Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES BYV74F series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab VF ≤ 1.12 V a2 3 a1 1 IO(AV) = 20 A k 2 GENERAL DESCRIPTION trr ≤ 60 ns PINNING Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. PIN The BYV74F series is supplied in the conventional leaded SOT199 package. SOT199 DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab isolated case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage IO(AV) Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. CONDITIONS MIN. BYV74F IFRM IFSM Tstg Tj Storage temperature Operating junction temperature Tmb ≤ 117˚C square wave; δ = 0.5; Ths ≤ 54 ˚C t = 25 µs; δ = 0.5; Ths ≤ 54 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - MAX. -300 300 300 300 -400 400 400 400 UNIT -500 500 500 500 V V V - 20 A - 30 A - 150 160 A A -40 - 150 150 ˚C ˚C ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 22 - pF 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74F series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink both diodes conducting with heatsink compound without heatsink compound per diode with heatsink compound without heatsink compound in free air. Rth j-a Thermal resistance junction to ambient MIN. TYP. MAX. UNIT - - 4.0 8.0 K/W K/W - 35 5.0 9.0 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.95 1.08 1.15 10 0.3 40 1.12 1.25 1.36 50 0.8 60 V V V µA mA nC - 50 60 ns - 4.2 5.2 A - 2.5 - V ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs September 1998 2 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast I dI F BYV74F series 20 F t I R 15 75 2.2 2.8 100% 10% s 4 10 100 5 rrm 0 125 0 5 150 15 10 IF(AV) / A Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.1. Definition of trr, Qs and Irrm I 50 a = 1.57 1.9 rr time I Ths(max) / C Vo = 0.89 Rs = 0.0137 dt Q BYV44 PF / W trr / ns 1000 F IF=20 A 100 1A time VF 10 V Tj = 25 C Tj = 100 C fr VF 1 1 Fig.2. Definition of Vfr 30 Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode Ths(max) / C BYV44 PF / W 100 10 dIF/dt (A/us) time 10 Irrm / A Vo = 0.8900 V Rs = 0.0137 Ohms 25 25 D = 1.0 IF= 20 A 0.5 20 0.2 15 1 50 IF=1A 75 0.1 10 I tp D= tp T Tj = 25 C Tj = 100 C 125 5 T 0 0.1 100 0 5 10 15 IF(AV) / A 20 t 0.01 150 25 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D. September 1998 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode. 3 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast 50 BYV74F series BYV74 IF / A 10 Transient thermal impedance, Zth j-hs (K/W) Tj = 25 C Tj = 150 C 40 1 30 typ 0.1 max 20 PD 0.01 tp D= 10 0 0 0.5 1 VF / V 1.5 0.001 1us 2 t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYV42F/EX Fig.9. Transient thermal impedance per diode Zth j-hs= f(tp) Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj 1000 T 10us tp T Qs / nC IF = 20 A 100 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C; per diode September 1998 4 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74F series MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.10. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74F series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.300