PHILIPS PMLL5236B

DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
PMLL5225B to PMLL5267B
Voltage regulator diodes
Product specification
Supersedes data of November 1993
1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
PMLL5225B to PMLL5267B
FEATURES
DESCRIPTION
• Total power dissipation:
max. 500 mW
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The series consists of 43 types with nominal working
voltages from 3.0 to 75 V.
• Tolerance series: ±5%
• Working voltage range:
nom. 3.0 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
k
handbook, 4 columns
a
APPLICATIONS
MAM215
• Low-power voltage stabilizers or
voltage references.
The cathode is indicated by a yellow band.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−
250
UNIT
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
500
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
−
40
W
tp = 8.3 ms; square wave;
Tj ≤ 55 °C prior to surge
−
10
W
see Table
“Per type”
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−65
+200
°C
MIN.
MAX.
−
1.1
Note
1. If flanges are kept at Tflange ≤ 75 °C.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
1996 Apr 26
PARAMETER
forward voltage
CONDITIONS
IF = 200 mA; see Fig.4
2
UNIT
V
TEMP. COEFF.
SZ (%/K)
at IZ(2)
DIODE CAP. REVERSE CURRENT
TEST
Cd (pF)
at REVERSE
CURRENT
VOLTAGE
IZtest (mA) at f = 1 MHz;
at VR = 0 V
IR (µA)
V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
R
3
MAX.
MAX.
PMLL5225B
3.0
1600
−0.075
20
450
50
1.0
6.0
PMLL5226B
3.3
1600
−0.070
20
450
25
1.0
6.0
PMLL5227B
3.6
1700
−0.065
20
450
15
1.0
6.0
PMLL5228B
3.9
1900
−0.060
20
450
10
1.0
6.0
PMLL5229B
4.3
2000
±0.055
20
450
5
1.0
6.0
PMLL5230B
4.7
1900
±0.030
20
450
5
1.5
6.0
PMLL5231B
5.1
1600
±0.030
20
300
5
2.0
6.0
PMLL5232B
5.6
1600
+0.038
20
300
5
3.0
6.0
PMLL5233B
6.0
1600
+0.038
20
300
5
3.5
6.0
PMLL5234B
6.2
1000
+0.045
20
200
5
4.0
6.0
PMLL5235B
6.8
750
+0.050
20
200
3
5.0
6.0
PMLL5236B
7.5
500
+0.058
20
150
3
6.0
4.0
PMLL5237B
8.2
500
+0.062
20
150
3
6.5
4.0
PMLL5238B
8.7
600
+0.065
20
150
3
6.5
3.5
PMLL5239B
9.1
600
+0.068
20
150
3
7.0
3.0
600
+0.075
20
90
3
8.0
3.0
10
MAX.
MAX.
11
600
+0.076
20
85
2
8.4
2.5
PMLL5242B
12
600
+0.077
20
85
1
9.1
2.5
PMLL5243B
13
600
+0.079
9.5
80
0.5
9.9
2.5
PMLL5244B
14
600
+0.082
9.0
80
0.1
10.0
2.0
PMLL5245B
15
600
+0.082
8.5
75
0.1
11.0
2.0
PMLL5246B
16
600
+0.083
7.8
75
0.1
12.0
1.5
PMLL5247B
17
600
+0.084
7.4
75
0.1
13.0
1.5
PMLL5248B
18
600
+0.085
7.0
70
0.1
14.0
1.5
PMLL5249B
19
600
+0.086
6.6
70
0.1
14.0
1.5
PMLL5250B
20
600
+0.086
6.2
60
0.1
15.0
1.5
Product specification
PMLL5241B
PMLL5225B to PMLL5267B
NOM.
PMLL5240B
MAX.
(V)
Philips Semiconductors
TYPE No.
WORKING DIFFERENTIAL
VOLTAGE RESISTANCE
VZ (V)(1)
rdif (Ω)
at IZtest
at IZtest
Voltage regulator diodes
1996 Apr 26
Per type
Tj = 25 °C; unless otherwise specified.
DIODE CAP. REVERSE CURRENT
TEST
Cd (pF)
CURRENT
at REVERSE
IZtest (mA) at f = 1 MHz;
VOLTAGE
at VR = 0 V
IR (µA)
V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
R
NOM.
MAX.
MAX.
MAX.
MAX.
(V)
MAX.
4
22
600
+0.087
5.6
60
0.1
17.0
1.25
PMLL5252B
24
600
+0.088
5.2
55
0.1
18.0
1.25
PMLL5253B
25
600
+0.089
5.0
55
0.1
19.0
1.25
PMLL5254B
27
600
+0.090
4.6
50
0.1
21.0
1.0
PMLL5255B
28
600
+0.091
4.5
50
0.1
21.0
1.0
PMLL5256B
30
600
+0.091
4.2
50
0.1
23.0
1.0
PMLL5257B
33
700
+0.092
3.8
45
0.1
25.0
0.9
PMLL5258B
36
700
+0.093
3.4
45
0.1
27.0
0.8
PMLL5259B
39
800
+0.094
3.2
45
0.1
30.0
0.7
PMLL5260B
43
900
+0.095
3.0
40
0.1
33.0
0.6
PMLL5261B
47
1000
+0.095
2.7
40
0.1
36.0
0.5
PMLL5262B
51
1100
+0.096
2.5
40
0.1
39.0
0.4
PMLL5263B
56
1300
+0.096
2.2
40
0.1
43.0
0.3
PMLL5264B
60
1400
+0.097
2.1
40
0.1
46.0
0.3
PMLL5265B
62
1400
+0.097
2.0
35
0.1
47.0
0.3
PMLL5266B
68
1600
+0.097
1.8
35
0.1
52.0
0.25
PMLL5267B
75
1700
+0.098
1.7
35
0.1
56.0
0.2
Notes
1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.
2. For types PMLL5225B to PMLL5242B the IZ current is 7.5 mA; for PMLL5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C.
Product specification
PMLL5225B to PMLL5267B
PMLL5251B
Philips Semiconductors
TEMP. COEFF.
SZ (%/K)
at IZ(2)
Voltage regulator diodes
1996 Apr 26
TYPE No.
WORKING DIFFERENTIAL
VOLTAGE RESISTANCE
VZ (V)(1)
rdif (Ω)
at IZtest
at IZtest
Philips Semiconductors
Product specification
Voltage regulator diodes
PMLL5225B to PMLL5267B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point lead length 10 mm
300
K/W
Rth j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Apr 26
5
Philips Semiconductors
Product specification
Voltage regulator diodes
PMLL5225B to PMLL5267B
GRAPHICAL DATA
MBG930
103
handbook, full pagewidth
δ=1
Rth j-a
0.75
0.50
0.33
0.20
(K/W)
102
0.10
0.05
0.02
0.01
≤0.001
10
tp
δ=
T
1
10−1
1
102
10
103
104
tp
T
tp (ms)
105
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
MBG801
103
handbook, halfpage
MBG803
250
handbook, halfpage
PZSM
(W)
IF
(mA)
102
125
(1)
10
(2)
1
10−1
1
duration (ms)
0
0.5
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.3
1996 Apr 26
0.75
VF (V)
1.0
Tj = 25 °C.
Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.4
6
Forward current as a function of forward
voltage; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
PMLL5225B to PMLL5267B
PACKAGE OUTLINE
handbook, full pagewidth
1.60
O 1.45
0.3
0.3
3.7
3.3
MBA390 - 2
Dimensions in mm.
Fig.5 SOD80C.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 26
7