DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV55 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 21 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24 ±2% (BZV55-B) and approx. ±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. • Two tolerance series: ±2% and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. k handbook, 4 columns a MAM215 APPLICATIONS • Low-power voltage stabilizers or voltage references. The cathode is indicated by a yellow band. Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. − 250 UNIT IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge see Tables 1 and 2 Ptot total power dissipation Tamb ≤50 °C; note 1 − 400 mW tie-point ≤50 °C; note 1 − 500 mW PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 − 40 W Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. 1999 May 21 2 mA Philips Semiconductors Product specification Voltage regulator diodes BZV55 series ELECTRICAL CHARACTERISTICS Total BZV55-B and C series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER MAX. UNIT IF = 10 mA; see Fig.4 0.9 V BZV55-B/C2V4 VR = 1 V 50 µA BZV55-B/C2V7 VR = 1 V 20 µA BZV55-B/C3V0 VR = 1 V 10 µA BZV55-B/C3V3 VR = 1 V 5 µA BZV55-B/C3V6 VR = 1 V 5 µA BZV55-B/C3V9 VR = 1 V 3 µA BZV55-B/C4V3 VR = 1 V 3 µA BZV55-B/C4V7 VR = 2 V 3 µA BZV55-B/C5V1 VR = 2 V 2 µA BZV55-B/C5V6 VR = 2 V 1 µA BZV55-B/C6V2 VR = 4 V 3 µA BZV55-B/C6V8 VR = 4 V 2 µA BZV55-B/C7V5 VR = 5 V 1 µA BZV55-B/C8V2 VR = 5 V 700 nA BZV55-B/C9V1 VR = 6 V 500 nA BZV55-B/C10 VR = 7 V 200 nA BZV55-B/C11 VR = 8 V 100 nA BZV55-B/C12 VR = 8 V 100 nA BZV55-B/C13 VR = 8 V 100 nA BZV55-B/C15 to 75 VR = 0.7VZnom 50 nA VF forward voltage IR reverse current 1999 May 21 CONDITIONS 3 Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) MAX. DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. MAX. 4 MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. 2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5 22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25 24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25 Product specification MAX. BZV55 series MIN. Philips Semiconductors BZV55-B or C XXX DIFFERENTIAL RESISTANCE rdif (Ω) WORKING VOLTAGE VZ (V) at IZtest = 5 mA Voltage regulator diodes 1999 May 21 Table 1 Per type BZV55-B/C2V4 to B/C24 Tj = 25 °C unless otherwise specified. DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 5 Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. 27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9 36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 Philips Semiconductors BZV55-B or C XXX WORKING VOLTAGE VZ (V) at IZtest = 2 mA Voltage regulator diodes 1999 May 21 Table 2 Per type BZV55-B/C27 to B/C75 Tj = 25 °C unless otherwise specified. Product specification BZV55 series Philips Semiconductors Product specification Voltage regulator diodes BZV55 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient VALUE UNIT 300 K/W 380 K/W see Fig.2 and note 1 Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp δ= T 1 10−1 1 102 10 103 104 6 T tp (ms) Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 1999 May 21 tp 105 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Forward current as a function of forward voltage; typical values. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) −5 60 BZV55-B/C2V4 to B/C4V3. Tj = 25 to 150 °C. Fig.5 4 8 12 16 IZ (mA) 20 BZV55-B/C4V7 to B/C12. Tj = 25 to 150 °C. Temperature coefficient as a function of working current; typical values. 1999 May 21 0 Fig.6 7 Temperature coefficient as a function of working current; typical values. Philips Semiconductors Product specification Voltage regulator diodes BZV55 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; 2 connectors k SOD80C a (1) D L L H DIMENSIONS (mm are the original dimensions) 0 UNIT D H L mm 1.60 1.45 3.7 3.3 0.3 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD80C 100H01 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 21 8 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series NOTES 1999 May 21 9 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series NOTES 1999 May 21 10 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series NOTES 1999 May 21 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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