PHILIPS BUK7L06

BUK7L06-34ARC
N-channel TrenchPLUS standard level FET
Rev. 05 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include internal gate resistors and
TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Reduced component count due to
integrated gate resistor
„ Q101 compliant
1.3 Applications
„ 12 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
[1]
[2]
Min
Typ
Max
Unit
-
-
147
A
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
250
W
VGS = 10 V; ID = 30 A;
Tj = 25 °C; see Figure 13;
see Figure 14
-
5.1
6
mΩ
Static characteristics
RDSon
drain-source
on-state resistance
[1]
Current is limited by power dissipation chip rating.
[2]
Refer to document 9397 750 12572 for further information.
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
D
G
S
mbl521
1 2 3
SOT78C
(TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK7L06-34ARC TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-leads
BUK7L06-34ARC_5
Product data sheet
Version
SOT78C
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
2 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
[1]
VDGR
drain-gate voltage
RGS = 20 kΩ
[1]
VGS
gate-source voltage
ID
drain current
Min
Max
Unit
-
34
V
-
34
V
-20
20
V
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
[2][3]
-
147
A
Tmb = 100 °C; VGS = 10 V; see Figure 1
[4]
-
75
A
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
[4]
-
75
A
-
590
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
250
W
IDG(CL)
drain-gate clamping
current
pulsed; tp = 5 ms; δ = 0.01
-
50
mA
IGS(CL)
gate-source clamping
current
continuous
-
10
mA
-
50
mA
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
[2][3]
-
147
A
[4]
-
75
A
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
590
A
ID = 75 A; VDS ≤ 34 V; VGS = 10 V; RGS = 50 Ω;
unclamped; Tj(init) = 25 °C
-
1
J
HBM; C = 250 pF; R = 1.5 kΩ
-
8
kV
HBM; C = 100 pF; R = 1.5 kΩ
-
8
kV
pulsed; tp = 5 ms; δ = 0.01
Source-drain diode
IS
ISM
source current
Tmb = 25 °C
peak source current
Avalanche ruggedness
EDS(CL)S
non-repetitive
drain-source clamping
energy
Electrostatic discharge
Vesd
electrostatic discharge
voltage
[1]
Voltage is limited by clamping.
[2]
Current is limited by power dissipation chip rating.
[3]
Refer to document 9397 750 12572 for further information.
[4]
Continuous current is limited by package.
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
3 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03nj41
150
03na19
120
ID
(A)
Pder
(%)
80
100
(1)
50
40
0
0
0
50
100
150
Tmb (°C)
200
0
50
100
150
200
Tmb (°C)
(1) Capped at 75 A due to package.
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nj39
103
tp = 10 μ s
ID
(A)
Limit RDSon = VDS / ID
100 μ s
102
(1)
1 ms
DC
10 ms
100 ms
10
1
10-1
1
10
102
VDS (V)
(1) Capped at 75 A due to package.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
4 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
vertical in free air
-
60
-
K/W
Rth(j-mb)
thermal resistance from
see Figure 4
junction to mounting base
-
0.33
0.6
K/W
03nj40
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
δ=
P
10-2
tp
T
Single Shot
t
tp
T
10-3
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
5 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
drain-gate (Zener
diode) breakdown
voltage
ID = 2 mA; VGS = 0 V; Tj = 25 °C
34
-
45
V
ID = 2 mA; VGS = 0 V; Tj = -55 °C
34
-
45
V
VDS(CL)
drain-source clamping
voltage
IGS(CL) = -2 mA; ID = 1 A; Tj = 25 °C;
see Figure 10; see Figure 18
-
41
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
2.2
3
3.8
V
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 11; see Figure 12
1.5
-
-
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11; see Figure 12
1.2
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11; see Figure 12
-
-
4.2
V
VDS = 16 V; VGS = 0 V; Tj = 25 °C
-
0.1
2
µA
VDS = 16 V; VGS = 0 V; Tj = 150 °C
-
5
50
µA
VDS = 16 V; VGS = 0 V; Tj = 175 °C
-
30
250
µA
gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C;
voltage
Tj < 175 °C; see Figure 18; see Figure 19
20
22
-
V
IG = -1 mA; VDS = 0 V; Tj > -55 °C;
Tj < 175 °C; see Figure 18; see Figure 19
20
22
-
V
VDS = 0 V; VGS = 10 V; Tj = 25 °C
-
5
1000
nA
VDS = 0 V; VGS = -10 V; Tj = 25 °C
-
5
1000
nA
VDS = 0 V; VGS = 10 V; Tj = 175 °C
-
-
50
µA
VDS = 0 V; VGS = -10 V; Tj = 175 °C
-
-
50
µA
V(BR)DG
IDSS
V(BR)GSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 0 V; VGS = 16 V; Tj = 175 °C
-
-
150
µA
VGS = 10 V; ID = 30 A; Tj = 25 °C;
see Figure 13; see Figure 14
-
5.1
6
mΩ
VGS = 10 V; ID = 30 A; Tj = 175 °C;
see Figure 13; see Figure 14
-
-
11.4
mΩ
VGS = 16 V; ID = 30 A; Tj = 25 °C
-
4
5.3
mΩ
-
11
-
Ω
-
82
-
nC
-
15
-
nC
-
31
-
nC
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
ID = 25 A; VDS = 27 V; VGS = 10 V;
Tj = 25 °C; see Figure 16
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 17
BUK7L06-34ARC_5
Product data sheet
-
3400
4533
pF
-
1080
1296
pF
-
660
904
pF
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
6 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
turn-on delay time
-
27
-
ns
tr
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
108
-
ns
td(off)
turn-off delay time
-
196
-
ns
tf
fall time
-
167
-
ns
LD
internal drain
inductance
from drain lead 6 mm from package to
center of die; Tj = 25 °C
-
4.5
-
nH
from contact screw on mounting base to
center of die; Tj = 25 °C
-
3.5
-
nH
from source lead to source bond pad;
Tj = 25 °C
-
7.5
-
nH
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
-
62
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
-
44
-
nC
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
7 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03nj36
350
ID
20
(A)
10
300
9
03nj33
60
8
gfs
(S)
7.5
VGS (V) = 7
250
40
6.5
200
6
150
5.5
100
20
5
4.5
50
4
0
0
0
Fig 5.
