PHX18NQ11T N-channel TrenchMOS™ standard level FET Rev. 01 — 13 February 2004 M3D308 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. 1.2 Features ■ Low on-state resistance ■ Isolated mounting base ■ Fast switching ■ Low thermal resistance 1.3 Applications ■ DC-to-DC converters ■ Switched-mode power supplies 1.4 Quick reference data ■ VDS ≤ 110 V ■ Ptot ≤ 31.2 W ■ ID ≤ 12.5 A ■ RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) mb mounting base; isolated Simplified outline Symbol d mb g MBB076 1 2 3 MBK110 SOT186A (TO-220F) s PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Type number PHX18NQ11T Package Name Description Version TO-220F Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220AB ‘full pack’ 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 110 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 110 V VGS gate-source voltage (DC) V - ±20 Th = 25 °C; VGS = 10 V; Figure 2 and 3 [1] - 12.5 A Th = 100 °C; VGS = 10 V Figure 2 [1] - 7.9 A peak drain current Th = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 [1] - 50.2 A Ptot total power dissipation Th = 25 °C; Figure 1 [1] - 31.2 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C drain current (DC) ID IDM Source-drain diode IS source (diode forward) current (DC) Th = 25 °C [1] - 12.5 A ISM peak source (diode forward) current Th = 25 °C; pulsed; tp ≤ 10 µs [1] - 50.2 A - 56 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] unclamped inductive load; ID = 7.5 A; tp = 0.09 ms; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C External heatsink connected to mounting base. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 2 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa13 120 03aa21 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 Th (°C) 150 P tot P der = ----------------------- × 100% P ° 0 50 100 150 200 Th (°C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of heatsink temperature. Fig 2. Normalized continuous drain current as a function of heatsink temperature. 03am62 102 Limit RDSon = VDS / ID ID (A) tp = 10 µ s 10 100 µ s DC 1 ms 1 10 ms 100 ms 10-1 1 102 10 103 VDS (V) Th = 25 °C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 3 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter thermal resistance from junction to heatsink Rth(j-h) [1] Conditions Min Typ Max Unit [1] Figure 4 - - 4 K/W External heatsink connected to mounting base. 5.1 Transient thermal impedance 03am61 10 Zth(j-h) (K/W) δ = 0.5 1 0.2 0.1 0.05 δ= P 0.02 tp T single pulse t tp T 10-1 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 4 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 110 - - V Tj = −55 °C 99 - - V Tj = 25 °C 2 3 4 V Tj = 150 °C 1.2 - - V Tj = −55 °C - - 4.4 V - - 1 µA Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 VDS = 100 V; VGS = 0 V Tj = 25 °C Tj = 150 °C - - 500 µA - 10 100 nA Tj = 25 °C - 67 90 mΩ Tj = 150 °C - 148 198 mΩ - 21 - nC - 2.5 - nC IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 9 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss ID = 3 A; VDD = 80 V; VGS = 10 V; Figure 13 - 8 - nC - 635 - pF output capacitance - 105 - pF Crss reverse transfer capacitance - 60 - pF VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 VDD = 50 V; RL = 15 Ω; VGS = 10 V; RG = 5.6 Ω td(on) turn-on delay time - 6 - ns tr rise time - 12 - ns td(off) turn-off delay time - 20 - ns tf fall time - 10 - ns - 0.87 1.2 V - 55 - ns - 135 - nC Source-drain diode VSD source-drain (diode forward) voltage IS = 12 A; VGS = 0 V; Figure 12 trr reverse recovery time Qr recovered charge IS = 12 A; dIS/dt = −100 A/µs; VGS = 0 V © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 5 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03am63 12 Tj = 25 °C 10 V 03am65 12 6V ID (A) ID (A) 5.4 V 8 8 5.2 V 5V 4 4 4.8 V 4.6 V 4.4 V Tj = 25 °C 150 °C 0 0 0 0.5 1 1.5 0 2 2 4 VDS (V) Tj = 25 °C Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03am64 VGS = 4.8 V RDSon (Ω) 6 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 0.2 VGS (V) 5V 5.2 V 5.4 V 03aa29 3 Tj = 25 °C a 0.15 2 0.1 6V 1 10 V 0.05 0 0 0 4 8 ID (A) 12 Tj = 25 °C -60 60 120 T (°C) 180 j R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data 0 Rev. 01 — 13 February 2004 6 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 03aa35 10-1 0 60 120 Tj (°C) 180 min 0 2 typ max 4 VGS (V) 6 Tj = 25 °C ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03am67 104 C (pF) 103 Ciss 102 Coss Crss 10 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 7 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03am66 12 03am68 10 VGS = 0 V ID = 3 A VGS (V) 8 IS (A) Tj = 25 °C 8 20 V VDD = 80 V 6 150 °C Tj = 25 °C 4 4 2 0 0 0 0.3 0.6 0.9 VSD (V) 1.2 0 Tj = 25 °C and 150 °C; VGS = 0 V 5 10 15 20 25 QG (nC) ID = 3 A; VDD = 20 V and 80 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 7. Isolation characteristics Table 6: Symbol Isolation characteristics Parameter V(isol)RMS RMS isolation voltage from all three terminals to external heatsink C(d-h) Conditions Min. Typ. Max. Unit f = 50-60 Hz; sinusoidal waveform; RH ≤ 65 %; clean and dust-free. - - 2500 V - 10 - pF Capacitance from drain to external heatsink © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 8 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION REFERENCES IEC SOT186A JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-03-12 02-04-09 Fig 14. SOT186A (TO-220F). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 9 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 9. Revision history Table 7: Revision history Rev Date 01 20040213 CPCN Description - Product data (9397 750 12915) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Product data Rev. 01 — 13 February 2004 10 of 12 PHX18NQ11T Philips Semiconductors N-channel TrenchMOS™ standard level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12915 Rev. 01 — 13 February 2004 11 of 12 Philips Semiconductors PHX18NQ11T N-channel TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 February 2004 Document order number: 9397 750 12915