10 1.0 10 Zth j-hs (K/W) without heatsink compound with heatsink compound 1 1 IF=5A 0.1 IF=1A 0.1 PD tp t 0.01 10 -dIF/dt (A/us) 1 0.01 10us 100 Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode 15 1ms tp / s 0.1s 10s Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp). BYQ28 IF / A Tj=150C Tj=25C 10 5 max typ 0 0 0.5 VF / V 1 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj August 1996 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1996 5 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 6 Rev 1.000