2
4
6
8
Output characteristics: drain current as a
function of drain-source voltage; typical values
03nj34
100
0
10
VDS (V)
ID
(A)
Fig 6.
20
60
ID (A)
80
Forward transconductance as a function of
drain current; typical values
03nj57
42.0
Tj = 175 °C
VDSR(CL)
(V)
80
40
41.5
Tj = 25 °C
60
Tj = -55 °C
40
41.0
20
Tj = 175 °C
Tj = 25 °C
0
40.5
0
Fig 7.
2
4
VGS (V)
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
Fig 8.
4
6
8
ID (A)
10
Drain-source clamping voltage as a function of
drain current; typical values
BUK7L06-34ARC_5
Product data sheet
2
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
8 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03nj37
14
VGS (V) = 5
6
RDSon
(mΩ)
03nj56
43
VDSR(CL)
(V)
7
Tj = 175 °C
Tj = 25 °C
42
Tj = -55 °C
10
8
41
10
6
20
40
39
2
0
Fig 9.
100
200
300
ID (A)
Drain-source on-state resistance as a function
of drain current; typical values
03nh86
5
VGS(th)
(V)
0
400
max
1
2
3
-IGS(CL) (mA)
Fig 10. Drain-source clamping voltage as a function of
gate-source clamping current; typical values
03nh87
10-1
ID
(A)
10-2
4
typ
min
10-3
3
typ
max
min
2
10-4
1
10-5
0
-60
10-6
0
60
120
Tj (°C)
180
Fig 11. Gate-source threshold voltage as a function of
junction temperature
0
4
VGS (V)
6
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
BUK7L06-34ARC_5
Product data sheet
2
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
9 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03aa27
2
03nj35
12
a
RDSon
(mΩ)
1.5
9
1
6
0.5
3
0
-60
0
60
120
Tj (°C)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
03nj31
100
IS
(A)
5
180
10
15
20
Fig 14. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03nj32
10
VGS
(V)
80
8
60
6
VDD = 14 V
40
Tj = 175 °C
Tj = 25 °C
20
0
0.0
VGS (V)
VDD = 27 V
4
2
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (V)
Fig 15. Source current as a function of source-drain
voltage; typical values
0
40
60
80
100
QG (nC)
Fig 16. Gate-source voltage as a function of gate
charge; typical values
BUK7L06-34ARC_5
Product data sheet
20
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
10 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03nj38
6000
C
(pF)
003aab215
10-1
IG
(A)
Ciss
10-2
4000
Coss
10-3
Crss
2000
10-4
0
10-1
1
10
VDS (V)
10-5
102
20
22
24
26
28
30
32
V(BR)GSS (V)
Fig 18. Source-gate clamping current as a function of
source-gate clamping voltage; typical values
Fig 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aab216
1.03
a
1.02
1.01
1
0.99
0.98
-100
-50
0
50
100
150
200
Tj (°C)
Fig 19. Normalized source-gate clamping voltage as a function of junction temperature; typical values
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
11 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
SOT78C
E
A
p
A1
mounting
base
q
D1
q1
D
q2
L1
L
Q
b1
1
2
3
b
c
e
e1
H
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
e1
H
L
L1
p
Q
q
q1
q2
mm
4.58
4.31
1.33
1.21
0.87
0.76
1.33
1.21
0.44
0.33
15.07
14.80
6.47
6.22
10.40
10.00
2.64
2.44
5.16
5.00
6.03
5.76
14.00
13.50
6.10
5.58
3.90
3.78
2.72
2.40
2.95
2.69
3.80
3.42
12.40
12.00
Notes
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78C
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220
EUROPEAN
PROJECTION
ISSUE DATE
01-12-11
03-01-21
Fig 20. Package outline SOT78C (TO-220)
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
12 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7L06-34ARC_5
20090217
Product data sheet
-
BUK7L06-34ARC_4
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BUK7L06-34ARC_4
20051213
Product data sheet
-
BUK7L06_34ARC-03
BUK7L06_34ARC-03
(9397 750 12162)
20031203
Product data sheet
-
BUK7L06_34ARC-02
BUK7L06_34ARC-02
(9397 750 11471)
20030521
Product data sheet
-
BUK7L06_34ARC-01
BUK7L06_34ARC-01
(9397 750 11177)
20030414
Product data sheet
-
-
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
13 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK7L06-34ARC_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 17 February 2009
14 of 15
BUK7L06-34ARC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: Rev. 05 — 17 February 2009
Document identifier: BUK7L06-34ARC_5